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March 2014
FCP11N60/FCPF11N60
General Description
Features
SuperFET® MOSFET is Fairchild Semiconductor’s first
genera-tion of high voltage super-junction (SJ) MOSFET
family that is utilizing charge balance technology for
outstanding low on-resistance and lower gate charge
performance. This technology is tailored to minimize
conduction loss, provide superior switch-ing performance,
dv/dt rate and higher avalanche energy. Con-sequently,
SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power,
FPD TV power, ATX power and industrial power
applications.
•
•
•
•
•
650V @T
= 150
°
C
Typ. Rds(on)=0.32
Ω
Ultra low gate charge (typ. Qg=40nC)
Low effective output capacitance (typ. Coss.eff=95pF)
100% avalanche tested
j
•
RoHS
C
ompliant
D
G
G
G
D
S
D
TO-220F
TO-220
S
S
Absolute Maximum Ratings
T =
25°C unless otherwise noted
C
Symbol
Parameter
FCP11N60
FCPF11N60
Units
A
I
– Continuous (T
= 25°C)
Drain Current
11
7
11*
7*
D
C
– Continuous (T
= 100°C)
A
C
I
(Note 1)
Drain Current
– Pulsed
33
33*
A
DM
V
E
I
Gate-Source Voltage
±
30
V
GSS
AS
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
340
11
mJ
A
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
12.5
4.5
mJ
V/ns
W
AR
dv/dt
P
Power Dissipation (T
= 25°C)
125
1.0
36
D
C
– Derate above 25°C
Operating and Storage
T
e
mperature Range
0.29
W/°C
°C
T , T
-55 to +150
J
STG
Maximum lead temperature for soldering purposes,
T
300
°C
L
1/8
”
from case for 5 seconds
* Drain current limited by maximum junction termperature
Thermal Characteristics
Symbol
Parameter
FCP11N60
1.0
FCPF11N60
Units
°C
/
W
°C
/
W
°C
/
W
R
R
R
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
3.5
—
θ
JC
0.5
θ
CS
θ
JA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
1
Package Marking and Ordering Information
Part Number
FCP11N60
Top Mark
FCP11N60
FCPF11N60
FCPF11N60T
Package
TO-220
Packing Method
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
50 units
50 units
Tube
Tube
Tube
FCPF11N60
FCPF11N60T
TO-220F
TO-220F
N/A
N/A
N/A
N/A
Electrical Characteristics
T =
25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
V
V
= 0
V
, I
=
2
50
µ
A, T
= 25°C
D J
600
—
—
—
—
V
V
GS
GS
BV
Drain-Source Breakdown Voltage
DSS
= 0 V, I
= 250
µ
A, T
= 150°C
650
D
J
∆
BV
Breakdown Voltage
T
e
mperature Coef-
ficient
DSS
I
= 250
µ
A, Referenced to 25°C
—
—
0.6
—
—
V/°C
V
D
/
∆
T
J
Drain-Source Avalanche Breakdown
Voltage
BV
I
V
= 0
V
, I
= 11 A
700
DS
GS
D
V
V
V
V
= 600
V
, V
= 0 V
—
—
—
—
—
—
—
—
1
µ
A
µ
A
nA
nA
DSS
DS
DS
GS
GS
GS
Zero Gate Voltage Drain Current
= 480
V
, T
=
1
25°C
10
C
I
I
= 30
V
, V
= 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
GSSF
DS
= -30
V
, V
= 0 V
GSSR
DS
On Characteristics
V
V
V
V
= V
, I
= 250
µ
A
Gate Threshold Voltage
3.0
—
—
5.0
0.38
—
V
Ω
S
GS(th)
DS
GS
DS
GS
D
R
Static Drain-Source
On-Resistance
DS(on)
= 10
V
, I
=
5
.5 A
0.32
9.7
D
g
= 40
V
, I
=
5
.5 A
(Note 4)
Forward Transconductance
—
FS
D
Dynamic Characteristics
C
C
C
Input Capacitance
—
—
—
1148 1490
pF
pF
pF
iss
V
= 25
V
, V
= 0 V,
GS
DS
Output Capacitance
671
63
870
82
oss
rss
f = 1.0 MHz
Reverse Transfer Capacitance
V
= 480
V
, V
= 0 V,
DS
GS
C
C
Output Capacitance
—
—
35
95
—
—
pF
pF
oss
oss
f = 1.0 MHz
eff.
V
= 0V to 480
V
, V
= 0 V
GS
Effective Output Capacitance
DS
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain Charge
—
—
—
—
—
—
—
34
98
80
205
250
120
52
ns
ns
d(on)
V
= 300
V
, I
= 11 A,
DD
D
r
R
= 25
Ω
G
119
56
ns
d(off)
f
(Note 4, 5)
(Note 4, 5)
ns
Q
Q
Q
40
nC
nC
nC
g
V
V
= 480
V
, I
= 11 A,
DS
GS
D
7.2
21
—
= 10 V
gs
gd
—
Drain-Source Diode Characteristics and Maximum Ratings
I
Maximum Continuous Drain-Source Diode Forward Current
—
—
—
—
—
—
—
11
33
1.4
—
A
A
S
I
Maximum Pulsed Drain-Source Diode Forward Current
SM
V
t
V
V
= 0
V
, I
= 11 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
—
V
SD
GS
GS
S
= 0
V
, I
= 11 A,
390
5.7
ns
µ
C
rr
S
dI /
dt = 100 A/
µ
s
(Note 4)
Q
Reverse Recovery Charge
—
F
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I
= 5.5A, V
= 50V, R
= 25
Ω,
Starting T =
25°C
AS
DD
G
J
3. I
≤
11A, di/dt
≤
200A/
µ
s, V
≤
BV
Starting T =
25°C
SD
DD
DSS,
J
4. Pulse Test : Pulse width
≤
300
µ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
2
Typical Characteristics
10
2
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10
1
10
1
10
0
Bottom :
5.5 V
150
o
C
25
o
C
-55
o
C
10
0
* Notes :
* Note
1. V
DS
= 40V
2. 250
µ
s Pulse Test
1. 250
µ
s Pulse Test
2. T
C
= 25
o
C
-1
10
-1
10
-1
10
10
0
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage
[V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
10
1
V
GS
= 10V
V
GS
= 20V
10
0
150
o
C
25
o
C
*
N
otes :
1. V
G
S
= 0V
2. 250
µ
s Pulse Test
* Note : T
J
= 25
o
C
-1
10
0
5
10
15
20
25
30
35
40
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage
[V]
Figure 3. On-Resistance Variation
vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
8
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
oss
= C
ds
+ C
gd
C
rss
= C
gd
V
DS
= 100V
V
DS
= 250V
C
5000
4000
3000
2000
1000
0
V
DS
= 400V
C
oss
6
* Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
4
iss
C
rss
2
* Note : I
D
= 11A
0
10
-1
10
0
10
1
0
5
10
15
20
25
30
35
40
45
Q
G
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate
Charge Characteristics
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
3
Typical Characteristics
(Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
*
N
otes :
1. V
G
S
= 0 V
2. I
D
= 250
µ
A
0.9
* Notes :
1. V
G
S
= 10 V
2. I
D
= 5.5 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C
]
T
J
, Junction Temperature [
o
C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
10
2
10
1
10
0
10
2
Operation in This Area
is Limited by R
D
S(on)
Operation in This Area
is Limited by R
D
S(on)
100 us
100 us
1
m
s
10
1
10
0
1
m
s
10 ms
10 ms
DC
100 ms
DC
*
N
otes :
*
N
otes :
-1
10
1. T
C
= 25
o
C
-1
10
1. T
C
= 25
o
C
2. T
J
= 150
o
C
2. T
J
= 150
o
3. Single Pulse
C
3. Single Pulse
-2
-2
10
10
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
V
DS
, Drain-Source Voltage [V]
V
D
S
,
D
rain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area
for FCP11N60
Figure 9-2. Maximum Safe Operating Area
for FCPF11N60
12.5
10.0
7.5
5.0
2.5
0.0
25
50
75
100
125
150
T
C
, Case Temperature [
o
C]
Figure 10. Maximum Drain Current
vs. Case
Temperature
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
4
Typical Characteristics
(Continued)
10
0
D
=
0.5
0.2
*
N
o
tes
1.
J
C
(
t)
2. D
uty F
actor, D
=t
1
/t
2
:
Z
=
1.0
o
C /W
M
a
x.
0.1
10
-1
θ
0.05
3. T
J
M
–
T
C
=
P
D M
* Z
J
C
(
t)
θ
0.02
0.01
P
DM
t
1
t
2
single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S
q
uare W
ave P
ulse D
uration [sec]
Figure 11-1. Transient Thermal Response Curve for FCP11N60
D=0
.
5
10
0
0.2
0.1
*
N
o
tes
1.
J
C
(
t)
2. D
uty Factor, D
=t
1
/t
2
:
Z
=
3.5
o
C /W
M ax.
θ
0.05
3. T
J
M
–
T
C
=
P
D M
* Z
J
C
(
t)
θ
10
-1
0.02
0.01
P
DM
t
1
t
2
single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
,
S
quare W
ave Pu
l
s
e Duration [sec]
Figure 11-2. Transient Thermal Response Curve for FCPF11N60
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
5
Figure 12. Gate Charge Test Circuit & Waveform
V
GS
Same Type
50K
Ω
as DUT
Q
g
12V
200nF
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Figure 13.
Resistive Switching Test Circuit & Waveforms
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 14.
Unclamped Inductive Switching Test Circuit & Waveforms
BV
DSS
——————–
BV
DSS
– V
DD
L
1
2
2
—-
E
AS
=
L I
AS
V
DS
I
D
BV
DSS
I
AS
R
G
V
DD
I
D
(t)
V
DD
V
DS
(t)
DUT
10V
t
p
t
p
Time
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
6
Figure 15.
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
©2008 Fairchild Semiconductor Corporation
FCP11N60/FCPF11N60 Rev. C0
7
SUPPLIER “B” PACKAGE
SHAPE
ꢀꢁꢂꢂ
3.50
10.67
9.65
SUPPLIER “A” PACKAGE
SHAPE
E
3.40
2.50
16.30
13.90
IF PRESENT, SEE NOTE “D”
E
16.51
15.42
9.40
8.13
E
1
2
3
4.10
2.70
[2.46]
C
14.04
12.70
2.13
2.06
FRONT VIEWS
H
4.70
4.00
1.62
1.42
1.62
1.10
2.67
2.40
“A1”
8.65
7.59
1.00
0.55
SEE NOTE “F”
ꢃ
ꢄ
ꢃ
ꢄ
6.69
6.06
OPTIONAL
CHAMFER
E
14.30
11.50
NOTE “I”
BOTTOM VIEW
NOTES:
A) REFERENCE
JEDEC, TO-220, VARIATION AB
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS
COMMON TO ALL PACKAGE
SUPPLIERS EXCEPT WHERE NOTED [
].
D) LOCATION
OF MOLDED FEATURE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE)
3
2
1
E DOES
NOT COMPLY JEDEC STANDARD VALUE.
F) “A1” DIMENSIONS AS BELOW:
SINGLE GAUGE = 0.51 – 0.61
DUAL GAUGE
= 1.10 – 1.45
G) DRAWING
FILE NAME: TO220B03REV9
H
PRESENCE IS SUPPLIER DEPENDENT
I) SUPPLIER
DEPENDENT MOLD LOCKING HOLES
IN HEATSINK.
0.60
0.36
2.85
2.10
BACK VIEW
SIDE VIEW
10.36
9.96
2.66
2.42
B
A
B
3.28
3.08
7.00
3.40
3.20
0.70
SEE NOTE “F”
SEE NOTE “F”
6.88
6.48
1 X
4
5°
16.07
15.67
B
16.00
15.60
B
(3.23)
3
1
1.47
1.24
2.96
2.56
2.14
0.90
0.70
0.50
10.05
9.45
M
A
30°
0.45
0.25
0.60
0.45
B
2.54
2.54
4.90
4.50
B
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B
DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 – WITH SUPPORT PIN HOLE.
OPTION 2 – NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
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Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
©
Semiconductor Components Industries, LLC
