onsemi-FDD3860
| Part # | onsemi-FDD3860 |
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FDD3860
N-Channel PowerTrench
®
MOSFET
100 V, 29 A, 36 m
Ω
Features
General Description
Max r
DS(on)
= 36 m
Ω
at V
GS
= 10 V, I
D
= 5.9 A
This N-Channel MOSFET is rugged gate version of
ON
Semiconductor‘s advanced Power Trench
®
process. This part is
tailored for low r
DS(on)
and low Qg figure of merit, with avalanche
High Performance Trench Technology for Extremely Low
r
DS(on)
ruggedness for a wide range of switching applications.
100% UIL
T
e
sted
RoHS Compliant
Applications
DC-AC Conversion
Synchronous Rectifier
D
D
G
G
S
D-PAK
(TO-252)
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted.
Symbol
V
DS
V
GS
Parameter
Ratings
100
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
V
V
±20
T
C
= 25°C
T
A
= 25°C
29
I
D
(Note 1a)
(Note 3)
6.2
A
-Pulsed
60
E
AS
Single Pulse Avalanche Energy
Power Dissipation
121
mJ
W
T
C
= 25°C
T
A
= 25°C
83
P
D
Power Dissipation
(Note 1a)
3.75
-55 to +175
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.8
40
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
16 mm
Quantity
FDD3860
FDD3860
D-PAK (TO-252)
2500 units
1
©2008
Semiconductor Components Industries, LLC.
October-2017,
Rev.
2
Publication Order Number:
FDD3860/D
Electrical Characteristics
T
J
= 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
100
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25°C
98
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 80V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
1
μ
A
±100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
2.5
3.8
4.5
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25°C
-11.4
mV/°C
V
GS
= 10V, I
D
= 5.9A
29
51
20
36
64
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
m
Ω
V
GS
= 10V, I
D
= 5.9A, T
J
= 125°C
V
DS
= 10V, I
D
= 5.9A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1310
100
45
1740
130
70
pF
pF
pF
Ω
V
DS
= 50V, V
GS
= 0V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
f = 1MHz
1.6
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
16
10
24
7
29
21
39
15
31
ns
ns
V
DD
= 50
V
,
I
D
= 5.9A,
V
GS
= 10V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
ns
ns
Q
g
T
o
tal Gate Charge at 10V
Gate to Source Charge
Gate to Drain “Miller” Charge
22
7.1
6.3
nC
nC
nC
V
DD
= 50
V
,
I
D
= 5.9A
Q
gs
Q
gd
Drain-Source Diode Characteristics
V
GS
= 0V, I
S
= 2.0A
(Note 2)
(Note 2)
0.7
0.8
34
1.2
1.3
55
V
SD
Source to Drain Diode
Forward Voltage
V
V
GS
= 0V, I
S
= 5.9A
t
rr
Reverse Recovery Time
ns
I
F
= 5.9A, di/dt = 100A/
μ
s
Q
rr
Reverse Recovery Charge
40
64
nC
Notes
:
1:
R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θ
JA
θ
JC
is guaranteed by design while
R
is determined by the user’s board design.
θ
JA
a)
40°C/W when mounted
on a
1 in
pad of
2 oz
copper
b) 96°C/W
when mounted
on a
minimum pad.
2
2:
Pulse
T
e
st: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3:
Starting T
= 25
°
C, L = 3mH, I
= 9A, V
= 100V, V
= 10V.
J
AS
DD
GS
2
Typical Characteristics
T
J
= 25°C unless otherwise noted.
3.0
2.5
2.0
1.5
1.0
0.5
60
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
V
= 10V
= 8V
GS
50
40
30
20
10
0
V
GS
= 6V
GS
V
= 7V
GS
V
GS
= 7V
V
GS
= 8V
V
GS
= 10V
V
= 6V
GS
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs. Drain Current and Gate Voltage
100
80
60
40
20
0
2.2
PULSE DURATION = 80
μ
s
I
D
= 5.9A
I
D
= 5.9A
GS
= 10V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
DUTY CYCLE = 0.5%MAX
V
T
J
= 125
o
C
T
J
= 25
o
C
5
6
7
8
9
10
-75 -50 -25
0
25 50 75
100 125 150
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs. Junction Temperature
Figur
e
4
. On-Resistance
vs. Gate to
Source Voltage
60
PULSE DURATION = 80
μ
s
100
DUTY CYCLE = 0.5%MAX
V
GS
= 0V
50
V
DS
= 10V
40
10
T
J
= 150
o
C
1
30
T
J
= 150
o
C
T
J
= 25
o
C
20
0.1
0.01
1E-3
T
J
= 25
o
C
T
J
= -55
o
C
10
T
J
= -55
o
C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs. Source Current
3
Typical Characteristics
T
J
= 25°C unless otherwise noted.
10
3000
1000
I
D
= 5.9A
V
DD
= 25V
C
iss
8
6
4
2
0
V
DD
= 75V
V
DD
= 50V
C
oss
100
10
C
rss
f = 1MHz
= 0V
V
GS
0
5
10
15
20
25
0.1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s .
D r a i n
to Source Voltage
10
8
35
28
21
14
7
6
4
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
R
θ
JC
= 1.8
o
C/W
2
1
0.01
0
25
50
75
100
125
150
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
T
C
,
CASE TEMPERATURE
(
o
C
)
Figur
e
9. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs.
Case Temperature
10
5
100
10
1
V
GS
= 10V
10
4
SINGLE PULSE
R
θ
JC
= 1.8
o
C/W
100us
10
3
1ms
SINGLE PULSE
T
J
= MAX RATED
10
2
THIS AREA IS
LIMITED BY r
ds(on)
10ms
DC
R
θ
JC
= 1.8
o
C/W
T
C
=
25
o
C
10
0.1
0.1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
1
10
100
300
t, PULSE WIDTH (sec)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figure 12.
Single Pulse
Maximum Power Dissipation
4
Typical Characteristics
T
J
= 25°C unless otherwise noted.
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
FOR
ABO
0.1
0.05
0.1
P
DM
CURR
0.02
0.01
I = I
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
R
θ
JC
= 1.8
o
C/W
1
2
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JC
θ
JC
C
0.001
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13.
Transient Thermal Response Curve
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
t
0.01
0.001
2
SINGLE PULSE
R
θ
JA
= 40
o
C/W
(
Note 1a
)
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T
= P
J
x Z
x R
+ T
θ
JA
A
DM
θ
JA
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 14.
Transient Thermal Response Curve
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.01
0.1
P
0.05
0.02
0.01
DM
t
1
t
2
SINGLE PULSE
R
θ
JA
= 96
o
C/W
(
Note 1b
)
0.001
0.0001
NOTES:
DUTY FACTOR: D = t
/t
1
2
PEAK T
= P
J
x Z
x R
+ T
θ
JA
A
DM
θ
JA
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 15.
Transient Thermal Response Curve
5
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