onsemi-FDB8832
| Part # | onsemi-FDB8832 |
Download  | onsemi-FDB8832 |
October 2011
FDB8832
®
N-Channel Logic Level PowerTrench
MOSFET
30V, 80A, 2.1m
Ω
Features
Applications
Typ r
DS(on)
= 1.5m
Ω
at V
GS
= 5V, I
D
= 80A
Starter / Alternator Systems
Typ Q
g(5)
= 100nC at V
GS
= 5V
Low Miller Charge
Electronic Power Steering Systems
DC-DC Converters
Low Q
rr
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
©2011 Fairchild Semiconductor Corporation
FDB8832 Rev. A1
1
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
V
V
V
GS
±20
Drain Current Continuous (T
C
< 165
o
C, V
GS
= 10V)
Drain Current Continuous (T
C
< 163
o
C, V
GS
= 5V)
Drain Current Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 43
o
C/W)
Pulsed
80
80
I
D
A
34
See Figure 4
1246
E
AS
P
D
Single Pulse Avalanche Energy
(Note 1)
mJ
W
W/
o
C
o
C
Power Dissipation
Derate above 25
o
C
300
2
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to +175
Thermal Characteristics
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case
0.5
62
43
o
C/W
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient, lin
2
copper pad area
(Note 2)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
800 units
FDB8832
FDB8832
TO-263AB
330mm
24mm
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
30
–
–
–
–
–
–
V
1
V
DS
= 24V
I
DSS
μ
A
nA
V
GS
= 0V
T
J
= 150°C
–
250
±
100
I
GSS
V
GS
=
±
20V
–
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
1.0
1.6
1.4
1.5
1.6
3.0
1.9
2.1
2.2
V
I
D
= 80A, V
GS
= 10V
–
–
–
I
D
= 80A, V
GS
= 5V
r
DS(on)
Drain to Source On Resistance
I
D
= 80A, V
GS
= 4.5V
m
Ω
I
D
= 80A, V
GS
= 10V
T
J
= 175°C
–
2.3
3.0
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
–
–
–
–
–
–
–
–
–
–
11400
2140
1260
1.2
–
pF
pF
pF
Ω
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
–
–
V
GS
= 0.5V, f = 1MHz
V
GS
= 0 to 10V
–
265
130
14.2
–
Q
g(TOT)
T
o
tal Gate Charge at 10V
204
100
10.9
33
nC
nC
nC
nC
nC
nC
Q
g(5)
Q
g(TH)
Q
gs
T
o
tal Gate Charge at 5V
V
GS
= 0 to 5V
V
DD
= 15V
I
D
= 80A
Threshold Gate Charge
V
GS
= 0 to 1V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
I
g
= 1.0mA
Q
gs2
Q
gd
22
–
43
–
FDB8832 Rev. A1
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t
(on)
t
d(on)
t
r
Turn-On Time
–
–
–
–
–
–
–
155
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
24
73
54
38
–
–
–
V
V
DD
= 15V, I
D
= 80A
GS
= 5V, R
GS
= 1.5
Ω
t
d(off)
t
f
–
–
t
off
149
Drain-Source Diode Characteristics
I
SD
= 75A
–
–
–
–
0.8
0.8
59
1.25
1.0
77
V
V
V
SD
Source to Drain Diode Voltage
I
SD
= 40A
t
rr
Reverse Recovery Time
I
F
= 75A, di/dt = 100A/
μ
s
I
F
= 75A, di/dt = 100A/
μ
s
ns
nC
Q
rr
Reverse Recovery Charge
67
87
Notes:
o
1:
Starting T
= 25
C, L = 0.61mH, I
= 64A, V
= 30V, V
= 10V.
J
AS
DD
GS
2:
Pulse width = 100s.
FDB8832 Rev. A1
3
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
350
300
250
200
150
100
50
CURRENT LIMITED
BY PACKAGE
V
GS
= 10V
V
GS
= 5V
0
25
0
25
50
75
100
125
150
175
50
75
100
125
150
175
T
C
, CASE TEMPERATURE
(
o
C
)
T
C
, CASE TEMPERATURE
(
o
C
)
Figure 1.
Normalized Power Dissipation vs Case
Temperature
Figure 2.
Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE – DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t
/t
1
2
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JC
θ
JC C
SINGLE PULSE
1E-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 3.
Normalized Maximum Transient Thermal Impedance
10000
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
CURRENT AS FOLLOWS:
1000
100
10
175 – T
C
I = I
25
150
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION(s)
Figure 4.
Peak Current Capability
FDB8832 Rev. A1
4
Typical Characteristics
4000
1000
500
100
If R = 0
= (L)(I
)/(1.3*RATED BV
10us
t
AV
– V
)
AS
DSS
DD
If R
≠
0
t
AV
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
DSS DD
AS
100us
100
STARTING T
J
= 25
o
C
10
LIMITED
BY PACKAGE
10
1
STARTING T
J
= 150
o
C
1ms
1
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
T
J
=
MAX RATED
10ms
DC
o
T
C
= 25
C
0.1
60
1
10
5000
1000
0.01
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6.
Unclamped Inductive Switching
Capability
Figure 5.
Forward Bias Safe Operating Area
200
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
DD
= 5V
150
100
50
150
T
J
= 175
o
C
T
J
= 25
o
C
V
GS
= 3.5V
V
GS
= 3V
100
50
0
T
J
= -55
o
C
0
0
1
2
3
4
0.0
0.5
1.0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 7.
Transfer Characteristics
Figure 8.
Saturation Characteristics
4
3
2
1
0
1.6
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
T
J
= 175
o
C
T
J
= 25
o
C
I
D
= 80A
GS
= 10V
V
-80
-40
0
40
80
120
160
200
2
4
6
8
10
o
T
J
, JUNCTION TEMPERATURE
(
C
)
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
Figure 9.
Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10.
Normalized Drain to Source On
Resistance vs Junction Temperature
FDB8832 Rev. A1
5
Typical Characteristics
1.10
1.05
1.00
0.95
0.90
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
D
= 250
μ
A
V
GS
=
V
DS
I
D
=
250
μ
A
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE
(
o
C
)
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 11.
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12.
Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
40000
I
D
= 80A
C
iss
8
10000
V
DD
= 12V
V
DD
= 15V
C
oss
6
V
DD
= 18V
4
C
rss
1000
2
0
f = 1MHz
V
GS
= 0V
100
0.1
0
50
100
150
200
250
1
10
50
Q
g
,
GATE CHARGE(nC)
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Figure 13.
Capacitance vs Drain to Source
Voltage
Figure 14.
Gate Charge vs Gate to Source Voltage
FDB8832 Rev. A1
6
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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Not In Production
Rev. I58
FDB8832 Rev. A1
7
