onsemi-FDC655AN
| Part # | onsemi-FDC655AN |
Download  | onsemi-FDC655AN |
June 1998
FDC655AN
Single N-Channel, Logic Level, PowerTrench
TM
MOSFET
General Description
Features
6.3 A, 30 V.
R
DS(ON)
= 0.027
W
@ V
GS
= 10 V
This N-Channel
Logic Level
MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench process
that has been especially tailored to minimize on-state
R
DS(ON)
= 0.035
W
@ V
GS
= 4.5 V.
Fast switching.
resistance and yet maintain superior switching performance.
Low gate charge ( typical 9 nC)
.
These devices are well suited for low voltage and battery
powered applications
where low in-line power loss and fast
switching are
required.
SuperSOT
TM
-6 package: small footprint (72% smaller than
SO-8); low profile (1mm thick); pin compatible with
TSOP-6.
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOIC-16
SOT-223
SOT-23
S
D
1
6
5
4
D
2
3
G
D
1
pin
SuperSO
T
TM
-6
D
Absolute Maximum Ratings
T
A
= 25°C unless otherwise note
Symbol Parameter
FDC655AN
Units
Drain-Source Voltage
30
±20
6.3
V
V
DSS
V
GSS
I
D
Gate-Source Voltage – Continuous
Drain Current – Continuous
V
A
(Note 1a)
– Pulsed
20
Maximum Power Dissipation
(Note 1a)
(Note 1b)
1.6
W
P
D
0.8
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
q
J
A
R
q
J
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
°C/W
°C/W
FDC
6
55
A
N Rev.C
©
1
998
F
a
i
r
c
h
i
ld
S
em
i
c
onductor Corporat
i
o
n
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
30
V
I
D
= 250 µA, Referenced to
25
o
C
mV /
o
C
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage
Drain Current
23
D
BV
DSS
/
D
T
J
1
µA
µA
nA
nA
I
DSS
V
DS
= 24 V,
V
GS
= 0 V
T
J
= 55
o
C
10
Gate – Body Leakage, Forward
Gate – Body Leakage, Reverse
100
-100
I
GSSF
I
GSSR
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
1
1.6
3
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
I
D
= 250 µA, Referenced to
25
o
C
mV /
o
C
Gate Threshold
VoltageTemp.Coefficient
Static Drain-Source On-Resistance
-4.2
D
V
GS(th)
/
D
T
J
0.023
0.035
0.029
0.027
0.045
0.035
R
DS(ON)
V
GS
= 10 V,
I
D
= 6.3 A
W
T
J
= 125
o
C
V
GS
= 4.5 V,
I
D
= 5.5 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 10 V,
I
D
= 6.3 A
I
D(on)
g
FS
On-State Drain Current
20
A
S
Forward Transconductance
4.5
DYNAMIC CHARACTERISTICS
Input Capacitance
830
185
80
pF
pF
pF
C
iss
C
oss
C
rss
V
DS
= 15 V,
V
GS
= 0 V,
f =
1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
t
r
t
D(off)
t
f
Turn – On Delay Time
Turn – On Rise Time
V
DD
= 15 V,
I
D
= 1 A,
6
12
18
ns
ns
10
V
GS
= 10 V,
R
GEN
= 6
W
Turn – Off Delay Time
Turn – Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
18
5
29
12
13
ns
ns
9
nC
nC
nC
Q
g
Q
gs
Q
gd
V
DS
= 15 V,
I
D
= 6.3 A,
V
GS
= 5 V
2.8
3.1
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Continuous Source Diode Current
Drain-Source Diode Forward Voltage
1.3
1.2
A
V
0.73
V
SD
V
GS
= 0 V,
I
S
= 1.3 A
(Note 2)
Notes:
1. R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
q
JC
is guaranteed by
design while R
q
CA
is determined by the user’s board design.
a. 78
o
C/W when mounted on a minimum
on a 1 in
2
pad of 2oz Cu in FR-4 board.
b. 156
o
C/W when mounted on a minimum pad of 2oz Cu in FR-4 board.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDC
6
55
A
N Rev.C
Typical Electrical Characteristics
25
2
1.5
1
V
G
S
= 10V
6.0V
4.5V
3.5V
20
15
10
5
V
= 3.5V
GS
4.0V
4.5V
3.0V
5.0V
7.0V
10V
2.5V
2
0
0.5
0
1
3
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
, DRAIN CURRENT (A)
D
Fi
g
ure 2. On-Res
i
s
tance
V
a
r
i
a
t
i
o
n w
i
t
h
Fi
g
ure 1. On-Reg
i
o
n Character
i
s
t
i
c
s
.
Drain Current and Gate Voltage
.
0.1
0.08
0.06
0.04
0.02
0
1.6
I
= 6.3 A
I
D
= 3.2A
D
V
= 10 V
GS
1.4
1.2
1
T
A
= 125°C
T
A
= 25°C
0.8
0.6
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
V
, GATE TO SOURCE VOLTAGE (V)
GS
T
, JUNCTION TEMPERATURE (°C)
J
Fi
g
ure 3. On-Res
i
s
tance
V
a
r
i
a
t
i
o
n
Fi
g
ure 4. On-Res
i
s
tance
V
a
r
i
a
t
i
o
n w
i
t
h
Gate-To-Source Vo
l
t
age.
w
i
t
h Temperature
.
20
5
25
20
15
10
5
V
GS
= 0V
T
A
= -55°C
25°C
125°C
V
= 5V
DS
1
0.1
T
= 125°C
A
25°C
-55°C
0.01
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
2
3
4
5
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
, GATE TO SOURCE VOLTAGE (V)
GS
Fi
g
ure 5.
Transfer Character
i
s
t
i
c
s.
Fi
g
ure 6.
B
o
dy Diode For
w
a
r
d Voltage
V
a
r
i
a
t
i
o
n w
i
t
h Source
Current
FDC
6
55
A
N Rev.B
Typical Electrical Characteristics
2000
1000
500
10
V
DS
= 5V
I
D
= 6.3A
10V
C
C
8
6
4
2
0
iss
15V
200
100
50
oss
f = 1 MHz
V
GS
= 0V
C
rss
0.1
0.5
1
2
5
10
30
0
3
6
9
12
15
18
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Q
, GATE CHARGE (nC)
g
Fi
g
ure 7. Gate Charge Character
i
s
t
i
c
s.
Fi
g
ure 8. Capac
i
t
ance Character
i
s
t
i
c
s
.
50
5
20
SINGLE PULSE
4
3
2
1
0
JA
R
q
=156 °C/W
5
T
A
= 25°C
1
0.5
V
GS
= 10V
SINGLE PULSE
R
q
J
A
=156°C/W
T
A
= 25°C
0.1
0.05
0.01
0.1
1
10
100
300
0.01
0.05 0.1
0.2
0.5
1
2
5
10
20 30
50
SINGLE PULSE TIME (SEC)
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
ure 9. Max
i
m
um Safe Operat
i
n
g Area.
Fi
g
ure 10. S
i
n
g
l
e Pul
s
e
M
aximum Po
w
er
Di
s
s
i
p
at
i
o
n.
1
D = 0.5
0.5
R
(t) = r(t)
* R
JA
q
JA
q
R
= 156 °C/W
JA
q
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
t
1
t
2
0.02
T
– T
= P
* R
(t)
JA
0.02
J
A
q
0.01
Duty Cycle, D = t
/ t
1
2
0.01
Single Pulse
0.005
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
t
, TIME (sec)
1
Fi
g
ure 11. Trans
i
e
nt Thermal Response Curve.
Thermal characterization performed using the conditions described in note 1b.
Transient thermal
response will change depending on the circuit board design.
FDC
6
55
A
N Rev.B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOL
T
™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenc
h
â
QFET™
EcoSPARK™
E
2
CMOS
TM
TinyLogic™
QS™
EnSigna
TM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILEN
T
S
WITCHE
R
â
FACT™
FACT Quiet Series™
UltraFE
T
â
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILIT
Y
A
RISING OUT OF THE APPLICATION OR USE O
F
A
NY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICE
S
O
R
S
YSTEM
S
W
ITHOU
T
T
H
E
E
XPRES
S
W
RITTE
N
A
PPROVA
L
O
F
F
AIRCHIL
D
S
EMICONDUCTO
R
C
ORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
