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November 2014
FDBL0120N40
®
N-Channel PowerTrench
MOSFET
40 V, 240 A, 1.2 m
Ω
Features
Typical R
= 0.9 m
Ω
at V
= 10V, I
= 80 A
GS D
DS(on)
Typical Q
= 90 nC at V
= 10V, I
= 80 A
g(tot)
GS
D
D
UIS Capability
RoHS Compliant
Applications
Industrial Motor Drive
Industrial Power Supply
Industrial Automation
Battery Operated tools
Battery Protection
Solar Inverters
G
S
For current package drawing, please refer to the Fairchild web
‐
ifications/packageDetails.html?id=PN_PSOFA
‐
008
UPS and Energy Inverters
Energy Storage
Load Switch
MOSFET Maximum Ratings
T
J
= 25°C unless otherwise noted.
Symbol
V
DSS
Parameter
Ratings
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
40
±20
V
V
V
GS
Drain Current – Continuous (V
GS
=10) (Note 1)
Pulsed Drain Current
T
C
= 25°C
T
C
= 25°C
240
I
D
A
See Figure 4
316
E
AS
P
D
Single Pulse Avalanche Energy
(Note 2)
(Note 3)
mJ
W
W/
o
C
o
C
o
C/W
o
C/W
Power Dissipation
Derate Above 25
o
C
300
2.0
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to + 175
0.5
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
43
Notes:
1: Current
is limited by bondwire configuration.
2: Starting
T =
25°C, L = 0.1mH, I
= 79.5A, V
= 40V during inductor charging and V
= 0V during time in avalanche.
J
AS
DD
DD
3: R
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins.
presented here is based on mounting on a 1 in
pad of 2oz copper.
R
is guaranteed by design, while R
is determined by the board design.
The maximum rating
θ
JC
θ
JA
2
Package Marking and Ordering Information
Device Marking
Device
Package
FDBL0120N40
FDBL0120N40
MO-299A
–
–
–
©2014 Fairchild Semiconductor Corporation
FDBL0120N40 Rev.C3
1
Electrical Characteristics
T
J
= 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
B
VDSS
I
DSS
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
40
–
–
–
–
–
–
1
V
V
DS
= 4 0 V ,
T
J
= 25
o
C
μ
A
mA
nA
V
GS
= 0V
T
J
= 175
o
C (Note 4)
–
1
I
GSS
V
GS
= ±20V
–
±100
On Characteristics
V
GS(th)
R
DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
3.2
4.0
V
T
J
= 25
o
C
–
–
0.90
1.64
1.20
1.86
m
Ω
m
Ω
I
D
= 80A,
GS
= 10V
T
J
= 175
o
C (Note 4)
V
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
7735
2160
129
2.5
–
pF
pF
pF
Ω
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
C
oss
C
rss
R
g
Output Capacitance
–
Reverse Transfer Capacitance
Gate Resistance
–
f = 1MHz
–
107
15.5
–
Q
g(
T
o
T)
Q
g(th)
Q
gs
T
o
tal Gate Charge at 10V
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
V
GS
= 0 to 10V
V
90
nC
nC
nC
nC
DD
= 32V
D
= 80A
V
GS
= 0 to 2V
13.5
43
I
Q
gd
10
–
Switching Characteristics
t
on
t
d(on)
t
r
Turn-On Time
Turn-On Delay
Rise Time
–
–
–
–
–
–
–
102
ns
ns
ns
ns
ns
ns
33
40
47
23
–
–
–
V
V
DD
= 20V, I
D
= 80A,
GS
= 10V, R
GEN
= 6
Ω
t
d(off)
t
f
Turn-Off Delay
Fall Time
–
–
t
off
Turn-Off Time
91
Drain-Source Diode Characteristics
I
SD
=80A, V
GS
= 0V
–
–
–
–
–
–
1.25
1.2
V
V
SD
Source-to-Drain Diode Voltage
I
SD
= 40A, V
GS
= 0V
V
t
rr
Reverse-Recovery Time
91
128
107
167
ns
nC
I
F
= 80A, dI
SD
/dt = 100A/
μ
s,
V
DD
=32V
Q
rr
Reverse-Recovery Charge
Note:
4: The
maximum value is specified by design at T
= 175°C.
Product is not tested to this condition in production.
J
FDBL0120N40 Rev.C3
2
Typical Characteristics
500
400
300
200
100
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY PACKAGE
V
GS
= 10V
CURRENT LIMITED
BY SILICON
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
T
C
, CASE TEMPERATURE(
o
C)
T
C
, CASE TEMPERATURE(
o
C)
Figure 2.
Maximum Continuous Drain Current vs.
Case Temperature
Figure 1.
Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE – DESCENDING ORDER
1
D = 0.50
0.20
P
0.10
DM
0.05
0.02
0.01
t
0.1
1
t
2
NOTES:
DUTY FACTOR: D = t
/t
1
2
SINGLE PULSE
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JA
θ
JA C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 3.
Normalized Maximum Transient Thermal Impedance
10000
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
1000
100
10
175 – T
C
I = I
2
150
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION(s)
Figure 4.
Peak Current Capability
FDBL0120N40 Rev.C3
3
Typical Characteristics
2000
1000
If R = 0
= (L)(I
)/(1.3*RATED BV
1000
100
10
t
AV
– V
)
AS
DSS
DD
If R
AV
≠
0
t
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
AS
DSS DD
100
100us
1ms
OPERATION IN THIS
AREA MAY BE
STARTING T
J
= 25
o
C
10
LIMITED BY r
DS(on)
1
10ms
STARTING T
J
= 150
o
C
SINGLE PULSE
100ms
T
J
= MAX RATED
o
T
C
= 25
C
1
0.1
0.001 0.01
0.1
1
10
100 1000
10000
0.1
1
10
100 200
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6.
Unclamped Inductive Switching
Capability
Figure 5.
Forward Bias Safe Operating Area
300
400
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
100
240
180
120
60
V
DD
= 5V
T
J
= 175
o
C
T
J
= 25
o
C
10
1
T
J
= 25
o
C
T
J
= 175
o
C
T
J
= -55
o
C
0
0.1
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7.
Transfer Characteristics
Figure 8.
Forward Diode Characteristics
300
300
V
GS
15V Top
10V
8V
7V
6V
250
200
150
100
50
250
200
150
100
50
V
GS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
5.5V
5V Bottom
5V
80
μ
s PULSE WIDTH
Tj=25
o
C
5V
80
μ
s PULSE WIDTH
Tj=175
o
C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9.
Saturation Characteristics
Figure 10.
Saturation Characteristics
FDBL0120N40 Rev.C3
4
Typical Characteristics
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
=
80A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
8
6
4
2
0
T
J
= 175
o
C
T
J
= 25
o
C
I
D
= 80A
V
GS
= 10V
2
4
6
8
10
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 11.
R
DSON
vs. Gate Voltage
Figure 12.
Normalized R
DSON
vs. Junction
Temperature
1.5
1.10
V
GS
=
V
DS
I
D
= 1mA
I
D
= 250
μ
A
1.2
0.9
0.6
0.3
0.0
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE(
o
C)
Figure 13.
Normalized Gate Threshold Voltage vs.
Temperature
Figure 14.
Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
100000
10
I
D
= 80A
V
DD
= 20V
8
10000
C
iss
V
DD
=16V
V
DD
= 24V
6
4
2
0
1000
C
oss
100
10
C
rss
f = 1MHz
V
GS
= 0V
0.1
1
10
100
0
20
40
60
80
100
Q
g
,
GATE CHARGE(nC)
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Figure 15.
Capacitance vs. Drain to Source
Voltage
Figure 16.
Gate Charge
vs. Gate to Source
Voltage
FDBL0120N40 Rev.C3
5
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Datasheet contains the design specifications for product development. Specifications
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I71
FDBL0120N40 Rev.C3
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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