onsemi-FDD3672-F085
| Part # | onsemi-FDD3672-F085 |
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March 2011
FDD3672_F085
N-Channel UltraFET Trench MOSFET
100V, 44A, 28m
Ω
Applications
Features
DC/DC converters and Off-Line UPS
Typ r
DS(on)
= 24m
Ω
at V
GS
= 10V, I
D
= 44A
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Typ Q
g(10)
= 24nC at V
GS
= 10V
Low Miller Charge
Low Q
rr
Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
FDD3672_F085 Rev. C
1
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
Parameter
Ratings
100
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
V
GS
±20
Drain Current Continuous (T
C
< 30
o
C, V
GS
= 10V)
44
I
D
A
Pulsed
See Figure 4
73
E
AS
P
D
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25
o
C
(Note 1)
mJ
W
W/
o
C
o
C
144
0.96
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to +175
Thermal Characteristics
R
θ
JC
R
θ
JA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-263,1in
2
copper
pad area
1.04
52
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
2500 units
FDD3672
FDD3672_F085
TO-252AA
330mm
16mm
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
100
–
–
–
–
–
1
V
V
DS
= 80V, V
GS
= 0V
T
J
= 150
o
C
–
–
–
μ
A
nA
250
±100
I
GSS
V
GS
= ±20V
On Characteristics
V
GS(th)
r
DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250
μ
A
D
= 44A, V
GS
= 10V
2
–
3
4
V
Ω
Ω
Ω
I
0.024
0.028
0.063
0.028
0.047
0.074
I
D
= 21A, V
GS
= 6
V
,
–
I
D
= 44A, V
GS
= 10
V
,
T
J
= 175°C
–
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
1635
240
60
–
–
pF
pF
pF
nC
nC
nC
nC
nC
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge at 10V
Threshold Gate Charge
–
Q
g(TOT)
Q
g(TH)
Q
gs
V
GS
= 0 to 10V
24
36
4.5
–
V
GS
= 0 to 2V
3
V
I
DD
= 50V
D
= 44A
I
g
= 1.0mA
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
8.3
5.3
5.8
Q
gs2
Q
gd
–
–
FDD3672_F085 Rev. C
2
Electrical Characteristics
T
J
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t
on
t
d(on)
t
r
Turn-On Time
–
–
–
–
–
–
–
78
–
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
12
37
24
44
–
–
V
V
DD
= 50V, I
D
= 44A,
GS
= 10V, R
GS
= 11
Ω
t
d(off)
t
f
–
–
t
off
70
Drain-Source Diode Characteristics
I
SD
= 44A
–
–
–
–
0.9
0.8
44
1.25
1.0
57
V
V
V
SD
Source to Drain Diode Voltage
I
SD
= 21A
t
rr
Reverse Recovery Time
ns
nC
I
F
= 44A, dI
SD
/dt = 100A/
μ
s
Q
rr
Reverse Recovery Charge
58
76
Notes:
o
1:
Starting T
= 25
C, L = 0.2mH, I
= 27A
J
AS
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
For
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDD3672_F085 Rev. C
3
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
0
CURRENT LIMITED
BY PACKAGE
V
GS
= 10V
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE
(
o
C
)
T
C
, CASE TEMPERATURE
(
o
C
)
Figure 2.
Maximum Continuous Drain Current vs
Case Temperature
Figure 1.
Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE – DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t
/t
1
2
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JA
θ
JA C
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 3.
Normalized Maximum Transient Thermal Impedance
1000
100
10
T
C
= 25
o
C
V
GS
= 10V
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 – T
C
I = I
2
150
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION(s)
Figure 4.
Peak Current Capability
FDD3672_F085 Rev. C
4
Typical Characteristics
100
10
1
200
100
If R = 0
= (L)(I
)/(1.3*RATED BV
t
AV
– V
)
AS
DSS
DD
If R
AV
≠
0
t
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
DSS DD
AS
100us
10
STARTING T
J
= 25
o
C
SINGLE PULSE
T
J
= MAX RATED
o
T
C
= 25
C
1
1ms
STARTING T
J
= 150
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
10ms
DC
0.1
0.001
0.01
0.1
1
10
100
1
10
100
300
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6.
Unclamped Inductive Switching
Capability
Figure 5.
Forward Bias Safe Operating Area
80
80
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
DD
= 5V
60
60
40
20
0
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
40
20
0
T
J
= 25
o
C
T
J
= 175
o
C
T
J
= -55
o
C
0
1
2
3
4
5
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7.
Transfer Characteristics
Figure 8.
Saturation Characteristics
100
80
60
40
20
0
3.0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
=
44A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
0.6
T
J
= 175
o
C
T
J
= 25
o
C
I
D
= 44A
V
GS
= 10V
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
o
T
J
, JUNCTION TEMPERATURE
(
C
)
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
Figure 9.
Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10.
Normalized Drain to Source On
Resistance vs Junction Temperature
FDD3672_F085 Rev. C
5
Typical Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
1.15
1.10
1.05
1.00
0.95
0.90
0.85
V
GS
=
V
DS
I
D
= 5mA
I
D
= 250
μ
A
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE
(
o
C
)
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 11.
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12.
Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
10000
I
D
= 44A
V
DD
= 50
V
8
C
iss
V
DD
= 40
V
1000
V
DD
= 60V
6
C
oss
4
2
0
100
f = 1MHz
V
GS
= 0V
C
rss
10
0.1
0
5
10
15
20
25
1
10
80
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Q
g
,
GATE CHARGE(nC)
Figure 13.
Capacitance vs Drain to Source
Voltage
Figure 14.
Gate Charge vs Gate to Source Voltage
FDD3672_F085 Rev. C
6
