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April 2015
FDD390N15A
®
N-Channel PowerTrench
MOSFET
150 V, 26 A, 40 m
Features
Description
•
•
•
•
R
DS(on)
= 33.5 m
( Typ.)@ V
GS
= 10 V, I
D
= 26 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process that has
been tailored to minimize the on-state resistance while maintain-
ing superior switching performance.
Fast Switching Speed
Low Gate Charge, Q
G
= 14.3 nC( Typ.)
High Performance Trench Technology for Extremely Low
R
DS(on)
Applications
•
•
High Power and Current Handling Capability
RoHS Compliant
•
•
•
•
•
Consumer Appliances
LED TV
Synchronous Rectification
Uninterruptible Power Supply
Micro Solar Inverter
D
D
G
G
D-PAK
S
S
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
FDD390N15A
Unit
Drain to Source Voltage
Gate to Source Voltage
150
±20
V
– DC
– AC
V
GSS
I
D
V
A
(f > 1 Hz)
±30
– Continuous (T
C
= 25
o
C,Silicon Limited)
– Continuous (T
C
= 100
o
C,Silicon Limited)
26
Drain Current
17
I
DM
Drain Current
– Pulsed
(Note 1)
104
A
mJ
E
AS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 3)
78
6.0
V/ns
W
W/
o
C
o
C
(T
C
= 25
o
C)
– Derate above 25
o
C
63
P
D
Power Dissipation
0.5
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
-55 to +150
Maximum Lead
T
e
mperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
o
C
Thermal Characteristics
Symbol
Parameter
Unit
FDD390N15A
R
JC
R
JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2.0
87
o
C/W
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDD390N15A
FDD390N15A
DPAK
T
a
pe and Reel
330 mm
16 mm
2500 units
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
A, V
GS
= 0 V
D
= 250
A, Referenced to 25
o
C
DS
= 120 V, V
GS
= 0 V
150
–
–
–
–
V
BV
DSS
/
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
0.1
V/
o
C
V
–
–
–
–
1
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
A
V
DS
= 120 V, T
C
= 125
o
C
–
500
±100
V
GS
= ±20 V, V
DS
= 0 V
–
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250
A
V
GS
= 10 V, I
D
= 26 A
V
DS
= 10
V
,
I
D
= 26 A
2.0
–
–
33.5
33
4.0
40
–
V
m
S
Static Drain to Source On Resistance
Forward Transconductance
–
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
965
96
1285
pF
pF
pF
pF
nC
nC
nC
nC
V
DS
= 75 V, V
GS
= 0 V
f = 1 MHz
C
oss
C
rss
Output Capacitance
130
Reverse Transfer Capacitance
Energy Related Output Capacitance
T
o
tal Gate Charge at 10V
5.8
169
14.3
5.0
2.0
3.5
1.4
–
C
oss(er)
Q
g(tot)
Q
gs
V
DS
= 75 V, V
GS
= 0 V
–
–
18.6
V
DS
= 75 V, I
D
= 27 A
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
–
–
–
–
V
GS
= 10 V
Q
gs2
Q
gd
–
–
–
(Note 4)
ESR
f = 1 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
14
10
20
5
38
30
50
20
ns
ns
ns
ns
V
DD
= 75 V, I
D
= 27 A
V
GS
= 10 V, R
GEN
= 4.7
(Note 4)
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
26
104
1.25
–
A
A
I
SM
V
SD
t
rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 26 A
–
V
63
131
ns
nC
V
GS
= 0 V, I
SD
= 27 A, V
DD
= 75 V
dI
F
/dt = 100 A/
s
Q
rr
Reverse Recovery Charge
–
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting T
= 25
C, L
= 3 mH, I
= 7.2 A
J
SD
3. I
26 A, di/dt
200 A/
s, V
BV
, Starting T
= 25
C
J
SD
DD
DSS
4. Essentially Independent of Operating
T
e
mperature Typical Characteristics
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
200
200
*Notes:
V
GS
= 15.0V
1. V
DS
= 10V
10.0V
100
100
2. 250
s Pulse Test
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10
10
25
o
C
150
o
C
-55
o
C
*Notes:
1. 250
s Pulse Test
2. T
C
= 25
o
C
1
1
0.1
2
3
4
5
6
7
8
1
5
V
GS
, Gate-Source Voltage[V]
V
DS
, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
200
80
60
40
20
100
25
o
C
150
o
C
10
V
GS
= 10V
V
GS
= 20V
*Notes:
1. V
GS
= 0V
*Note: T
C
= 25
o
C
2. 250
s Pulse Test
1
0.4
0.6
0.8
1.0
1.2 1.3
0
20
40
60
80
V
SD
, Body Diode Forward Voltage [V]
I
D
, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2000
10
1000
C
iss
V
DS
= 30V
DS
= 75V
DS
= 120V
8
V
V
100
6
4
2
0
C
oss
*Note:
1. V
GS
= 0V
10
2. f = 1MHz
C
rss
C
C
C
= C
+ C
(
C =
shorted
)
gs gd
ds
iss
= C
+ C
ds
oss
rss
gd
= C
gd
*Note: I
D
= 27A
12
1
0.1
1
10
100 200
0
4
8
16
V
DS
, Drain-Source Voltage [V]
Q
g
, Total Gate Charge [nC]
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
1.10
2.6
2.4
1.08
1.04
1.00
2.0
1.6
1.2
0.96
*Notes:
1. V
GS
= 0V
*Notes:
1. V
GS
= 10V
0.8
2. I
D
= 250
A
2. I
D
= 26A
0.92
0.4
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
o
o
T
J
, Junction Temperature
[
C
]
T
J
, Junction Temperature
[
C
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
300
30
V
GS
= 10V
100
25
20
15
10
5
10
s
10
100
s
Operation in This Area
is Limited by R
DS(on)
1
0.1
1ms
3ms
DC
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
R
JC
= 2.0
o
C/W
3. Single Pulse
0.01
0
25
1
10
100 200
50
75
100
125
150
o
T
C
, Case Temperature
[
C
]
V
DS
, Drain-Source Voltage [V]
Figure 11. Eoss vs. Drain to Source Voltage
Figure 12. Unclamped Inductive
Switching Capability
1.2
1.0
0.8
0.6
0.4
0.2
0.0
12
If R = 0
10
t
AV
= (L)
(
I
AS
)
/
(
1.3*RATED BV
DSS
-V
DD
If R = 0
t
AV
= (L/R)In
[
(
I
AS
*R
)
/
(
1.3*RATED BV
DSS
-V
DD
)
+1
]
)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
1
0
30
60
90
120
150
0.01
0.1
1
10 20
V
DS
, Drain to Source Voltage
[
V
]
t
AV
, TIME IN AVALANCHE (ms)
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
4
Typical Performance Characteristics
(Continued)
Figure 13. Transient Thermal Response Curve
3
1
0.5
0.2
P
DM
0.1
t
1
0.05
t
2
0.1
0.02
0.01
*Notes:
Single pulse
1. Z
JC
(t) = 2.0
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
JC
(t)
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
5
I
= const.
G
Figure 14. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 15. Resistive Switching Test Circuit & Waveforms
V
GS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
6
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDD390N15A Rev. 1.1
7
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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