onsemi-FDC6321C
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FDC6321C
Dual N & P Channel , Digital FET
Features
N-Ch 25 V, 0.68 A,
R
DS(ON)
= 0.45
W
@ V
GS
= 4.5 V
General Description
P-Ch -25 V, -0.46 A, R
DS(ON)
= 1.1
W
@ V
GS
= -4.5 V.
These dual N & P Channel logic level enhancement mode
field effect transistors are produced using ON
Semiconductor’s proprietary, high cell density, DMOS
technology. This very high density process is especially
tailored to minimize
on-state resistance.
This device
has
been designed especially for low voltage applications as a
replacement for digital transistors in load switching
applications. Since bias resistors are not required this dual
digital FET can replace several digital transistors with
different bias resistors.
Very low level gate drive requirements allowing
direct
operation in 3 V circuits. V
GS(th)
< 1.0V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple dual NPN & PNP digital transistors.
SuperSOT
TM
-6
Mark:.321
SuperSOT
TM
-8
SOT-23
SOIC-16
SO-8
SOT-223
D2
S1
4
3
2
1
D1
5
6
G2
S2
SuperSOT
T
M
-6
G1
Absolute Maximum Ratings
T
A
= 25
o
C unless
other wise noted
Symbol
Parameter
N-Channel
P-Channel
-25
Units
V
V
DSS
, V
CC
Drain-Source Voltage, Power Supply Voltage
V
GSS
, V
IN
Gate-Source Voltage,
25
8
-8
V
I
D
, I
O
Drain/Output Current
– Continuous
– Pulsed
0.68
2
-0.46
-1.5
A
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.9
W
0.7
-55 to 150
6
T
J
,T
STG
ESD
Operating and Storage Tempature Ranger
°C
kV
Electrostatic Discharge
Rating MIL-STD-883D
Human Body
Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R
q
JA
R
q
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
Thermal Resistance, Junction-to-Case
140
60
°C/W
°C/W
(Note 1)
© 1999 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
Publication Order Number:
FDC6321C/D
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Type
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V,
I
D
= 250 µA
V
GS
= 0 V,
I
D
= -250 µA
I
D
= 250 µA, Referenced to
25
o
C
I
D
= -250 µA, Referenced to
25
o
C
V
DS
= 20 V,
V
GS
= 0 V,
T
J
= 55°C
N-Ch
25
V
mV /
o
C
µA
P-Ch -25
N-Ch
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage
Drain Current
Zero Gate Voltage
Drain Current
Gate – Body Leakage Current
26
D
BV
DSS
/
D
T
J
P-Ch
-22
I
DSS
N-Ch
1
10
I
DSS
V
DS
=-20 V,
V
GS
= 0 V,
T
J
= 55°C
P-Ch
-1
µA
-10
100
-100
I
GSS
V
GS
= 8 V,
V
DS
= 0 V
V
GS
= -8 V,
V
DS
= 0 V
N-Ch
P-Ch
nA
nA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage Temp. Coefficient
I
D
= 250 µA, Referenced to
25
o
C
I
D
= -250 µA, Referenced to
25
o
C
N-Ch
-2.6
2.1
0.8
mV /
o
C
V
D
V
GS(th)
/
D
T
J
P-Ch
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= -250 µA
V
GS
= 4.5 V,
I
D
= 0.5 A
N-Ch 0.65
1.5
-1.5
0.45
0.72
0.6
P-Ch -0.65
-0.86
R
DS(ON)
Static Drain-Source On-Resistance
N-Ch
0.33
0.51
0.44
0.87
1.21
1.22
W
T
J
=125°C
T
J
=125°C
V
GS
= 2.7 V,
I
D
= 0.25A
V
GS
= -4.5 V,
I
D
= -0.5 A
P-Ch
1.1
1.8
V
GS
= -2.7 V,
I
D
= -0.25 A
V
GS
= 4.5 V,
V
DS
= 5 V
V
GS
= -4.5 V,
V
DS
= -5 V
V
DS
= 5 V,
I
D
= 0.5
A
1.5
I
D(ON)
On-State Drain Current
N-Ch
P-Ch
N-Ch
P-Ch
1
A
S
-1
g
FS
Forward Transconductance
1.45
0.8
V
DS
= -5 V,
I
D
= -0.5 A
DYNAMIC CHARACTERISTICS
C
Input Capacitance
N-Channel
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
50
63
28
34
9
pF
pF
pF
iss
V
DS
= 10 V, V
GS
= 0 V,
f =
1.0 MHz
C
oss
C
rss
Output Capacitance
P-Channel
Reverse Transfer Capacitance
V
DS
= -10 V, V
GS
= 0V,
f =
1.0 MHz
10
2
Electrical Characteristics
(T
A
= 25
O
C unless otherwise noted )
SWITCHING CHARACTERISTICS
(Note 2)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Type
N-Ch
P-Ch
N-Ch
t
D(on)
Turn – On Delay Time
N-Channel
3
7
8
6
nS
V
DD
= 6 V, I
D
= 0.5 A,
20
16
t
r
Turn – On Rise Time
nS
V
Gs
= 4.5 V, R
GEN
= 50
W
P-Ch
N-Ch
P-Ch
N-Ch
9
18
30
t
D(off)
Turn – Off Delay Time
Turn – Off Fall Time
P-Channel
17
55
13
nS
nS
V
DD
= -6 V, I
D
= -0.5 A,
110
25
t
f
V
Gen
= -4.5 V, R
GEN
= 50
W
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
35
70
2.3
1.5
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
1.64
1.1
nC
nC
nC
V
DS
= 5 V, I
D
= 0.5 A,
V
GS
= 4.5 V
Q
gs
Q
gd
0.38
0.32
0.45
0.25
P- Channel
V
DS
= -5 V,
I
D
= -0.25 A, V
GS
= -4.5 V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
N-Ch
0.3
-0.5
1.2
A
V
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 0.5 A
(Note)
0.83
0.69
-0.89
T
J
=125°C
T
J
=125°C
0.85
-1.2
V
GS
= 0 V,
I
S
= -0.5 A
(Note)
P-Ch
-0.75 -0.85
Notes:
1. R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where thecase thermal reference is defined as the solder mounting surface of the drain pins. R
q
JC
is guaranteed
by design while R
q
CA
is determined by the user’s board design.
2. Pulse
Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
a. 140
O
C/W on a 0.125 in
2
pad of
2oz copper.
b. 180
O
C/W on a 0.005 in
2
of pad
of 2oz copper.
3
Typical Electrical Characteristics:
N-Channel
1.5
2
1.5
1
V
GS
= 4.5V
2.5
3.5
3.0
2.7
V
GS
= 2.0V
1.2
0.9
0.6
0.3
0
2.0
2.5
2.7
3.0
3.5
4.5
1.5
0.5
0
0.5
1
1.5
2
0
0.2
0.4
0.6
0.8
1
1.2
V
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
D
DS
Figure 2. On-Resistance Variation with
Figure 1. On-Region Characteristics
.
Drain Current and Gate Voltage
.
1.6
2
ID= 0.5A
I
D
=0.5 A
V
GS
= 4.5 V
1.4
1.6
1.2
0.8
0.4
0
1.2
1
125°C
25°C
3.5
0.8
0.6
1
1.5
2
2.5
3
4
4.5
5
-50
-25
0
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
GS
T
, JUNCTION TEMPERATURE (°C)
J
Figure 3. On-Resistance Variation
Figure 4. On Resistance Variation with
Gate-To-Source Voltage.
with Temperature
.
1
0.8
0.6
0.4
0.2
0
1
T =
-55°C
J
V
DS
= 5.0V
25°C
125°C
T
= 125°C
V
GS
= 0V
J
0.1
0.01
25°C
-55°C
0.001
0.0001
0
0.5
V
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
, GATE TO SOURCE VOLTAGE (V)
GS
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
Figure 5.
Transfer Characteristics.
4
Typical Electrical Characteristics: N-Channel
(continued)
5
150
V
DS
= 5V
I
D
= 0.5A
100
10V
4
15V
50
C
iss
3
C
oss
20
2
f = 1 MHz
V
GS
= 0V
10
5
C
1
0
rss
0.1
0.5
1
2
5
10
25
0
0.4
0.8
1.2
1.6
2
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Q
, GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics
.
5
4
3
2
1
0
5
SINGLE PULSE
R
q
JA
=See note 1b
1
T =
25°C
A
0.3
0.1
V
GS
= 4.5V
SINGLE PULSE
R
q
JA
= See note 1b
T
A
= 25°C
0.03
0.01
0.01
0.1
1
10
100
300
0.1
0.2
0.5
1
2
5
10
20
40
SINGLE PULSE TIME (SEC)
V
, DRAI N-SOURCE VOLTAGE (V)
DS
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 9. Maximum Safe Operating Area.
5
Typical Electrical Characteristics:
P-Channel
1.5
GS
2.4
2.2
2
V
= -4.5V
-3.5
-3.0
1.25
1
-2.7
V
GS
= -2.0 V
-2.5
1.8
1.6
1.4
1.2
1
0.75
0.5
0.25
0
-2.5
-2.7
-2.0
-3.0
0.6
-3.5
-4.0
-4.5
-1.5
0.8
0
0.2
0.4
0.8
1
0
1
2
3
4
5
-I ,
DRAIN CURRENT (A)
-V ,
DRAIN-SOURCE VOLTAGE (V)
D
DS
Figure 11. On-Region Characteristics
.
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage
.
1.6
1.4
1.2
1
5
I
D
= -0.5A
ID=-0.5A
25°C
V
G
S
= -4.5V
4
3
2
1
0
125°C
0.8
0.6
-1
-1.5
-2
V
-2.5
-3
-3.5
-4
-4.5
-5
-50
-25
0
25
50
75
100
125
150
, GATE TO SOURCE VOLTAGE (V)
GS
T
, JUNCTION TEMPERATURE (°C)
J
Figure 13. On-Resistance Variation
Figure 14. On Resistance Variation with
Gate-To- Source Voltage.
with Temperature
.
0.5
-1
-0.75
-0.5
-0.25
0
V
GS
= 0V
T
= -55°C
V
DS
= -5 V
J
25°C
0.1
T
= 125°C
J
125°C
25°C
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-0.5
-1
V
-1.5
-2
-2.5
-3
-V ,
BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
SD
GS
Figure 15.
Transfer Characteristics.
Figure 16. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
6
Typical Electrical Characteristics:
P-Channel (continued)
5
4
3
2
1
0
150
100
I
D
= -0.5A
V
DS
= -5V
-10V
-15V
C
iss
50
C
oss
20
10
5
C
rss
f = 1 MHz
V
GS
= 0 V
0.1
0.3 0.5
1
5
10 15
25
0
0.3
0.6
0.9
1.2
1.5
1.8
-V ,
DRAIN TO SOURCE VOLTAGE (V)
Q
, GATE CHARGE (nC)
DS
g
Figure 18. Capacitance Characteristics
.
Figure 17. Gate Charge Characteristics
.
2
5
4
3
2
1
0
1ms
1
SINGLE PULSE
R
q
J
A
=See note 1b
T
A
= 25°C
0.3
0.1
1s
V
GS
= -4.5V
SINGLE PULSE
R
JA
= See Note 1b
0.03
0.01
q
T
A
= 25°C
0.1
0.2
0.5
1
2
5
10
20
40
0.01
0.1
1
10
100
300
– V
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
DS
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.5
R
(t) = r(t)
* R
JA
q
JA
q
R
= See Note 1b
0.2
0.2
JA
q
0.1
0.1
P(pk)
0.05
0.05
t
1
t
2
0.02
0.01
T –
T =
P *
R
(t)
JA
q
J
A
Single Pulse
0.02
0.01
Duty Cycle, D = t
1
/ t
2
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 21. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
7
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