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July 2000
FDC6327C
Dual N & P-Channel 2.5V Specified PowerTrench
TM
MOSFET
Features
General Description
These N & P-Channel 2.5V specified MOSFE
T
s
a
re
produced using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low gate
charge for superior switching performance.
•
N-Channel 2.7A, 20V.
R
DS(on)
= 0.08
Ω
@ V
GS
= 4.5V
R
DS(on)
= 0.12
Ω
@ V
GS
= 2.5V
•
P-Channel -1.6A, -20V.R
DS(on)
= 0.17
Ω
@ V
GS
= -4.5V
R
DS(on)
= 0.25
Ω
@ V
GS
= -2.5V
•
Fast switching speed.
These devices have been designed to offer exceptional
power
dissipation in a very small footprint for applications where
the bigger more expensive SO-8 and TSSOP-8 packages
are impractical.
•
Low gate charge.
•
High performance trench technology for extremely
low R
DS(ON)
.
Applications
•
DC/DC converter
•
Load switch
•
SuperSOT
TM
-6 package: small footprint (72% smaller
than SO-8); low profile (1mm thick).
•
Motor driving
D2
S1
3
2
1
4
5
6
D1
G2
S2
SuperSO
T
TM
-6
G1
T
A
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
Parameter
N-Channel
P-Channel
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
20
-20
V
V
A
V
GSS
8
8
±
±
(Note 1a)
I
D
2.7
8
-1.9
-8
(Note 1a)
(Note 1b)
P
D
Power Dissipation
0.96
0.9
W
(Note 1c)
0.7
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
(Note 1a)
(Note 1)
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
130
60
C/W
C/W
θ
JA
θ
JC
°
°
R
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.327
FDC6327C
7”
8mm
3000
1999 Fairchild Semiconductor Corporation
FDC6327C, Rev. E
T
A
= 25°C unless otherwise noted
Electrical Characteristics
Symbol
Parameter
Test Conditions
Type Min
Typ Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
V
GS
= 0 V, I
D
= 250
V
GS
= 0 V, I
D
= – 250
A
N-Ch
P-Ch
20
-20
V
µ
Voltage
A
µ
Breakdown Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25 C
N-Ch
P-Ch
12
-19
mV/ C
DSS
BV
∆
µ
°
°
∆
I
D
= – 250
A, Referenced to 25 C
T
J
µ
°
I
DSS
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
DS
= 16 V, V
GS
= 0 V
N-Ch
P-Ch
All
1
-1
100
A
µ
V
DS
= -16 V, V
GS
= 0 V
I
GSSF
I
GSSR
nA
nA
Gate-Body Leakage, Reverse
V
GS
= -8 V, V
DS
= 0 V
All
-100
(Note 2)
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
V
DS
= V
GS
, I
D
= -250
A
N-Ch
P-Ch -0.4
0.4
0.9
-0.9
1.5
-1.5
V
µ
A
µ
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
A, Referenced to 25 C
N-Ch
P-Ch
-2.1
2.3
mV/ C
GS(th)
V
µ
°
°
∆
I
D
= – 250
A, Referenced to 25 C
T
J
µ
°
∆
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 4.5 V, I
D
= 2.7 A
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
0.069 0.08
0.094 0.13
0.093 0.12
0.141 0.17
0.203 0.27
0.205 0.25
Ω
V
GS
= 4.5 V, I
D
= 2.7 A, T
J
= 125 C
°
V
GS
= 2.5 V, I
D
= 2.2 A
V
V
GS
= -4.5 V, I
D
= -1.6 A
GS
= -4.5 V, I
D
= -1.6 A, T
J
= 125 C
°
V
GS
= -2.5 V, I
D
= -1.3 A
I
D(on)
g
FS
On-State Drain Current
V
GS
= 4.5 V, V
DS
= 5 V
N-Ch
P-Ch
N-Ch
P-Ch
8
-8
A
S
V
GS
= -4.5 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 2.7 A
DS
= -5 V, I
D
= -1.9 A
Forward Transconductance
7.7
4.5
V
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
N-Channel
DS
= 10 V, V
GS
= 0 V, f = 1.0 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
325
315
75
65
35
pF
pF
pF
V
Output Capacitance
P-Channel
DS
= 10 V, V
GS
= 0 V, f = 1.0 MHz
V
Reverse Transfer Capacitance
24
FDC6327C, Rev. E
T
A
= 25°C unless otherwise noted
(continued)
Electrical Characteristics
Symbol
Parameter
Test Conditions
Type Min
Typ Max
Units
(Note 2)
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5V, R
GEN
= 6
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
7
9
14
12
14
3
3
3.25
2.85
0.65
0.68
0.90
0.65
15
14
18
25
22
25
9
9
4.5
4.0
ns
ns
V
Ω
P-Channel
ns
V
DD
= -10 V, I
D
= -1 A,
GS
= -4.5 V, R
GEN
= 6
V
Ω
ns
Q
g
Q
gs
Q
gd
N-Channel
DS
= 10 V, I
D
= 2.7 A, V
GS
= 4.5V
nC
nC
nC
V
P-Channel
DS
= -10 V, I
D
= -1.9 A,V
GS
= -4.5V
V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
N-Ch
P-Ch
0.8
-0.8
1.2
A
V
(Note 2)
V
SD
Drain-Source Diode Forward
V
GS
= 0 V, I
S
= 0.8 A
0.76
-0.79
(Note 2)
Voltage
V
GS
= 0 V, I
S
= – 0.8 A
-1.2
Notes:
1:
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user’s board design. Both devices are assumed to be operating and sharing the dissipated heat energy
equally.
R
a) 130
°
C/W when
mounted on a 0.125 in
2
pad of 2 oz. copper.
b) 140
°
C/W when
mounted on a 0.005 in
2
pad of 2 oz. copper.
c) 180
°
C/W when
mounted on a 0.0015 in
2
pad of 2 oz. copper.
Scale 1 : 1 on
letter size paper
2:
Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
FDC6327C, Rev. E
Typical Characteristics: N-Channel
2.4
2.2
2
10
V
GS
= 4.5V
3.0V
2.5V
8
V
GS
= 2.0V
1.8
1.6
1.4
1.2
1
6
2.0V
4
2.5V
3.0V
2
3.5V
6
4.5V
8
1.5V
0.8
0
0
2
4
10
0
1
2
3
4
150
4
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.25
0.2
0.15
0.1
0.05
0
1.6
1.5
1.4
1.3
1.2
1.1
1
I
D
= 1.3A
I
D
= 2.7A
GS
= 4.5V
V
T
A
= 125
o
C
T
A
= 25
o
C
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
1
10
8
V
GS
= 0V
T
A
= -55
o
C
25
o
C
V
DS
= 5V
125
o
C
T
A
= 125
o
C
25
o
C
0.1
6
-55
o
C
0.01
0.001
4
2
0.0001
0
0
0.4
0.8
1.2
1.6
0
1
2
3
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6327C, Rev. E
Typical Characteristics: N-Channel
(continued)
500
400
300
200
100
0
5
4
3
2
1
0
f = 1MHz
GS
= 0 V
I
D
= 2.7A
V
DS
= 5V
V
10V
15V
C
ISS
C
OSS
C
RSS
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
1
5
4
3
2
1
0
100 s
µ
SINGLE PULSE
R
θ
JA
= 180
o
C/W
T
A
= 25
o
C
R
DS(ON)
LIMIT
1ms
10ms
100ms
1s
DC
0.1
0.01
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 180
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
1000
0.1
1
10
100
SINGLE PULSE TIME (SEC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 9. Maximum Safe Operating Area.
FDC6327C, Rev. E
Typical Characteristics: P-Channel
10
2.4
2.2
2
V
GS
= -4.5V
-3.5V
V
GS
= -2.0V
8
-3.0V
1.8
1.6
1.4
1.2
1
6
-2.5V
-2.5V
4
-3.0V
-3.5V
-2.0V
-4.0V
-4.5V
2
-1.5V
0
0.8
0
1
2
3
4
5
0
2
4
6
8
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-I
D
, DIRAIN CURRENT (A)
Figure 11. On-Region Characteristics.
Figure 12. On-Resistance Variation
with Drain Current and Gate Voltage.
1.5
0.5
0.4
0.3
0.2
0.1
0
I
D
= -1.9A
I
D
= -1A
1.4
1.3
1.2
1.1
1
V
GS
= -4.5V
T
A
= 125
o
C
T
A
= 25
o
C
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE (
o
C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 13. On-Resistance Variation
with Temperature.
Figure 14. On-Resistance Variation
with Gate-to-Source Voltage.
10
8
10
1
T
A
= -55
o
C
V
GS
= 0V
V
DS
= -5V
25
o
C
125
o
C
T
A
= 125
o
C
25
o
C
-55
o
C
6
0.1
4
0.01
0.001
2
0
0.0001
0
1
2
3
4
0
0.4
0.8
1.2
1.6
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY
DIODE FORWARD VOLTAGE (V)
Figure 15. Transfer Characteristics.
Figure 16. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6327C, Rev. E
Typical Characteristics: P-Channel
(continued)
5
4
3
2
1
0
450
400
350
300
250
200
150
100
50
f = 1 MHz
V
GS
= 0 V
V
DS
= -5.0V
I
D
= -1.9A
-10V
-15V
C
ISS
C
OSS
C
RSS
0
0
0.5
1
1.5
2
2.5
3
3.5
0
4
8
12
16
20
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 17. Gate-Charge Characteristics.
Figure 18. Capacitance Characteristics.
10
1
5
4
3
2
1
0
100 s
µ
SINGLE PULSE
R
θ
JA
= 180
o
C/W
R
DS(ON)
LIMIT
1ms
10ms
100ms
T
A
= 25
o
C
1s
DC
0.1
0.01
V
GS
= -4.5V
SINGLE PULSE
R
θ
JA
= 180
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
1000
0.1
1
10
100
SINGLE PULSE TIME (SEC)
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
Figure 20. Single Pulse Maximum
Power Dissipation.
FDC6327C, Rev. E
Typical Characteristics: N & P-Channel
(continued)
1
D = 0.5
0.5
R
(t) = r(t)
* R
θ
JA
θ
JA
= 180°C/W
R
0.2
θ
JA
0.2
0.1
0.1
P(pk)
0.05
t
1
0.05
t
2
0.02
0.01
T
– T
= P
* R
(t)
θ
JA
J
A
Single Pulse
0.02
0.01
Duty Cycle, D = t
/ t
1
2
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 21. Transient Thermal Response Curve.
FDC6327C, Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
QFET™
QS™
QT Optoelectronics™
VCX™
FASTr™
ACEx™
GlobalOptoisolator™
GTO™
HiSeC™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E
2
CMOS
TM
EnSigna
TM
FACT™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
FACT Quiet Series™
FAST
®
PowerTrench
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE T
O
A
NY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NO
T
A
SSUM
E
A
NY LIABILIT
Y
A
RISING OUT OF TH
E
A
PPLICATION OR USE O
F
A
NY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1
