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March 2015
FCD3400N80Z / FCU3400N80Z
®
N-Channel SuperFET
II MOSFET
800 V, 2 A, 3.4
Ω
Features
Description
•
•
•
•
•
•
•
R
DS(on)
= 2.75
Ω (
Typ.)
SuperFET
®
II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET II MOSFET is very suitable for the switching
power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
Ultra Low Gate Charge (Typ. Q
g
= 7.4 nC)
Low E
oss
(Typ. 0.9 uJ @ 400V)
Low Effective Output Capacitance (Typ. C
oss(eff.)
= 41 pF)
100% Avalanche
T
e
sted
RoHS Compliant
ESD Improved Capability
Applications
•
•
AC – DC Power Supply
LED Lighting
D
D
G
S
G
G
D-PAK
D
S
I-PAK
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
FCD3400N80Z
FCU3400N80Z
Symbol
V
DSS
Parameter
Unit
Drain to Source Voltage
Gate to Source Voltage
800
±20
V
– DC
V
GSS
I
D
V
A
– AC
(f > 1 Hz)
±30
– Continuous (T
C
= 25
o
C)
– Continuous (T
C
= 100
o
C)
– Pulsed
2.0
Drain Current
1.2
I
DM
E
AS
I
AR
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
4.0
A
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
12.8
0.4
E
AR
Repetitive Avalanche Energy
MOSFET dv/dt
0.32
100
mJ
dv/dt
P
D
V/ns
Peak Diode Recovery dv/dt
(Note 3)
20
(T
C
= 25
o
C)
– Derate Above 25
o
C
32
W
W/
o
C
o
C
Power Dissipation
0.26
-55 to +150
300
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
Maximum Lead
T
e
mperature for Soldering, 1/8” from Case for 5 Seconds
o
C
Thermal Characteristics
FCD3400N80Z
FCU3400N80Z
Symbol
Parameter
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
3.9
o
C/W
62.5
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
1
Package Marking and Ordering Information
Part Number
FCD3400N80Z
FCU3400N80Z
Top Mark
Package
DPAK
Packing Method
T
a
pe and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
75 units
FCD340080Z
FCU340080Z
IPAK
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
V
GS
= 0
V
,
I
D
= 1 mA, T
J
= 25
°
C
D
= 1 mA, Referenced to 25
o
C
DS
= 800 V, V
GS
= 0 V
800
–
–
–
–
V
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
0.9
V/
o
C
V
–
–
–
–
–
–
25
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μ
A
μ
A
V
DS
= 640 V, V
GS
= 0
V
,
T
C
= 125
o
C
250
±10
V
GS
= ±20 V, V
DS
= 0 V
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 0.2 mA
V
GS
= 10
V
,
I
D
= 1 A
V
DS
= 20
V
,
I
D
= 1 A
2.5
–
2.75
2
4.5
3.4
–
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
–
–
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
–
299
12.7
0.36
6.2
400
pF
pF
pF
pF
pF
nC
nC
nC
Ω
V
DS
= 100 V, V
GS
= 0
V
,
f = 1 MHz
C
oss
C
rss
Output Capacitance
15
Reverse Transfer Capacitance
Output Capacitance
–
C
oss
C
oss(eff.)
Q
g(tot)
Q
gs
V
DS
= 480
V
, V
GS
= 0 V, f = 1 MHz
V
DS
= 0 V to 480 V, V
GS
= 0 V
–
Effective Output Capacitance
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
41
–
7.4
9.6
V
V
DS
= 640 V, I
D
= 2 A,
GS
= 10 V
1.6
–
–
–
(Note 4)
Q
gd
3.1
ESR
f = 1 MHz
3.2
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
10
6.4
22.7
14
30
23
55
38
ns
ns
ns
ns
V
DD
= 400
V
,
I
D
= 2 A,
V
GS
= 10 V, R
g
= 4.7
Ω
(Note 4)
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
V
GS
= 0 V, I
SD
= 2 A
–
–
–
–
–
–
–
1.6
3.8
1.2
–
A
A
I
SM
V
SD
t
rr
–
V
Reverse Recovery Time
119
868
ns
nC
V
GS
= 0 V, I
SD
= 2 A,
dI
F
/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
–
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. I
= 0.4 A, R
= 25
Ω
, starting T
= 25
°
C
AS
G
J
3. I
≤
2 A, di/dt
≤
200 A/
μ
s, V
≤
BV
, starting T
= 25
°
C
J
SD
DD
DSS
4. Essentially independent of operating temperature typical characteristic.
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
5
10
V
GS
=
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
150
o
C
25
o
C
1
1
-55
o
C
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
*Notes:
1. V
DS
= 20V
2. 250
μ
s Pulse Test
0.3
0.1
1
10
V
DS
, Drain-Source Voltage[V]
20
3
4
5
6
7
V
GS
, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
10
6
5
4
3
2
1
*Note: T
C
= 25
o
C
150
o
C
1
25
o
C
V
GS
= 10V
0.1
V
GS
= 20V
*Notes:
1. V
GS
= 0V
2. 250
μ
s Pulse Test
0.01
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
V
SD
, Body Diode Forward Voltage [V]
I
D
, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10000
10
C
C
C
= C
+ C
(C =
shorted)
gs gd
ds
iss
= C
+ C
ds gd
oss
rss
V
DS
= 160V
= C
gd
1000
100
10
V
DS
= 400V
8
V
DS
= 640V
C
iss
6
C
oss
4
2
C
rss
1
*Note:
1. V
GS
= 0V
2. f = 1MHz
*Note: I
D
= 2A
0.1
0
0.1
1
10
100
1000
0
2
4
6
8
V
DS
, Drain-Source Voltage [V]
Q
g
, Total Gate Charge [nC]
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
*Notes:
1. V
GS
= 10V
*Notes:
1. V
GS
= 0V
2.5
2. I
D
= 1A
2. I
D
= 1mA
1.1
2.0
1.5
1.0
0.5
0.0
1.0
0.9
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [
o
C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
2.0
1.5
1.0
0.5
0.0
10
μ
s
100
μ
s
1
1ms
DC
Operation in This Area
is Limited by R
DS(on)
0.1
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
0.01
1
10
100
1000
25
50
75
100
125
150
T
C
, Case Temperature [
o
C]
V
DS
, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
2.5
2.0
1.5
1.0
0.5
0
0
200
400
600
800
V
DS
, Drain to Source Voltage [V]
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
4
Typical Performance Characteristics
(Continued)
Figure 12. Transient Thermal Response Curve
5
1
0.5
0.2
P
DM
0.1
t
1
0.05
t
2
*Notes:
0.02
0.01
1. Z
θ
JC
(t) = 3.9
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
0.1
Single pulse
0.04
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, Rectangular Pulse Duration [sec]
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
5
I
= const.
G
Fig 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Fig 14. Resistive Switching Test Circuit & Waveforms
V
GS
Fig 15. Unclamped Inductive Switching Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
6
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Fig 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2015 Fairchild Semiconductor Corporation
FCD3400N80Z / FCU3400N80Z Rev. 1.0
7
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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