onsemi-FDB603AL
| Part # | onsemi-FDB603AL |
Download  | onsemi-FDB603AL |
April 1998
FDP603AL / FDB603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance. These
devices are particularly suited for low
voltage applications such as DC/DC converters and high
efficiency switching circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
33 A, 30 V. R
DS(ON)
= 0.022
W
@ V
GS
=10 V
R
DS(ON)
= 0.036
W
@ V
GS
=4.5 V
.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
_________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol Parameter
FDP603AL
FDB603AL
Units
Drain-Source Voltage
30
V
V
A
V
DSS
V
GSS
I
D
Gate-Source Voltage – Continuous
Drain Current
– Continuous
– Pulsed
±20
33
(Note 1)
100
50
W
W/
°
C
°C
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
0.33
-65 to 175
275
Operating and Storage Temperature Range
T
J
,T
STG
T
L
Maximum lead temperature for soldering purposes,
1/8″ from case for 5 seconds
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
3
°
C/W
°
C/W
R
q
JC
R
62.5
JA
q
©
1
998
F
a
i
r
c
h
i
ld
S
em
i
c
onductor Corporat
i
o
n
FDP603AL Rev.D
Electrical Characteristics
T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche Energy
Maximum Drain-Source Avalanche Current
V
DD
= 15 V, I
D
= 12 A
100
12
mJ
A
OFF CHARACTERISTICS
BV
DSS
D
BV
DSS
/
D
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA, Referenced to
25
o
C
30
V
mV/
o
C
Breakdown Voltage Temp. Coefficient
32
Zero Gate Voltage
Drain Current
Gate – Body Leakage, Forward
Gate – Body Leakage, Reverse
10
µA
nA
nA
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20
V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
I
GSSF
100
-100
I
GSSR
ON CHARACTERISTICS
(Note
1
)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1
1.8
3
V
I
D
= 250 µA, Referenced to
25
o
C
mV/
o
C
Gate Threshold Voltage Temp.Coefficient
-4.5
D
V
GS(th)
/
D
T
J
R
DS(ON)
Static Drain-Source On-Resistance
0.018 0.022
0.026 0.035
V
GS
= 10 V, I
D
= 25 A
W
T
J
=125 °C
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 4.5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 25 A
0.03
0.036
On-State Drain Current
On-State Drain Current
Forward Transconductance
60
15
A
A
S
I
D(on)
I
D(on)
g
FS
24
DYNAMIC CHARACTERISTICS
Input Capacitance
V
DS
= 15 V,
V
GS
= 0 V,
f =
1.0 MHz
670
345
95
pF
pF
pF
C
iss
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
Turn – On Delay Time
Turn – On Rise Time
8
16
nS
nS
t
D(on)
V
DD
= 15 V,
I
D
= 25 A
102
140
V
GS
= 10 V, R
GEN
= 24
W
t
r
t
D(off)
Turn – Off Delay Time
Turn – Off Fall Time
20
80
36
nS
nS
115
t
f
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 10 V
I
D
= 25 A, V
GS
= 10 V
19
3.5
5.5
26
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuos Drain-Source Diode Forward Current
25
1.3
1.1
A
V
I
S
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 25 A
(Note 1)
1
0.85
T
J
= 125°C
Note
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
FDP603AL Rev.D
Typical Electrical Characteristics
3
2.5
2
80
V
=10V
8.0
7.0
V
GS
= 4.0V
GS
6.0
4.5
60
40
20
0
5.0
5.0
4.5
6.0
1.5
1
7.0
60
8.0
4.0
4
10
3.0
0.5
0
1
2
3
5
0
20
40
, DRAIN CURRENT (A)
80
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I
D
Fi
g
ure 2. On-Res
i
s
tance
V
a
r
i
a
t
i
o
n w
i
t
h
Drain Current
and Gate
Voltage.
Fi
g
ure 1. On-Reg
i
o
n Character
i
s
t
i
c
s.
0.06
0.05
0.04
0.03
0.02
0.01
1.8
I
D
= 12.5A
I
D
= 25A
1.6
V
G
S
= 10V
1.4
1.2
1
T
J
= 125°C
25°C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
3
4
5
6
7
8
9
10
T
, JUNCTION TEMPERATURE (°C)
J
V
, GATE TO SOURCE VOLTAGE (V)
GS
Fi
g
ure 3. On-Res
i
s
tance
V
a
r
i
a
t
i
o
n
Fi
g
ure 4. On-Res
i
s
tance
V
a
r
i
a
t
i
o
n w
i
t
h
Gate-to-Source Vo
l
t
age.
w
i
t
h Temperature
.
20
30
25
20
15
10
5
V
= 10V
DS
V
GS
= 0V
T =
125°C
J
1
25°C
-55°C
0.1
0.01
0.001
T
= 125°C
J
25°C
-55°C
0
0.0001
1
2
3
4
5
0
0.2
V
0.4
0.6
0.8
1
1.2
V
, GATE TO SOURCE VOLTAGE (V)
GS
, BODY DIODE FORWARD VOLTAGE (V)
SD
Fi
g
ure 5. Transfer Character
i
s
t
i
c
s
.
Fi
g
ure 6 .
B
o
dy Diode For
w
a
r
d Voltage
V
a
r
i
a
t
i
o
n w
i
t
h Source Current
and Temperature.
FDP603AL Rev.D
Typical Electrical Characteristics
(continued)
2000
1000
500
10
I
= 25A
D
V
= 5.0V
DS
8
6
4
2
0
10V
20V
C
iss
C
oss
200
f = 1 MHz
V
GS
= 0V
C
rss
100
60
0
5
10
, GATE CHARGE (nC)
15
20
0.1
0.3
V
1
4
10
30
Q
g
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
200
100
50
2000
1600
1200
800
400
0
SINGLE PULSE
R
q
JC
=3.0° C/W
T
C
= 25°C
20
10
5
V
GS
= 10V
SINGLE PULSE
R
q
J
C
=
3
o
C/W
T
A
= 25 °C
2
1
0.5
0.5
1
3
5
10
20
30
50
0.01
0.1
1
10
100
1000
V
, DRAIN-SOURCE VOLTAGE (V))
SINGLE PULSE TIME (ms)
DS
Figure 10. Single Pulse Maximum Power
Dissipation.
Fi
g
ure 9. Max
i
m
um Safe Operat
i
n
g Area.
1
D = 0.5
0.5
0.3
0.2
0.2
R
(t) = r(t)
* R
q
JC
R
q
JC
= 3.0 °C/W
q
JC
0.1
0.1
P(pk)
0.05
0.05
0.02
t
1
t
2
0.03
T
– T
= P
* R
(t)
0.01
J
q
C
JC
0.02
Duty Cycle, D = t
1
/
t
2
Single Pulse
0.05
0.01
0.01
0.1
0.5
1
5
10
50
100
500
1000
t
1
, TIME (ms)
Fi
g
ure 11. Trans
i
e
nt Thermal Response Curve
.
FDP603AL Rev.D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOL
T
™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenc
h
â
QFET™
EcoSPARK™
E
2
CMOS
TM
TinyLogic™
QS™
EnSigna
TM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILEN
T
S
WITCHE
R
â
FACT™
FACT Quiet Series™
UltraFE
T
â
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILIT
Y
A
RISING OUT OF THE APPLICATION OR USE O
F
A
NY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICE
S
O
R
S
YSTEM
S
W
ITHOU
T
T
H
E
E
XPRES
S
W
RITTE
N
A
PPROVA
L
O
F
F
AIRCHIL
D
S
EMICONDUCTO
R
C
ORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
