onsemi-FDC642P-F085
| Part # | onsemi-FDC642P-F085 |
Download  | onsemi-FDC642P-F085 |
MOSFET
– P-Channel,
POWERTRENCH
-20
V
,
–
4 A, 100 m
W
FDC642P-F085,
FDC642P-F085P
Features
•
Typ R
•
Typ R
= 52.5 m
W
at V
=
−
4.5
V
, I
=
−
4 A
GS D
DS(on)
= 75.3 m
W
at V
=
−
2.5
V
, I
=
−
3.2 A
DS(on)
GS
D
•
Fast Switching Speed
•
Low Gate Charge (6.9 nC Typical)
TSOT23 6
−
Lead
CASE 419BL
•
High Performance Trench Technology for Extremely Low R
DS(on)
•
SUPERSOT
t
−
6 Package: Small Footprint (72% Smaller than
Standard SO
−
8); Low Profile (1 mm Thick)
•
AEC
−
Q101 Qualified and P
P
A
P Capable
•
This Device is Pb
−
Free and is RoHS Compliant
MARKING DIAGRAM
Applications
&E&Y
&.642&
G
•
Load Switch
•
Battery Protection
•
Power management
1
XXX =
Specific Device Code
&E =
Space Designator
&Y =
Y
e
ar of Production
&.
= Pin One Identifier
G
= Pb
−
Free Package
PINOUT
S
D
D
G
D
D
4
5
6
3
2
1
TM
SuperSOT
−
6
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
September, 2020
−
Rev. 3
FDC642P
−
F085/D
FDC642P
−
F085, FDC642P
−
F085P
MOSFET MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Symbol Parameter
Ratings
Units
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
−
20
V
V
A
DSS
V
8
GS
I
D
−
Continuous (V
= 4.5 V)
−
4
GS
−
Pulsed
−
20
E
Power Dissipation
72
1.2
mJ
W
AS
P
D
T , T
Operating and Storage
T
e
mperature
−
55 to +150
°
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Starting
T =
25
°
C, L = 14.1 mH, I
=
−
3.2 A
J
AS
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Units
°
C/W
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
30
2
Thermal Resistance, Junction to Ambient, 1in
Copper pad Area
103
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
FDC642P
Device
Package
SSOT
−
6
SSOT
−
6
Reel Size
Tape Width
Quantity
3000 Units
3000 Units
FDC642P
−
F085
FDC642P
−
F085P
7
”
7
”
8 mm
8 mm
FDC642P
2
FDC642P
−
F085, FDC642P
−
F085P
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Symbol Parameter
Test Conditions
OFF CHARACTERISTICS
Min
Typ
Max
Units
−
−
−
−
−
I
= 250
m
A, V
= 0 V
GS
B
Drain to Source Breakdown Voltage
−
20
−
V
D
VDSS
μ
A
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
V
=
−
16
V
, V
= 0 V
−
1
DSS
DS
DS
GS
GS
−
=
−
16
V
, V
= 0 V, T
=
1
50
°
C
−
250
100
GS
A
−
I
=
8 V
nA
GSS
ON CHARACTERISTICS
V
GS
V
GS
V
GS
V
GS
V
DD
= V
, I
=
−
250
m
A
DS D
V
r
Gate to Source Threshold Voltage
−
0.4
−
−
0.7
52.5
75.3
72.7
10
−
1.5
65
V
GS(th)
Drain to Source On Resistance
Forward Transconductance
m
W
=
−
4.5
V
, I
=
−
4 A
DS(on)
D
−
=
−
2.5
V
, I
=
−
3.2 A
100
105
−
D
−
= 4.5
V
, I
=
−
4 A, T
= 125
°
C
D
J
−
g
FS
=
−
5
V
, I
=
−
4 A
S
D
DYNAMIC CHARACTERISTICS
V
= 0
V
, V
=
−
10 V
−
−
−
−
−
−
−
C
Input Capacitance
630
160
65
−
−
pF
pF
pF
W
GS
DS
iss
f = 1 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
Gate Resistance
−
rss
f = 1 MHz
−
R
4.4
6.9
1.2
1.8
g
V
V
= 0 V to
−
4.5
V
, V
=
−
10
V
, I
=
−
4 A
9.0
−
nC
nC
nC
Q
T
o
tal Gate Charge at
−
4.5 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
GS
DD
D
g(TOT)
=
−
10 V
=
−
4 A
Q
DD
gs
I
D
−
Q
gd
SWITCHING CHARACTERISTICS
V
DD
V
GS
=
−
10
V
, I
=
−
1 A,
D
−
−
−
−
−
−
t
Turn
−
On Time
Turn
−
On Delay Time
Rise Time
−
7.3
5.5
23.2
9.6
−
23
−
ns
ns
ns
ns
ns
ns
on
=
−
4.5
V
, R
= 6
W
GS
t
d(on)
t
r
−
t
Turn
−
Off Delay Time
Fall Time
−
d(off)
t
f
−
t
Turn
−
Off Time
53
off
DRAIN
−
SOURCE DIODE CHARACTERISTICS
−
−
−
−
V
Source to Drain Diode Voltage
V
I
=
−
1.3 A
−
−
−
1.25
−
1.0
22
SD
SD
I
I
=
−
0.65 A
SD
=
−
1.3 A, dI
/dt = 100 A/
m
s
t
Reverse Recovery Time
17
5.6
ns
SD
SD
rr
Q
Reverse Recovery Charge
7.3
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
FDC642P
−
F085, FDC642P
−
F085P
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
o
150
T
A
, AMBIENT TEMPERATURE
(
C
)
Figure 1. Normalized Power Dissipation
vs. Ambient Temperature
Figure 2. Maximum Continuous Drain Current
vs. Ambient Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
4
FDC642P
−
F085, FDC642P
−
F085P
TYPICAL CHARACTERISTICS
continued)
Figure 6. Unclamped Inductive Switching
Figure 5. Forward Bias Safe Operating Area
Capability
Figure 7. Transfer
Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On
−
Resistance Variation
Figure 10. Normalized Drain to Source On
−
Resistance
vs. Gate to Source Voltage
vs. Junction Temperature
5
FDC642P
−
F085, FDC642P
−
F085P
TYPICAL CHARACTERISTICS
T =
25
°
C unless otherwise noted (continued)
J
Figure 12. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 11. Normalized Gate Threshold Voltage
vs. Junction Temperature
Figure 14. Gate Charge vs. Gate to Source Voltage
Figure 13. Capacitance vs. Drain to Source Voltage
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
SUPERSOT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6
−
Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX M
G
G
1
XXX =
Specific Device Code
M
= Date Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6
−
Lead
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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©
Semiconductor Components Industries, LLC, 2018
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−
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PUBLICATION ORDERING INFORMATION
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T
:
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−
282
−
9855
T
o
ll Free USA/Canada
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