onsemi-FDC3601N
| Part # | onsemi-FDC3601N |
Download  | onsemi-FDC3601N |
FDC3601N
Dual N-Channel 100V Specified PowerTrench MOSFET
Features
General Description
•
1.0 A, 100 V.
R
DS(ON)
= 500 m
Ω
@ V
GS
= 10 V
These N-Channel 100V specified MOSFETs are
produced using
ON
Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
R
DS(ON)
= 550 m
Ω
@ V
GS
= 6.0 V
•
Low gate charge (3.7nC typical)
•
Fast switching speed.
These devices have been designed to offer exceptional
•
High performance trench technology for extremely
power dissipation in
a very small footprint for
low R
DS(ON)
.
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
•
SuperSOT
TM
-6 package: small footprint 72%
Applications
• Load switch
(smaller than standard SO-8); low profile (1mm thick).
• Battery protection
• Power management
D2
S1
4
5
6
3
2
1
D1
G2
S2
SuperSOT
T
M
-6
G1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
100
Units
V
V
A
V
GSS
Gate-Source Voltage
±
20
I
D
Drain Current
– Continuous
– Pulsed
(Note 1a)
1.0
4.0
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
0.96
0.9
P
D
W
0.7
T
J
, T
STG
Operating and Storage Junction Temperature Range
−
55 to +150
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
R
θ
JA
°
C/W
°
C/W
R
θ
JC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
3000 units
.601
FDC3601N
7’’
8mm
Publication Order Number:
FDC3601N/D
2001
Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
100
V
V
GS
= 0 V,
I
D
= 250
µ
A
∆
BV
DSS
∆
T
J
Breakdown Voltage Temperature
Coefficient
105
I
D
= 250
µ
A,Referenced to 25
°
C
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
= 80 V,
V
GS
= 20 V,
V
GS
= 0 V
V
DS
= 0 V
10
µ
A
nA
nA
I
GSSF
I
GSSR
100
V
GS
= –20 V,
V
DS
= 0 V
–100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
2
3
2.6
–5
4
V
V
DS
= V
GS
,
I
D
= 250
µ
A
∆
V
GS(th)
∆
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
µ
A,Referenced to 25
°
C
mV/
°
C
m
Ω
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V,
V
GS
= 6 V,
V
GS
= 10 V, I
D
= 1.0 A, T
J
= 125
°
C
I
D
= 1.0 A
I
D
= 0.9 A
370
396
685
500
550
976
I
D(on)
g
FS
On–State Drain Current
V
GS
= 10 V,
V
DS
= 5V,
V
DS
= 10 V
I
D
= 1.0 A
A
S
Forward Transconductance
3.6
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
153
5
pF
pF
pF
V
DS
= 50
V,
f = 1.0 MHz
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
1
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
8
4
16
8
ns
ns
V
DD
= 50 V,
I
D
= 1 A,
R
GEN
= 6
Ω
V
GS
= 10 V,
11
6
20
12
5
ns
ns
Q
g
Q
gs
Q
gd
3.7
0.8
1
nC
nC
nC
V
V
DS
= 50 V,
GS
= 10 V
I
D
= 1.0 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
0.8
1.2
A
V
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 0.8 A
(Note 2)
0.8
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
a)
130
°
C/W when
mounted on a 0.125
in
2
pad of 2 oz.
copper.
b)
140°C/W when
mounted on a .004 in
2
pad of 2 oz copper
c)
180°C/W when mounted on a
minimum pad.
2.
Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
2
Typical Characteristics
1.6
1.4
1.2
1
4
V
GS
= 10V
5.0V
6.0V
4.5V
V
GS
= 4.0V
3
2
1
0
4.0V
4.5V
5.0V
6.0V
10V
0.8
0
1
2
I
D
, DRAIN CURRENT (A)
3
4
0
2
4
6
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.25
1
2.6
I
D
= 0.5A
I
D
= 1.0A
V
GS
=10V
2.2
1.8
1.4
1
T
A
= 125
o
C
0.75
0.5
T
A
= 25
o
C
0.6
0.2
0.25
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
6
V
GS
= 0V
V
DS
= 5V
1
T
A
= 125
o
C
4.5
3
0.1
25
o
C
-55
o
C
T
A
= 125
o
C
0.01
25
o
C
1.5
0
0.001
-55
o
C
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2.5
3.5
4.5
5.5
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
Typical Characteristics
10
200
150
100
50
V
DS
= 30V
f = 1MHz
V
GS
= 0 V
I
D
= 1.0A
C
ISS
50V
8
6
4
2
0
70V
C
OSS
C
RSS
0
0
1
2
3
4
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
50
40
30
20
10
0
SINGLE PULSE
R
θ
JA
= 180°C/W
100
µ
s
R
DS(ON)
LIMIT
1ms
10ms
100ms
1s
T
A
= 25°C
1
0.1
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 180
o
C/W
0.01
0.001
T
A
= 25
o
C
0.1
1
10
100
1000
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
JA
(t) = r(t) + R
θ
JA
0.2
R
θ
JA
= 180°C/W
0.1
0.1
0.05
P(pk
)
0.02
0.01
t
1
0.01
t
2
J
– T
A
= P * R
θ
JA
(t)
SINGLE PULSE
T
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81
−
3
−
5817
−
1050
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
©
Semiconductor Components Industries, LLC
❖
