onsemi-FDD2670
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FDD2670
200V N-Channel PowerTrench
MOSFET
General Description
Features
This
N-Channel
MOSFET has been designed
•
3.6 A, 200 V.
R
DS(ON)
= 130 m
Ω
@ V
GS
= 10 V
•
Low gate
charge
specifically to improve t he overall efficiency of
DC/DC
converters using either synchronous
or conventional
switching PWM controllers.
•
Fas t switching speed
These MOSFET
‘
s feature faster switching
and lower
gate charge
than other MOSFET
‘
s with
comparable
RDS
(ON)
specifications.
•
High performance trench technology for extremely
low R
DS(ON)
The result is a MOSFET that is easy and safer to drive
(even at
very high frequencies),
and DC/DC power
supply designs with higher overall efficiency.
•
High power and current handling capability
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
V
200
V
GSS
I
D
Gate-Source Voltage
V
A
±
20
Drain Current
– Continuous
Drain Current
– Pulsed
(Note 1)
3.6
20
70
P
D
W
Maximum Power Dissipation @ T
C
= 25
°
C
(Note 1)
(Note 1a)
(Note 1b)
(Note 3)
3.2
@
T
A
= 25
°
C
T
A
= 25
°
C
1.3
@
dv/dt
Peak Diode Recovery dv/dt
3.2
V/ns
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 1)
1.8
96
R
θ
JC
°
C/W
°
C/W
(Note 1b)
R
θ
JA
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD2670
FDD2670
13’’
16mm
2500 units
Publication Order Number
:
2001
Semiconductor Components Industries, LLC.
FDD2670/D
November-2017, Rev. 2
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 1)
W
DSS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current
V
DD
= 100 V,
I
D
= 3.6 A
375
3.6
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
200
V
V
GS
= 0 V, I
D
= 250
µ
A
Breakdown Voltage Temperature
Coefficient
214
∆
BV
DSS
∆
T
J
I
D
= 250
µ
A, Referenced to 25
°
C
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
V
V
DS
= 160 V,
V
GS
= 0 V
GS
= 20 V,
V
DS
= 0 V
GS
= –20 V,
V
DS
= 0 V
1
µ
A
NA
NA
I
GSSF
I
GSSR
100
–100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
2
4
4.5
V
V
DS
= V
GS
, I
D
= 250
µ
A
Gate Threshold Voltage
Temperature Coefficient
-10
∆
V
GS(th)
∆
T
J
I
D
= 250
µ
A, Referenced to 25
°
C
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V,
V
GS
= 10 V, I
D
= 3.6 A T
J
= 125
°
C
I
D
= 3.6 A
100
205
130
275
m
Ω
I
D(on)
g
FS
On–State Drain Current
V
GS
= 10 V,
V
DS
= 5 V,
V
DS
= 5 V
I
D
= 3.6 A
20
A
S
Forward Transconductance
15
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
1228
112
17
PF
PF
pF
V
DS
= 100 V,
f = 1.0 MHz
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
13
8
23
16
48
40
43
ns
ns
V
DD
= 100 V,
I
D
= 1 A,
R
GEN
= 6
Ω
V
GS
= 10 V,
30
25
27
7
ns
ns
Q
g
Q
gs
Q
gd
nC
nC
nC
V
DS
= 100 V,
V
GS
= 10 V
I
D
= 3.6 A,
10
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
2.1
1.2
A
V
Drain–Source Diode Forward
V
SD
V
GS
= 0 V,
I
S
= 2.1 A
(Note 2)
0.7
Voltage
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user’s board design.
o
o
a) R
θ
JA
= 40
C/W when
b) R
θ
JA
= 96
C/W on a
2
minimum mounting pad.
mounted on a 1in
pad of
2oz copper.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
3.
I
SD
≤
3A, di/dt
≤
100A/
µ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
2
Typical Characteristics
1.6
1.4
1.2
1
20
V
GS
= 10V
6.5V
V
GS
= 5.5V
15
10
5
6.0V
6.0V
6.5V
10.0V
5.5V
0.8
0
0
4
8
12
16
20
0
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.3
0.2
0.1
0
2.5
I
D
= 3.6A
GS
= 10V
I
D
= 1.8 A
V
2
1.5
1
T
A
= 125
o
C
T
A
= 25
o
C
0.5
0
-50
-25
0
25
50
75
100
125
150
4
5
6
7
8
9
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
24
18
12
6
V
GS
= 0V
V
DS
= 15V
T
A
= 125
o
C
10
1
25
o
C
-55
o
C
T
A
= 125
o
C
0.1
25
o
C
-55
o
C
0.01
0.001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
3
4
5
6
7
8
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
Typical Characteristics
15
2000
1500
1000
500
0
I
D
= 3.6 A
V
DS
= 40V
f = 1MHz
V
GS
= 0 V
70
12
9
100 V
C
ISS
6
3
C
OSS
C
RSS
0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
40
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
100
80
60
40
20
0
100
µ
s
SINGLE PULSE
R
θ
JA
= 96°C/W
R
DS(ON)
LIMIT
10
1
10ms
100ms
1s
T
A
= 25°C
10s
DC
0.1
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 96°C/W
0.2
0.1
P(pk)
0.1
t
1
0.05
0.02
t
2
T
J
– T
A
= P * R
θ
JA
(t)
0.01
SINGLE PULSE
0.01
Duty Cycle, D = t
1
/ t
2
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
4
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