onsemi-FDC658AP-G
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DATA SHEET
+
MOSFET
– Single, P-Channel,
POWERTRENCH
)
, Logic Level
1
TSOT23
CASE 419BL
-30
V
,
–
4 A, 50 m
W
FDC658A
P
,
F
DC658AP-G
D
D
G
1
2
3
6
5
4
D
D
S
General Description
This P
−
Channel Logic Level MOSFET is produced using
onsemi
advanced POWERTRENCH process. It has been optimized for battery
power management applications.
Features
•
Max R
•
Max R
= 50 m
W
@ V
=
−
10
V
, I
=
−
4 A
GS D
DS(on)
MARKING DIAGRAM
= 75 m
W
@ V
=
−
4.5
V
, I
=
−
3.4 A
DS(on)
GS
D
•
Low Gate Charge
.58A M
G
•
High Performance Trench Technology for Extremely Low R
•
Pb
−
Free, Halide Free and RoHS Compliant
DS(on)
G
1
Applications
.58A = Specific Device Code
•
Battery Management
•
Load Switch
•
Battery Protection
•
DC
−
DC Conversion
M
= Date Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
A
†
Device
Package
Shipping
T
= 25
°
C unless otherwise noted.
FDC658AP
TSOT23
(Pb
−
Free/
Halide Free)
3000 /
Symbol
Parameter
Drain
−
Source Voltage
Ratings
−
30
Unit
V
T
a
pe & Reel
V
DS
V
GS
FDC658AP
−
G
TSOT23
(Pb
−
Free/
Halide Free)
3000 /
Gate
−
Source Voltage
25
V
T
a
pe & Reel
I
D
Drain Current
−
Pulsed
A
−
4
−
20
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our
T
a
pe and Reel Packaging Specification
P
D
1.6
0.8
W
T , T
Operating and Storage Junction
T
e
mperature Range
−
55 to +150
°
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance,
78
°
C/W
q
JA
R
Thermal Resistance,
30
°
C/W
q
JC
©
Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
February, 2022
−
Rev. 3
FDC658AP/D
FDC658A
P
,
F
DC658AP
−
G
ELECTRICAL CHARACTERISTICS
T =
25
°
C unless otherwise noted.
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
I
I
=
−
250
m
A, V
= 0 V
−
30
−
−
−
V
DSS
D
GS
Breakdown Voltage
T
e
mperature
Coefficient
=
−
250
m
A,
Referenced to 25
°
C
−
−
22
mV/
°
C
D
BV
DSS
D
T
J
D
I
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
V
= 0
V
, V
=
−
24 V
−
−
−
−
−
1
m
A
DSS
GS
DS
I
=
25
V
, V
= 0 V
100
nA
GSS
GS
DS
V
Gate Threshold Voltage
V
I
= V
,
I =
−
250
m
A
−
1
−
1.8
−
3
V
GS(th)
DS
GS D
Gate Threshold Voltage
T
e
mperature
Coefficient
=
−
250
m
A,
Referenced to 25
°
C
−
4
−
mV/
°
C
D
V
GS(th)
D
T
J
D
R
Static Drain–Source On–Resistance
I
I
I
=
−
4 A, V
=
−
10 V,
−
−
−
44
67
60
50
75
70
m
W
DS(on)
D
D
D
GS
=
−
3.4 A, V
=
−
4.5 V
GS
=
−
4 A, V
=
−
10 V,
GS
T =
125
°
C
J
I
On–State Drain Current
V
DS
V
DS
=
−
5
V
, V
=
−
10 V
−
20
−
−
−
A
S
D(on)
GS
g
FS
Forward Transconductance
=
−
5
V
, I
=
−
4 A
−
8.4
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
=
−
15 V, V
= 0 V,
−
−
−
470
126
61
680
180
90
pF
iss
DS
GS
f = 1 MHz
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
rss
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
T
o
tal Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
=
−
15 V, I
=
−
1 A,
−
−
−
−
−
−
−
7
12
16
6
14
22
29
12
8.1
−
ns
d(on)
DD
GS
D
=
−
10 V, R
= 6
W
GEN
t
r
t
d(off)
t
f
Q
V
DS
V
GS
=
−
15 V, I
=
−
4 A,
6
nC
g
D
=
−
5 V
Q
2.1
2
gs
gd
Q
−
DRAIN
−
SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
I
−
−
−
−
1.3
−
1.2
A
V
S
V
SD
V
GS
−
0.77
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
1. R
is the sum of the junction
−
to
−
case and case
−
to
−
ambient thermal resistance where the case thermal reference is defined as the solder
q
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
q
q
CA
JC
a) 78
°
C/W when mounted on
b) 156
°
C/W when mounted on
a minimum pad of 2 oz. copper.
2
a 1 in
pad of 2 oz. copper.
2. Pulse
T
e
st: Pulse Width < 300
m
s, Duty Cycle < 2.0%
2
FDC658A
P
,
F
DC658AP
−
G
TYPICAL CHARACTERISTICS
2.0
20
−
5.0 V
−
6.0 V
=
−
10 V
−
4.5 V
V
GS
=
−
4.5 V
V
GS
1.8
−
4.0 V
15
−
5.0 V
1.6
−
6.0 V
−
7.0 V
−
3.5 V
10
1.4
1.2
−
8 V
−
10 V
−
3.0 V
5
0
1.0
0.8
0
1
2
3
4
5
0
4
8
12
16
20
−
I ,
Drain Current (A)
D
−
V ,
Drain
−
Source Voltage (V)
DS
Figure 1. On
−
Region Characteristics
Figure 2. Normalized On
−
Resistance vs.
Drain Current and Gate Voltage
0.22
0.18
1.6
1.4
I
V
=
−
4.0 A
I
D
=
−
2.0 A
D
=
−
10 V
GS
0.14
0.10
0.06
0.02
1.2
1.0
0.8
0.6
T =
125
°
C
J
T =
25
°
C
J
−
50
−
25
0
25
50
75
100
125 150
2
4
6
8
10
T ,
Junction Temperature (
5
C)
J
−
V ,
Gate to Source Voltage (V)
GS
Figure 3. Normalized On
−
Resistance vs. Junction
Figure 4. On
−
Resistance vs. Gate to Source
Temperature
Voltage
10
1
15
12
9
V
GS
= 0 V
V
DS
=
−
5 V
125
°
C
25
°
C
T =
−
55
°
C
J
T =
125
°
C
J
0.1
0.01
25
°
C
6
−
55
°
C
3
0.001
0.0001
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
1.2
−
V ,
Body Diode Forward Voltage (V)
SD
−
V ,
Gate to Source Voltage (V)
GS
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
3
FDC658A
P
,
F
DC658AP
−
G
TYPICAL CHARACTERISTICS
(continued)
10
8
600
f = 1 MHz
I
D
=
−
4 A
V
DS
=
−
5 V
−
15 V
V
GS
= 0 V
C
iss
450
300
−
10 V
6
4
C
oss
150
0
2
C
6
rss
0
0
2
4
6
8
10
0
12
18
24
30
Q ,
Gate Charge (nC)
g
−
V ,
Drain to Source Voltage (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
10
8
100
SINGLE PULSE
R
= 156
°
C
q
JA
R
LIMIT
DS(on)
T
A
= 25
°
C
100
m
s
1 ms
10
1
6
4
2
0
10 ms
100 ms
1 s
V
=
−
10 V
GS
0.1
0.01
SINGLE PULSE
= 156
°
C
R
q
JA
DC
T
= 25
°
C
A
0.1
1
10
100
0.01
0.1
1
10
100
−
V ,
Drain
−
Source Voltage (V)
DS
t, Pulse Width (s)
Figure 9. Forward Bias Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
R
(t) = r(t)
×
R
q
JA
q
JA
0.1
R
= 156
°
C/W
0.1
q
JA
0.05
0.02
P
(pk)
t
1
0.01
0.01
t
2
T
−
T =
P
×
R (t)
q
JA
J
A
Duty Cycle, D = t
/ t
1
2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t Rectangular
Pulse Duration (s)
,
Figure 11. Transient Thermal Response Curve
Transient thermal response will change depending on the circuit board design.
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates and/or subsidiaries in
the United States and/or other countries.
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSOT23 6
−
Lead
CASE 419BL
ISSUE A
1
DATE 31 AUG 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
XXX M
G
G
1
XXX =
Specific Device Code
M
= Date Code
G
= Pb
−
Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb
−
Free indicator, “G” or microdot “
G
”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON83292G
TSOT23 6
−
Lead
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2018
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does
onsemi
assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using
onsemi
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provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use
onsemi
products for any such unintended or unauthorized application, Buyer shall indemnify and hold
onsemi
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onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
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TECHNICAL PUBLICATIONS
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