onsemi-FDBL86366-F085
| Part # | onsemi-FDBL86366-F085 |
Download  | onsemi-FDBL86366-F085 |
N-Channel
80
V
,
2
20 A, 3.0 m
W
FDBL86366-F085
Features
•
Typical R
•
Typical Q
•
UIS Capability
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
These Devices are Pb
−
Free and are RoHS Compliant
= 2.4 m
ꢀ
at V
= 10
V
, I
=
8
0 A
GS D
DS(on)
= 86 nC at V
= 10
V
, I
=
8
0 A
g(tot)
GS
D
D
Applications
G
•
Automotive Engine Control
•
PowerTrain Management
•
Solenoid and Motor Drivers
•
Integrated Starter/Alternator
•
Primary Switch for 12 V Systems
S
N
−
Channel
MOSFET MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Drain
−
to
−
Source Voltage
Gate
−
to
−
Source Voltage
Drain Current
−
Continuous
Ratings
80
Unit
V
V
DSS
V
A
V
GS
20
H
−
PSOF8L
CASE 100CU
I
D
220
GS
C
205
Pulsed Drain Current, T
= 25
°
C
MARKING DIAGRAM
C
mJ
E
AS
Single Pulse Avalanche Energy
W
P
300
2.0
Power Dissipation
D
$Y&Z&3&K
FDBL
86366
W/
°
C
°
C
Derate Above 25
°
C
T , T
−
55 to +175
0.5
Operating and Storage
T
e
mperature
Thermal Resistance, Junction to Case
J
STG
°
C/W
°
C/W
R
ꢁ
ꢁ
JC
R
43
Maximum Thermal Resistance,
JA
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Current
is limited by silicon.
FDBL86366
= Specific Device Code
2. Starting
T =
25
°
C, L = 0.1 mH, I
= 64 A, V
= 80 V during inductor charging
J
AS
DD
and V
= 0 V during time in avalanche.
DD
3. R
is the sum of the junction
−
to
−
case and case
−
to
−
ambient thermal
ꢁ
JA
ORDERING INFORMATION
resistance, where the case thermal reference is defined as the solder
{
mounting surface of the drain pins. R
is guaranteed by design, while R
ꢁ
JA
Device
Top Mark
Package Shipping
ꢁ
JC
is determined by the board design. The maximum rating presented here is
FDBL86366 FDBL86366
H
−
PSOF8L 2000
Units/
2
based on mounting on a 1 in
pad of 2oz copper.
−
F085
T
a
pe&Reel
*For additional information on our Pb
−
Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
T
e
chniques Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
January, 2020
−
Rev. 3
FDBL86366
−
F085/D
FDBL86366
−
F085
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
I
Drain
−
to
−
Source Breakdown Voltage
Drain
−
to
−
Source Leakage Current
I
= 250
ꢂ
A, V
= 0 V
80
−
−
−
−
−
−
1
V
DSS
D
GS
V
V
= 80
V
,
= 0 V
T =
25
°
C
J
ꢂ
A
mA
nA
DSS
DS
GS
J
−
1
I
Gate
−
to
−
Source Leakage Current
V
=
20 V
−
100
GSS
GS
ON CHARACTERISTICS
V
R
Gate to Source Threshold Voltage
Drain to Source on Resistance
V
I
= V
, I
= 250
ꢂ
A
2.0
−
3.0
2.4
4.9
4.0
3.0
6.1
V
GS(th)
GS
DS
D
= 80 A,
= 10 V
T =
25
°
C
J
m
ꢀ
ꢀ
DS(on)
D
V
GS
−
m
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 40
V
, V
= 0 V, f = 1
M
Hz
−
−
−
−
−
−
−
−
6320
1030
32
−
−
pF
iss
DS
GS
C
Output Capacitance
pF
pF
ꢀ
oss
C
Reverse Transfer Capacitance
Gate Resistance
−
rss
R
f = 1 MHz
2.1
86
−
g
Q
T
o
tal Gate Charge at 10 V
Threshold Gate Charge
Gate
−
to
−
Source Gate Charge
Gate
−
to
−
Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 to 10 V
= 0 to 2 V
V =
64
V
,
DD
D
112
18
−
nC
nC
nC
nC
g(
T
o
T)
I
= 80 A
Q
12
g(th)
Q
= 64
V
, I
=
8
0 A
30
gs
D
Q
18
−
gd
SWITCHING CHARACTERISTICS
t
Turn
−
On Time
Turn
−
On Delay
Rise Time
V
DD
V
GS
= 40
V
, I
=
8
0 A,
−
−
−
−
−
−
−
98
−
ns
ns
ns
ns
ns
ns
on
D
= 10
V
, R
= 6
ꢀ
GEN
t
t
30
34
40
17
−
d(on)
t
r
−
Turn
−
Off Delay
Fall Time
−
d(off)
t
f
−
t
Turn
−
Off Time
86
off
DRAIN
−
SOURCE DIODE CHARACTERISTIC
V
Source
−
to
−
Drain Diode Voltage
I
I
= 80 A, V
= 0 V
−
−
−
−
−
−
1.25
1.2
V
V
SD
SD
GS
= 40 A, V
= 0 V
SD
GS
t
Reverse
−
Recovery Time
Reverse
−
Recovery Charge
I =
80 A, dI
/dt = 100 A/
ꢂ
s,
F
V
80
95
120
140
ns
nC
rr
SD
= 64 V
DD
Q
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The
maximum value is specified by design at T
= 175
°
C. Product is not tested to this condition in production.
J
2
FDBL86366
−
F085
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
250
200
150
V
GS
= 10 V
Current limited
by silicon
100
50
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
200
T ,
Case
T
e
mperature [
°
C]
C
T ,
Case
T
e
mperature [
°
C]
C
Figure 1. Normalized Power Dissipation
vs. Case Temperature
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
P
DM
0.01
0.1
t
1
t
2
NOTES:
Duty factor: D = t
/ t
SINGLE PULSE
1
2
Peak T
= P
×
Z
ꢁ
×
R
+ T
JA C
ꢁ
J
DM
JA
0.01
−
5
−
4
−
3
−
2
−
1
0
1
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
1000
100
T 25
°
C
C =
For temperatures
above 25
°
C derate peak
current as follows:
V
GS
= 10 V
175
*
T
C
Ǹ
I
+
I
ƪ ƫ
2
150
SINGLE PULSE
10
−
5
−
4
−
3
−
2
−
1
0
1
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 4. Peak Current Capability
3
FDBL86366
−
F085
TYPICAL CHARACTERISTICS
(continued)
1000
1000
100
10
If R = 0
t
= (L)(I
) / (1.3
×
Rated BV
V
)
AV
AS
DSS
−
DD
If R
≠
0
t
= (L/R)ln[(I
×
R) / (1.3
×
Rated BV
−
V )
+ 1]
DSS DD
AV
AS
100
10
1
100
ꢂ
s
Operation in this
area may be
Starting T
= 25
°
C
J
limited by r
DS(on)
1
1 ms
Starting T
= 150
°
C
J
SINGLE PULSE
10 ms
100 ms
T
T
= max rated
= 25
°
C
J
C
0.1
0.1
1
10
100
500
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain to Source Voltage [V]
t ,
Time in Avalanche [ms]
AV
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching Capability
300
300
Pulse duration = 80
ꢂ
s
V
GS
= 0 V
Duty cycle = 0.5% MAX
100
10
1
250
200
150
V
DD
= 5 V
T
= 175
°
C
J
T
J
= 25
°
C
T
J
= 25
°
C
100
50
T
J
=
−
55
°
C
T
J
= 175
°
C
0
2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
V
GS
, Gate to Source Voltage [V]
V
SD
, Body Diode Forward Voltage [V]
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
300
300
V
GS
V
GS
15 V
T
o
p
10 V
8 V
7 V
6 V
15 V
T
o
p
10 V
8 V
7 V
6 V
250
200
150
100
50
250
200
150
80
ꢂ
s Pulse Width
5.5 V
5 V Bottom
5.5 V
5 V Bottom
T
J
= 25
°
C
100
50
80
ꢂ
s Pulse Width
T
J
= 175
°
C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, Drain to Source Voltage [V]
V
DS
, Drain to Source Voltage [V]
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
4
FDBL86366
−
F085
TYPICAL CHARACTERISTICS
(continued)
50
40
2.4
I
D
= 80 A
Pulse duration = 80
ꢂ
s
Duty cycle = 0.5% MAX
Pulse duration = 80
ꢂ
s
Duty cycle = 0.5% MAX
2.0
1.6
1.2
30
20
10
0
T
J
= 25
°
C
T
J
= 175
°
C
0.8
0.4
I
= 80 A
D
V
= 10 V
GS
4
6
8
10
−
80
−
40
0
40
80
120
160
200
V
GS
, Gate to Source Voltage [V]
T , Junction
T
e
mperature [
°
C]
J
Figure 11. R
DSON
vs. Gate Voltage
Figure 12. Normalized R
DSON
vs. Junction Temperature
1.5
1.2
0.9
0.6
0.3
0.0
1.10
I
D
= 5 mA
V
D
= V
DS
GS
I
= 250
ꢂ
A
1.05
1.00
0.95
0.90
−
80
−
40
0
40
80
120
160
200
−
80
−
40
0
40
80
120
160
200
T , Junction
T
e
mperature [
°
C]
J
T , Junction
T
e
mperature [
°
C]
J
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10
10000
I
D
= 80 A
C
iss
V
DD
= 40 V
8
1000
100
10
V
= 32 V
V
DD
= 48 V
DD
6
4
C
C
oss
rss
2
0
f = 1 MHz
GS
V
= 0 V
0.1
1
10
100
0
20
40
60
80
100
Q ,
Gate Charge [nC]
g
V
DS
, Drain to Source Voltage [V]
Figure 15. Capacitance vs. Drain to Source Voltage
Figure 16. Gate Charge vs. Gate to Source Voltage
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H
−
PSOF8L 11.68×9.80
CASE 100CU
ISSUE A
DATE 06 JAN 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXXX
XXXXXXXX
A
Y
= Assembly Location
=
Y
e
ar
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”, may
or may not be present. Some products may
not follow the Generic Marking.
WW =
Work Week
ZZ
XXXX = Specific Device Code
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13813G
H
−
PSOF8L 11.68×9.80
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800
−
282
−
9855
T
o
ll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊
