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March 2013
FDD050N03B
N-Channel PowerTrench
MOSFET
30 V, 90 A, 5.0 m
Ω
®
Features
Description
•
•
•
•
R
DS(on)
= 3.7 m
Ω
( Typ.)@ V
GS
= 10
V
,
I
D
= 25 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor
®
’s advance PowerTrench
®
process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Fast Switching Speed
Low Gate Charge, Q
G
= 33 nC( Typ.)
High Performance
Trench Technology for Extremely Low
R
DS(on)
Applications
•
Synchronous Rectification for ATX / Server / Telecom PSU
•
•
High Power and Current Handling Capability
RoHS Compliant
D
D
G
G
D-PAK
S
(TO-252)
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
Parameter
FDD050N03B
Unit
V
Drain to Source Voltage
Gate to Source Voltage
30
±16
V
– Continuous (T
C
= 25
o
C, Silicon Limited)
– Continuous (T
C
= 100
o
C, Silicon Limited)
– Continuous (T
C
= 25
o
C, Package Limited)
90*
I
D
Drain Current
63*
A
50
I
DM
Drain Current
– Pulsed
(Note 1)
(Note 2)
(Note 3)
360
A
mJ
E
AS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
72
2
V/ns
W
W/
o
C
o
C
(T
C
= 25
o
C)
– Derate above 25
o
C
65
P
D
Power Dissipation
0.43
-55 to +175
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
Maximum Lead
T
e
mperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
o
C
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A.
Thermal Characteristics
Symbol
R
θ
JC
R
θ
JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD050N03B
Unit
2.3
40
o
C/W
(Note 5)
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD050N03B
FDD050N03B
D-PAK
330mm
16mm
2500
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V, T
C
= 25
o
C
30
–
–
–
–
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, Referenced to 25
o
C
13
mV/
o
C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
DS
= 24V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
–
–
–
–
1
μ
A
±100
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
1.25
2.0
3.7
5.2
169
3.0
5.0
8.1
–
V
m
Ω
S
V
GS
= 10V, I
D
= 25A
–
–
–
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 4.5V, I
D
= 15A
V
DS
= 5V, I
D
= 50A
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
2160
805
85
2875
pF
pF
pF
nC
nC
nC
nC
V
DS
= 15V, V
GS
= 0V
f = 1MHz
C
oss
C
rss
Q
g(tot)
Q
gs
Output Capacitance
1070
Reverse Transfer Capacitance
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
130
33
43
–
V
V
DD
= 15V, I
D
= 50A
GS
= 10V
7.8
3.8
4.6
Q
gs2
Q
gd
–
(Note 4)
–
–
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
14.5
4.5
30
39
18
70
19
ns
ns
ns
ns
V
V
DD
= 15V, I
D
= 50A
GS
= 10V, R
GEN
= 4.7
Ω
(Note 4)
4.5
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
90*
360
1.3
–
A
A
I
SM
V
SD
t
rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0V, I
SD
= 50A
–
V
33
19
ns
nC
V
GS
= 0V, I
SD
= 50A
dI
F
/dt = 100A/
μ
s
Q
rr
Reverse Recovery Charge
–
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, I
= 12A, V
= 27V, R
= 25
Ω
, Starting T
= 25
°
C
AS
DD
G
J
3. I
≤
50A, di/dt
≤
200A/
μ
s, V
≤
BV
, Starting T
= 25
°
C
SD
DD
DSS
J
4. Essentially Independent of Operating
T
e
mperature Typical Characteristics
2
5. When mounted on a 1 in
pad of 2 oz copper
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
300
1000
V
GS
=
15.0 V
*Notes:
10.0 V
8.0 V
7.0 V
6.0 V
1. V
DS
= 20V
100
2. 250
μ
s Pulse Test
175
o
C
5.0 V
100
25
o
C
4.5 V
4.0 V
3.5 V
3.0 V
10
-55
o
C
10
1
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
0.1
1
0.01
1
2
3
4
5
0.1
1
4
V
GS
, Gate-Source Voltage[V]
V
DS
, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
10
500
*Notes: T
C
= 25
o
C
9
100
8
175
o
C
7
V
GS
= 4.5V
25
o
C
6
10
5
V
GS
= 10V
*Notes:
1. V
GS
= 0V
4
3
2. 250
μ
s Pulse Test
1
0.2
0
50
100
150
200
250
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
4000
C
C
C
= C
+ C
(
C =
shorted
)
gs gd
ds
iss
V
DS
= 6V
= C
+ C
ds gd
oss
rss
V
DS
= 15V
= C
gd
8
6
4
2
0
V
DS
= 24V
3000
2000
1000
0
C
oss
C
iss
*Notes:
1. V
GS
= 0V
2. f = 1MHz
C
rss
*Notes: I
D
= 50A
25 30 35
0
5
10
15
20
0.1
1
10
30
Q
g
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
0.5
*Notes:
1. V
GS
= 0V
*Notes:
1. V
GS
= 10V
2. I
D
= 10mA
2. I
D
= 25A
0.0
-100
0.8
-100
-50
0
50
100
150 200
-50
0
50
100
150
200
T
J
, Junction Temperature
[
o
C
]
T
J
, Junction Temperature
[
o
C
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
400
100
100
80
100
μ
s
1ms
60
10
Operation in This Area
10ms
100ms
DC
is Limited by R
DS(on)
40
Limited by Package
1
*Notes:
1. T
C
= 25
o
C
20
2. T
J
= 175
o
C
R
θ
JC
= 2.3
o
C/W
3. Single Pulse
0.1
0.1
0
1
10
50
25
50
75
100
125
150
175
T
C
, Case Temperature
[
o
C
]
V
DS
, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
4
1
0.5
0.2
0.1
P
DM
0.05
t
1
t
2
0.1
0.02
0.01
*Notes:
1. Z
θ
JC
(t) = 2.9
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
Single pulse
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
10
2
Rectangular Pulse Duration [sec]
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
6
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
7
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
FPS™
Sync-Lock™
®*
®
tm
AccuPower™
F-PFS™
AX-CAP
®
*
FRFET
®
PowerTrench
®
PowerXS™
BitSiC™
Global Power Resource
SM
Green Bridge™
Green FPS™
Green FPS™ e-Series™
G
max
™
TinyBoost™
TinyBuck™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
Current Transfer Logic™
DEUXPEED
®
Dual Cool™
EcoSPARK
®
EfficentMax™
ESBC™
Programmable Active Droop™
QFET
®
TinyCalc™
QS™
TinyLogic
®
Quiet Series™
RapidConfigure™
™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
Saving our world, 1mW/W/kW at a time™
TranSiC
®
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
®
TriFault Detect™
TRUECURRENT
®
*
μ
SerDes™
®
MicroPak™
Fairchild
®
MicroPak2™
MillerDrive™
MotionMax™
mWSaver™
STEALTH™
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
SuperFET
®
Fairchild Semiconductor
®
FACT Quiet Series™
FACT
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
®
FAST
®
FastvCore™
FETBench™
OptoHiT™
OPTOLOGIC
®
OPTOPLANAR
®
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
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Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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