onsemi-FDB8876
| Part # | onsemi-FDB8876 |
Download  | onsemi-FDB8876 |
November 2005
FDB8876
N-Channel PowerTrench
®
MOSFET
30V, 71A, 8.5m
Ω
General Descriptions
Features
r
DS(ON)
= 8.5m
Ω
, V
GS
= 10
V
,
I
D
= 40A
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It
has been optimized for low gate charge, low
r
DS(ON)
= 10.3m
Ω
, V
GS
= 4.5V, I
D
= 40A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
r
DS(ON)
and fast switching speed.
High power and current handling capability
RoHS Compliant
D
GATE
G
DRAIN
SOURCE
(FLANGE)
TO-263AB
S
FDB SERIES
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Parameter
Ratings
30
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
V
V
±20
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V)
Pulsed
71
65
A
A
I
D
Figure 4
180
A
E
AS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
mJ
W
o
C
P
D
70
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to 175
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263,1in
2
copper pad area
2.14
43
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
24mm
Quantity
FDB8876
FDB8876
TO-263AB
330mm
800 units
©2005 Fairchild Semiconductor Corporation
FDB8876 Rev. A
1
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
µ
A, V
GS
= 0V
30
–
–
V
V
DS
= 24V
1
µ
A
I
DSS
V
GS
= 0V
T
A
= 150
o
C
–
–
–
–
250
±100
I
GSS
V
GS
= ±20V
nA
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
µ
A
I
D
= 40A, V
GS
= 10V
I
D
= 40A, V
GS
= 4.5V
1.2
–
2.5
8.5
V
–
–
5.7
7.3
10.3
r
DS(ON)
Drain to Source On Resistance
m
Ω
I
D
= 40, V
GS
= 10
V
,
T
A
= 175
o
C
–
11
14
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Input Capacitance
–
–
–
–
–
–
–
–
–
–
1700
340
220
2.1
32
–
–
pF
pF
pF
Ω
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
–
V
GS
=0.5V, f = 1MHz
–
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
T
o
tal Gate Charge at 10V
T
o
tal Gate Charge at 5V
Threshold Gate Charge
Gate to Sourse Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
GS
= 0V to 10V
45
24
2.4
–
nC
nC
nC
nC
nC
nC
V
DD
= 15V
V
GS
= 0V to 5V
I
D
= 40A
I
g
= 1.0mA
17
V
GS
= 0V to 1V
1.6
4.7
3.1
6.8
Q
gs2
Q
gd
–
–
Switching Characteristics
(V
GS
= 10V)
t
ON
t
d(ON)
t
r
Turn-On Time
Turn-On Delay Time
Rise Time
–
–
–
–
–
–
–
9
183
ns
ns
ns
ns
ns
ns
–
113
50
41
–
–
V
DD
= 15V, I
D
= 40A
V
GS
= 10V, R
GS
= 10
Ω
t
d(OFF)
t
f
Turn-Off Delay Time
Fall Time
–
–
t
OFF
Turn-Off Time
137
Drain-Source Diode Characteristic
I
SD
= 40A
–
–
–
–
–
–
–
–
1.25
1.0
22
V
V
V
SD
Source to Drain Diode Voltage
I
SD
= 3.2A
t
rr
Reverse Recovery Time
I
SD
= 40A, dI
SD
/dt=100A/
µ
s
I
SD
= 40A, dI
SD
/dt=100A/
µ
s
ns
nC
Q
RR
Reverse Recovered Charge
8
Notes:
O
1: Starting T =25
C,L=1mH,I =19A,V =27V,V =10V
J
AS
DD
GS
2
FDB8876 Rev. A
Typical Characteristics
T
A
= 25°C unless otherwise noted
100
80
60
40
20
0
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
=10V
o
=25 C
3v
3.5v
4v
4.5v
5v
GS
T
C
V
=4.5V
GS
10v
V
=3.5V
V
GS
=3V
GS
PULSE DURATION=80
µ
S
DUTY CYCLE=0.5%MAX
0.0
0.5
1.0
1.5
2.0
2.5
10
20
30
40
50
60
70
80
V
,DRAIN TO SOURSE VOLTAGE(V)
I
,DRAIN CURRENT
DS
D
Figure 1.
On Region Characteristics
Figure 2.
On-Resistance Variation with Drain
Current and Gate Voltage
1.6
0.016
PULSE DURATION=80
µ
S
DUTY CYCLE=0.5%MAX
I
= 40A
I
=40A
D
D
V
= 10V
GS
1.4
1.2
1.0
0.8
0.6
0.014
0.012
0.010
0.008
0.006
o
T
= 125
C
A
PULSE DURATION=80
µ
S
DUTY CYCLE=0.5%MAX
o
T =
25 C
A
3
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
o
V
, GATE TO SOURCE VOLTAGE (V)
T ,
JUNCTION TEMPERATURE
(
C
)
GS
J
Figure 3.
On Resistance Variation with
Temperature
Figure 4.
On-Resistance Variation with
Gate-to-Source Votlage
100
160
PULSE DURATION = 80
m
s
V =0V
GS
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
10
120
80
40
0
o
125 C
1
o
T
= 175
C
J
o
25 C
o
T
= 25
C
J
0.1
o
T
= -55
C
o
J
-25 C
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
, BODY DIODE FORWARD VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
SD
GS
Figure 5.
Transfer Characteristics
Figure 6.
Body Diode Forward Voltage Variation
With Source Current and Temperature
3
FDB8876 Rev. A
Typical Characteristics
T
A
= 25°C unless otherwise noted
10
8
5000
V =15V
DD
C
ISS
=
C
GS
+ C
GD
6
1000
C
OSS
≅
C
DS
+ C
GD
4
C
RSS
=
C
GD
WAVEFORMS IN
DESCENDING ORDER:
2
I
D
=40A,I =5A
D
V
GS
= 0V, f = 1MHz
0
100
0.1
1
10
30
0
5
10
15
20
25
30
35
V
, DRAIN TO SOURCE VOLTAGE (V)
Qg,GATE CHARGE(nC)
DS
Figure 7.
Gate Charge characteristics
Figure 8.
Saturation characteristics
1000
100
10
1
10
µ
s
100
10
1
STARTING T
J
= 25
o
C
100
µ
s
STARTING T
J
= 150
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
– V
DD
If R
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
– V
DD
) +1]
SINGLE PULSE
10ms
DC
)
T
J
= MAX RATED
≠
0
T
C
= 25
o
C
0.1
0.001
0.01
0.1
1
10
100
1
10
60
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
t
AV
, TIME IN AVALANCHE (ms)
Figure 9.
Unclamped Inductive Switching
Capability
Figure 10.
Safe Operating Area
800
80
SINGLE PULSE
o
R
θ
= 2.14
C/W
JC
o
T
= 25
C
J
60
40
20
0
V
= 10V
GS
V
= 4.5V
GS
100
60
-5
-4
-3
-1
1
-2
0
10
10
10
10
10
10
10
25
50
75
100
125
150
175
o
t, PULSE WIDTH (s)
T ,
CASE TEMPERATURE (
C)
C
Figure 12.
Normalized Drain to Source Breake
Down Voltage vs Junction Temperature
Figure 11.
Maximum Continuous Drain Current vs
Case Temperature
4
FDB8876 Rev. A
Typical Characteristics
T
A
= 25°C unless otherwise noted
2
DUTY CYCLE – DESCENDING ORDER
0.5
0.2
1
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
q
JC
x R
q
JC
+ T
C
SINGLE PULSE
0.01
-2
-3
-4
-5
1
-1
10
t, RECTANGULAR PULSE DURATION (s)
10
0
10
10
10
10
10
Figure 13.
Normolized Maximum Transient Thermal Impedance
5
FDB8876 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
®
ACEx™
PowerSaver™
SuperSOT™-6
SuperSOT™-8
SyncFET™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
®
PowerTrench
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT
™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
QFET
®
QS™
TinyLogic
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μ
SerDes™
ScalarPump™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
®
I
2
C™
UltraFET
MSXPro™
OCX™
UniFET™
VCX™
Wire™
i-Lo
™
ImpliedDisconnect™
IntelliMAX™
OCXPro™
OPTOLOGIC
®
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Across the board. Around the world.™
®
The Power Franchise
SuperFET™
SuperSOT™-3
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVE
S
T
HE RIGH
T
T
O MAKE CHANGES WITHOU
T
F
URTHER NOTIC
E
T
O
A
NY
PRODUCTS HEREI
N
T
O IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD DOES NO
T
A
SSUM
E
A
N
Y
L
IABILITY
ARISING OU
T
O
F
T
H
E
A
PPLICATION OR USE O
F
A
N
Y
P
RODUC
T
O
R CIRCUI
T
D
ESCRIBED HEREIN; NEITHER DOES IT
CONVE
Y
A
N
Y
L
ICENSE UNDER ITS PATEN
T
R
IGHTS, NO
R
T
HE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17
