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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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August 2016
FDC3612
100V N-Channel PowerTrench
MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
•
2.6 A, 100 V
R
DS(ON)
= 125 m
Ω
@ V
GS
= 10 V
R
DS(ON)
= 135 m
Ω
@ V
GS
= 6 V
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
Low gate charge (14nC typ)
•
High power and current handling capability
•
Fast switching speed
•
DC/DC converter
S
D
D
1
2
3
6
5
4
G
D
SuperSOT
T
M
-6
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
Drain-Source Voltage
100
V
V
A
V
GSS
Gate-Source Voltage
20
2.6
I
D
Drain Current
– Continuous
(Note 1a)
– Pulsed
20
37
(Note 3)
E
AS
P
D
Single Pulse Avalanche Energy
mJ
Maximum Power Dissipation
(Note 1a)
(Note 1b)
1.6
0.8
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
R
θ
JA
R
θ
JC
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.362
FDC3612
7’’
8mm
3000 units
FDC3612 Rev 1.4
20
12
Fairchild Semiconductor Corporation
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
I
AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V
DD
= 50 V, I
D
=2.6 A
90
2.6
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
100
V
V
GS
= 0 V, I
D
= 250
µ
A
∆
BV
DSS
Breakdown Voltage Temperature
99
I
D
= 250
µ
A, Referenced to 25
°
C
mV/
°
C
Coefficient
∆
T
J
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
= 80 V,
V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= –20 V, V
DS
= 0 V
10
100
–100
µ
A
nA
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
2
2.3
– 6
4
V
V
DS
= V
GS
, I
D
= 250
µ
A
I
D
= 250
µ
A, Referenced to 25
°
C
∆
V
GS(th)
Gate Threshold Voltage
mV/
°
C
Temperature Coefficient
∆
T
J
V
GS
= 10 V,
I
D
= 2.6 A
86
91
125
135
240
Static Drain–Source
On Resistance
m
Ω
V
V
V
V
GS
= 6.0 V, I
D
= 2.5 A
R
DS(on)
157
GS
= 10 V,
I
D
= 2.6 A;T
J
= 125
°
C
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
GS
= 10 V,
V
DS
= 5 V
DS
= 10 V,
I
D
= 2.6 A
10
A
S
10
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
660
55
40
pF
pF
pF
V
DS
= 50 V,
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0 MHz
3.0
0.1
1.4
Ω
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
3.5
23
3.7
14
2.3
3.6
11
7
37
7.4
20
ns
ns
ns
V
V
DD
= 50 V,
GS
= 10
V,
I
D
= 1 A,
GEN
= 6
Ω
R
ns
Q
g
Q
gs
Q
gd
nC
nC
nC
V
DS
= 50 V,
I
D
= 2.6 A,
V
GS
= 10 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
1.3
1.2
A
V
V
SD
V
GS
= 0 V,
I
S
= 1.3 A
(Note 2)
(Note 2)
0.76
Voltage
t
rr
Q
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
31
56
nS
nC
I
F
= 2.6 A
d
iF
/d
t
= 100 A/µs
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
a. 78°C/W
when mounted on a 1in
2
pad of 2oz copper on FR-4 board.
b. 156°C/W
when mounted on a minimum pad.
2.
Pulse Test: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
3.
E
of 37 mJ is based on starting T
= 25
°
C; N-ch: L = 3 mH, I
= 5 A, V
= 100 V, V
= 10 V. 100% test at L = 0.3 mH, I
= 11 A.
J AS
DD GS
AS
AS
FDC3612 Rev 1.4
Typical Characteristics
1.8
1.6
1.4
1.2
1
20
V
GS
= 10V
4.5V
5.0V
16
V
GS
= 3.5V
4.0V
12
8
4.0V
4.5V
5.0V
6.0V
10V
3.5V
4
0.8
0
0
4
8
12
16
20
0
2
V
4
6
8
I
D
, DRAIN CURRENT (A)
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.26
0.23
0.2
2.2
1.8
1.4
1
I
D
= 2.6A
GS
= 10V
I
D
= 1.3A
V
T
A
= 125
o
C
0.17
0.14
0.11
0.08
0.05
0.6
0.2
T
A
= 25
o
C
-50
-25
0
25
50
75
100
125
150
2
4
V
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
16
12
8
V
GS
= 0V
V
DS
= 5V
10
T
A
= 125
o
C
1
0.1
25
o
C
-55
o
C
T
A
= 125
o
C
0.01
0.001
25
o
4
-55
o
C
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
2
2.5
V
3
3.5
4
4.5
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC3612 Rev 1.4
Typical Characteristics
10
1000
800
600
400
200
0
f = 1MHz
V
GS
= 0 V
I
D
= 2.6A
V
DS
= 25V
50V
8
6
4
2
0
75V
C
ISS
C
OSS
C
RSS
0
3
6
9
12
15
0
20
40
60
80
100
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
5
0
40
30
20
10
0
SINGLE PULSE
10
R
DS(on)
LIMIT
R
θ
JA
= 156°C/W
T
A
= 25°C
100
μ
s
1
0.1
1ms
10ms
100ms
V
GS
=10V
SINGLE PULSE
R
θ
JA
= 156
o
C/W
A
= 25
o
C
1s
0.01
DC
T
0.001
0.1
1
10
100
200
0.001
0.01
0.1
1
10
100
V
, DRAIN to SOURCE VOLTAGE (V)
DS
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 156 °C/W
0.2
P(pk)
0.1
0.1
t
1
0.05
t
2
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC3612 Rev 1.4
SYMM
C
L
0.95
0.95
C
3.00
2.80
A
1.00 MIN
6
4
B
3.00
2.60
2.60
1.70
1.50
C
1
3
0.50
0.30
0.95
0.70 MIN
M
0.20
A B
1.90
LAND PATTERN RECOMMENDATION
SEE DETAIL A
(0.30)
1.10 MAX
H
1.00
0.70
C
0.10
0.20
0.08
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS
PACKAGE CONFORMS TO JEDEC MO-193.
VAR. AA, ISSUE E.
C
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C PACKAGE
LENGTH DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS
OR GATE BURRS. MOLD
FLASH, PROTRUSIONS OR GATE BURRS SHALL
NOT EXCEED 0.25mm PER END. PACKAGE WIDTH
DOES NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH OR
GAGE PLANE
0.25
8°
0°
PROTRUSION SHALL NOT EXCEED 0.25mm PER
SIDE. PACKAGE LENGTH AND WIDTH DIMENSIONS
ARE DETERMINED AT DATUM H.
D) DRAWING
FILE NAME: MKT-MA06AREVF
0.55
0.35
SEATING PLANE
0.60 REF
DETAIL A
SCALE: 50X
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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coverage may be accessed at
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Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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