onsemi-FDC654P
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FDC654P
Single P-Channel Logic Level PowerTrench
Ò
MOSFET
General Description
This
P-Channel
Logic
Level
MOSFET
is
produced using
ON Semiconductor
’s advanced
PowerTrench process. It
has been optimized for
battery power management
applications.
Features
·
–3.6 A,
–30 V.
R
DS(ON)
= 75 m
W
@ V
GS
= –10 V
R
DS(ON)
= 125 m
W
@ V
GS
= –4.5 V
Applications
·
·
Low gate charge (6.2 nC typical)
·
·
·
Battery management
Load switch
High performance trench technology for extremely
low R
DS(ON)
Battery protection
S
D
1
2
3
6
5
4
D
G
D
SuperSOT
T
M
-6
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
V
–30
V
GSS
I
D
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
V
A
±
20
–3.6
(Note 1a)
–10
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
1.6
W
0.8
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
R
q
JA
°
C/W
°
C/W
R
q
JC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
3000 units
.654
FDC654P
7’’
8mm
Publication Order Number:
FDC654P /D
Ó
2003
Semiconductor Components Industries, LLC.
October-2017, Rev. 5
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
–30
V
V
GS
= 0 V, I
D
= –250
m
A
Breakdown Voltage Temperature
Coefficient
–22
D
BV
DSS
D
T
J
I
D
= –250
m
A,Referenced to 25
°
C
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
= –24 V,
V
GS
= 0 V
–1
m
A
nA
nA
I
GSSF
I
GSSR
V
GS
= 20 V,
V
DS
= 0 V
100
V
GS
= –20 V,
V
DS
= 0 V
–100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
–1
–5
–1.9
4
–3
V
V
DS
= V
GS
, I
D
= –250
m
A
Gate Threshold Voltage
Temperature Coefficient
D
V
GS(th)
D
T
J
I
D
= –250
m
A, Referenced to 25
°
C
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –10 V,
V
GS
= –4.5 V,
I
D
= –3.6 A
I
D
= –2.7 A
63
100
90
75
125
115
m
W
V
GS
= –10 V, I
D
= –3.6A,T
J
=125
°
C
I
D(on)
g
FS
On–State Drain Current
V
GS
= –4.5 V,
V
DS
= –5 V,
V
DS
= –5 V
I
D
= –3.6 A
A
S
Forward Transconductance
6
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
298
83
pF
pF
pF
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
39
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
13
11
6
12
23
20
12
9
ns
ns
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
W
ns
ns
Q
g
Q
gs
Q
gd
6.2
1
nC
nC
nC
V
DS
= –15 V,
V
GS
= –10 V
I
D
= –3.6 A,
1.2
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
–1.3
–1.2
A
V
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –1.3 A
(Note 2)
–0.8
Notes:
1.
R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
q
JC
is guaranteed by design while R
q
CA
is determined by the user’s board design.
a)
78°C/W when
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
mounted on a 1in
2
pad
of 2 oz copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
2
Typical Characteristics
15
2
1.8
1.6
1.4
1.2
1
V
GS
= -10V
-6.0V
-5.0V
12
9
-4.5V
V
GS
= -3.5V
-4.0V
-4.0V
-4.5V
6
-5.0V
-3.5V
-6.0V
0.8
0.6
0.4
-7.0V
12
3
-10V
-3.0V
0
0
1
2
3
4
5
0
3
6
9
15
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.3
I
D
= -3.6A
V
GS
= -10V
I
D
= -1.8A
0.25
0.2
T
A
= 125
o
C
0.15
0.1
0.8
0.6
T
A
= 25
o
C
0.05
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
10
V
GS
= 0V
T
A
= -55
o
C
V
DS
= -5.0V
25
o
C
125
o
C
1
T
A
= 125
o
C
6
0.1
25
o
C
4
0.01
0.001
-55
o
C
2
0
0.0001
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY
DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
Typical Characteristics
10
400
300
200
100
0
f = 1 MHz
V
GS
= 0 V
V
DS
= -5V
I
D
= -3.6A
-10V
C
ISS
8
6
4
2
0
-15V
C
OSS
C
RSS
0
1
2
3
4
5
6
7
0
6
12
18
24
30
Q
g
, GATE CHARGE (nC)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
10
8
SINGLE PULSE
R
q
JA
= 156°C/W
T
A
= 25°C
R
DS(ON)
LIMIT
10
m
s
100
m
s
1ms
6
10ms
100ms
1s
1
4
V
GS
= -10V
DC
SINGLE PULSE
R
q
JA
= 156
o
C/W
T
A
= 25
o
C
0.1
0.01
2
0
0.1
1
10
100
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
q
JA
(t) = r(t) + R
q
JA
R
q
JA
= 156
o
C/W
0.2
P(pk)
0.1
0.1
t
1
0.05
t
2
0.02
0.01
T
J
– T
A
= P * R
q
JA
(t)
Duty Cycle, D = t
1
/ t
2
100 1000
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
3
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