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” or its affiliates and/or
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. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
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does not convey any license under any of its intellectual property rights nor the rights of others.
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products are not designed, intended, or authorized
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d
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MOSFET
– N-Channel,
SUPERFET
)
II, FRFET
)
650
V
,
1
0.2 A, 380 m
W
FCPF380N65FL1-F154
Description
SUPERFET II MOSFET is ON Semiconductor’s brand
−
new high
voltage super
−
junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on
−
resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET II MOSFET
is very suitable for the various power system for miniaturization and
higher efficiency. SUPERFET II FRFET MOSFET’s optimized
reverse recovery performance of body diode can remove additional
component and improve system reliability.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
380 m
ꢀ
@ 10 V
10.2 A
D
G
Features
•
700 V @ T
= 150
°
C
J
•
R
= 320 m
ꢀ
(Typ.)
•
Ultra Low Gate Charge (Typ. Q
= 33 nC)
DS(on)
S
g
MOSFET
•
Low Effective Output Capacitance (Typ. C
•
100% Avalanche Tested
•
These Devices are Pb
−
Free and are RoHS Compliant
= 165 pF)
oss(eff.)
Applications
G
D
•
Computing / Display Power Supplies
•
Telecom / Server Power Supplies
•
Industrial Power Supplies
S
TO
−
220F Ultra Narrow Lead
CASE 221BN
•
Lighting / Charger / Adapter
MARKING DIAGRAM
$Y&Z&3&K
FCPF
380N65F
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (
Y
e
ar & Week)
= Lot
FCPF380N65F
= Specific Device Code
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
FCPF380N65FL1
−
F154/D
December, 2020
−
Rev. 0
FCPF380N65FL1
−
F154
ABSOLUTE MAXIMUM RATINGS
(T =
25
°
C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
−
DC
20
V
−
AC (f > 1 Hz)
30
I
D
Drain Current
−
Continuous (T
= 25
°
C)
10.2
6.4
A
C
−
Continuous (T
= 100
°
C)
C
I
Drain Current
30.6
212
A
mJ
A
DM
E
MOSFET dv/dt
AS
AS
I
2.3
E
0.33
100
mJ
V/ns
AR
dv/dt
Power Dissipation
50
P
(T =
25
°
C)
33
W
W/
°
C
°
C
D
C
−
Derate Above 25
°
C
0.26
−
55 to +150
300
T , T
Operating and Storage
T
e
mperature Range
J
STG
T
Maximum Lead
T
e
mperature for Soldering, 1/8
″
from Case for 5 Seconds
°
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive
rating: pulse width limited by maximum junction temperature.
2. I
= 2.3 A, R
= 25
ꢀ
, starting T
= 25
°
C.
AS
G
J
3. I
≤
5.1 A, di/dt
≤
200 A/
ꢁ
s, V
≤
380
V
,
s
tarting T
= 25
°
C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
3.8
Unit
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_
C/W
_
C/W
ꢂ
JC
JA
R
62.5
ꢂ
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
50 Units / Tube
FCPF380N65FL1
−
F154
FCPF380N65F
TO
−
220F
(Pb
−
Free)
2
FCPF380N65FL1
−
F154
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
V
I
= 0
V
, I
=
1
0 mA, T
= 25
_
C
DSS
GS
D
J
= 0
V
, I
=
1
0 mA, T
= 150
_
C
GS
D
J
ꢃ
B
V
/
ꢃ
T
Breakdown Voltage
T
e
mperature
Coefficient
= 10 mA, Referenced to 25
_
C
0.72
V/
_
C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
V
V
= 650
V
, V
= 0 V
−
−
−
−
40
−
10
−
ꢁ
A
ꢁ
A
V
DSS
DS
DS
GS
GS
= 520
V
, V
= 0 V, T
=
1
25
_
C
GS
C
I
Gate to Source Leakage Current
=
20
V
, V
= 0 V
100
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V
, I
= 1 mA
3
−
−
−
5
380
−
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10
V
, I
=
5
.1 A
320
9.9
m
ꢀ
D
g
= 20
V
, I
=
5
.1 A
S
FS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 100
V
, V
= 0 V, f = 1
M
Hz
−
−
−
−
−
−
−
−
−
1265
42
1680
55
−
pF
pF
pF
pF
pF
nC
nC
nC
ꢀ
iss
DS
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Output Capacitance
1.0
25
rss
C
V
DS
V
DS
V
DS
= 380
V
, V
= 0 V, f = 1
M
Hz
−
oss
GS
C
Effective Output Capacitance
T
o
tal Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
= 0 V to 400 V, V
= 0 V
165
33
−
oss(eff.)
GS
Q
= 380
V
, I
= 5.1 A, V
= 10 V
43
−
g(tot)
D
GS
Q
6.6
14
gs
gd
Q
−
ESR
f = 1 MHz
0.46
−
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 380
V
, I
=
5
.1 A, V
= 10
V
,
−
−
−
−
18
7.8
45
8
46
25.6
100
26
ns
ns
ns
ns
d(on)
DD
g
D
GS
R =
4.7
ꢀ
t
r
t
d(off)
t
f
SOURCE
−
DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
−
10.2
30.6
1.2
−
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0
V
, I
= 5.1
A
−
V
GS
SD
t
rr
= 400
V, I
= 5.1
A,
84
224
ns
nC
DD
SD
dI /dt
= 100 A/
ꢁ
s
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially
independent of operating temperature.
3
FCPF380N65FL1
−
F154
TYPICAL PERFORMANCE CHARACTERISTICS
30
30
10
V
= 20 V
V
GS
=
1
5.0 V
10.0 V
8.0 V
7.0 V
6.0 V
DS
250
ꢁ
s Pulse
T
e
st
10
5.5 V
5.0 V
150
°
C
25
°
C
−
55
°
C
250
ꢁ
s Pulse
T
e
st
= 25
°
C
T
C
1
1
0.1
1
10
20
4
5
6
7
V
DS
, Drain
−
Source Voltage (V)
V
GS
, Gate
−
Source Voltage (V)
Figure 1. On
−
Region Characteristics
Figure 2. Transfer Characteristics
0.6
0.4
100
10
1
V
= 0 V
T
C
= 25
°
C
GS
250
ꢁ
s Pulse
T
e
st
V
= 10 V
= 20 V
GS
150
°
C
25
°
C
V
GS
0.1
0.2
0.0
0.01
0.001
0
6
12
18
24
30
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
, Body Diode Forward Voltage (V)
I ,
Drain Current (A)
V
SD
D
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 3. On
−
Resistance Variation vs.
Drain Current and Gate Voltage
10
10000
V
V
V
= 130 V
= 325 V
= 520 V
DS
DS
DS
C
iss
8
6
4
2
0
1000
100
10
C
oss
C
rss
V
= 0 V
GS
f = 1 MHz
1
C
C
C
= C
+ C
(C =
shorted)
iss
gs gd
ds
= C
+ C
gd
oss
rss
ds
= C
gd
I
D
= 5.1 A
32 40
0.1
0
8
16
24
0.1
1
10
100
700
Q ,
T
o
tal Gate Charge (nC)
g
V
DS
, Drain
−
Source Voltage (V)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
FCPF380N65FL1
−
F154
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)
2.4
1.2
1.1
V
= 0 V
= 1 mA
V
= 10 V
GS
GS
I
D
I =
5.1 A
D
2.0
1.6
1.0
0.9
0.8
1.2
0.8
0.4
−
75
−
50
−
25
25 50 75
100 125 150
−
75
−
50
−
25
25 50 75
100 125 150
0
0
T , Junction
T
e
mperature (
°
C)
J
T , Junction
T
e
mperature (
°
C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On
−
Resistance Variation
vs. Temperature
100
12
R
= 3.8
°
C/W
ꢂ
JC
10
ꢁ
s
10
9
6
3
0
100
ꢁ
s
1 ms
1
Operation in this Area
10 ms
DC
is Limited by R
DS(on)
0.1
T
= 25
°
C
T =
150
°
C
Single Pulse
C
J
0.01
150
0.1
1
10
100
1000
25
50
75
100
125
V
DS
, Drain
−
Source Voltage (V)
T ,
Case
T
e
mperature (
°
C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
8
6
4
2
0
0
130
260
390
520
650
V
DS
, Drain to Source Voltage (V)
Figure 11. E
OSS
vs. Drain to Source Voltage
5
FCPF380N65FL1
−
F154
TYPICAL PERFORMANCE CHARACTERISTICS
(continued)
5
1
0.5
0.2
0.1
0.05
0.02
P
DM
0.1
0.01
t
1
0.01
t
2
Z
ꢂ
(t) = 3.8
°
C/W Max.
JC
Duty Factor, D = t
/ t
1
2
Single Pulse
1
0
−
4
T
JM
−
T =
P
x Z
(t)
ꢂ
DM JC
C
0.001
1
0
−
5
1
0
−
3
1
0
−
2
1
0
−
1
1
10
100
Rectangular Pulse Duration (s)
Figure 12. Transient Thermal Response Curve
6
FCPF380N65FL1
−
F154
V
GS
R
Q
g
L
V
DS
Q
Q
gd
gs
V
GS
DUT
I
G
= const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
E
AS
+
LI
AS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I
D
(t)
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
7
FCPF380N65FL1
−
F154
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
•
dv/dt controlled by R
G
•
I controlled
by pulse period
SD
Gate Pulse Width
D
+
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
8
FCPF380N65FL1
−
F154
PACKAGE DIMENSIONS
TO
−
220 FULLPACK, 3
−
LEAD
CASE 221BN
ISSUE O
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
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