onsemi-FDD4243-F085
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FDD4243
–
F085
®
P-Channel PowerTrench
MOSFET
-40V, -14A, 64m
Ω
Features
Applications
Inverter
Typ r
DS(on)
= 36m
at V
GS
= -10V, I
D
= -6.7A
Typ r
DS(on)
= 48m
at V
GS
= -4.5V, I
D
= -5.5A
Typ Q
g(TOT)
= 21nC at V
GS
= -10V
Power Supplies
High performance trench technology for extremely low
r
DS(on)
RoHS Compliant
Qualified to AEC Q101
©2010
Semiconductor Components Industries, LLC.
September-2017,
Rev.
2
Publication Order Number:
FDD4243-F085/D
1
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
-40
±20
V
V
V
GS
Drain Current Continuous (T
C
< 130
o
C, V
GS
= 10V)
-14
I
D
A
Pulsed
See Figure 4
84
E
AS
P
D
Single Pulse Avalanche Energe
Power Dissipation
Dreate above 25
o
C
(Note 1)
mJ
W
W/
o
C
o
C
50
0.34
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to +175
Thermal Characteristics
R
JC
R
JA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
3
o
C/W
o
C/W
40
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12mm
Quantity
2500 units
FDD4243
FDD4243
–
F085
TO252
13”
Note:
1.
A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as
ON Semiconductor
has officially announced
in Aug 2014.
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= -250
A, V
GS
= 0V
-40
–
–
–
–
V
Breakdown Voltage Temperature
Coefficient
BV
DSS
T
J
ID = -250
μ
A, referenced to 25°C
-32
mV/°C
–
–
–
–
–
-1
V
DS
= -32V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
A
T
J
= 125
o
C
-100
±100
V
GS
= ±20V
–
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= -250
A
-1.4
–
-1.6
4.7
-3.0
–
V
V
GS(th)
Gate to Source Threshold Voltage
ID = –250
μ
A, referenced to 25°C
mV/°C
T
J
r
DS(on)
g
FS
T
e
mperature Coefficient
I
D
= -6.7A, V
GS
= -10V
–
–
36
48
57
44
64
70
I
D
= -5.5A, V
GS
= -4.5V
Drain to Source On Resistance
Forward Transconductance
m
I
D
= -6.7A, V
GS
= -10V,
T
J
= 150
o
C
–
–
I
D
= –6.7A, V
DS
= –5V,
23
–
S
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
1165
165
90
1550
220
135
–
pF
pF
pF
V
DS
= -20V, V
GS
= 0V,
f = 1MHz
C
oss
C
rss
R
G
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
4
Q
g(TOT)
Q
gs
T
o
tal Gate Charge
21
29
–
nC
nC
V
DD
= -20V, V
GS
= -10V
I
D
= -6.7A
Gate to Source Gate Charge
3.4
Q
gd
Gate to Drain “Miller“ Charge
–
4
–
nC
2
Electrical Characteristics
T
J
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
–
–
–
–
6
15
22
7
12
26
35
14
ns
ns
ns
ns
V
DD
= -20V, I
D
= -6.7A
V
GS
= -10V, R
GEN
= 6
Turn-Off Delay Time
Fall Time
Drain-Source Diode Characteristics
V
SD
t
rr
Source to Drain Diode Voltage
Reverse Recovery Time
I
SD
= -6.7A, V
GS
=0V
–
–
–
-0.86
29
-1.2
43
V
ns
nC
I
SD
= -6.7A, dI
SD
/dt = 100A/
s
Q
rr
Reverse Recovery Charge
30
44
Note:
2.
Starting T = 25°C, L = 3mH, I
= 7.5A, V
= 10V, V
= 40V during the inductor charging time and 0V during the time in avalanche.
J
AS
GS
DD
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
For
All
ON
Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
3
Typical Characteristics
30
20
10
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY PACKAGE
V
GS
= -10V
V
= -4.5V
GS
R
JC
= 3
o
C/W
50
25
75
100
125
150
175
0
25
50
75
100
125
o
150
175
o
T
C
, CASE TEMPERATURE
(
C
)
T
C
, CASE TEMPERATURE
(
C
)
Figure 2.
Maximum Continuous Drain Current vs
Case Temperature
Figure 1.
Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE – DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
P
DM
t
1
t
SINGLE PULSE
2
NOTES:
DUTY FACTOR: D = t
/t
1
2
PEAK T
= P
x Z
x R
+ T
J
DM
JA
JA A
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 3.
Normalized Maximum Transient Thermal Impedance
1000
T
C
= 25
o
C
FOR TEMPERATURES
V
GS
= 10V
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 – T
C
I = I
25
150
100
SINGLE PULSE
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION(s)
Figure 4.
Peak Current Capability
4
Typical Characteristics
40
10
300
100
If R = 0
= (L)(I
)/(1.3*RATED BV
t
AV
– V
)
AS
DSS
DD
If R
0
t
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
DD
AV
AS
DSS
100us
10
1
STARTING T
J
= 25
o
C
1ms
10ms
DC
STARTING T
J
= 150
o
C
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
T
J
= MAX RATED
o
T
C
= 25
C
1
0.1
1
0.1
1
10
100
1
10
90
t
AV
, TIME IN AVALANCHE (ms)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to
ON Semiconductor
Application Notes AN7514
and AN7515
Figure 5.
Forward Bias Safe Operating Area
Figure 6.
Unclamped Inductive Switching
Capability
60
60
PULSE DURATION = 80
s
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
50
50
T
J
= -55
o
C
V
DD
= -5V
V
GS
= -10V
40
40
V
GS
= -6V
V
GS
= -4.5V
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= -5V
30
30
20
V
GS
= -4V
20
10
V
GS
= -3V
10
0
0
0
1
2
3
4
0
1
2
3
4
5
6
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7.
Transfer Characteristics
Figure 8.
Saturation Characteristics
200
2.0
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
I
D
=
-6.7A
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
180
160
140
120
100
80
1.8
1.6
1.4
1.2
1.0
0.8
0.6
T
J
= 175
o
C
60
T
J
= 25
o
C
I
D
= -6.7A
40
V
GS
= -10V
20
2
4
6
8
10
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE
(
o
C
)
-V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
Figure 9.
Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10.
Normalized Drain to Source On
Resistance vs Junction Temperature
5
Typical Characteristics
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.15
1.10
1.05
1.00
0.95
0.90
V
GS
=
V
DS
I
D
= -250
A
I
D
= -250
A
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T
J
, JUNCTION TEMPERATURE
(
C
)
T
J
, JUNCTION TEMPERATURE
(
C
)
Figure 11.
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12.
Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10
5000
V
DD
= -10V
C
iss
8
6
4
2
0
1000
V
DD
= -20V
V
DD
= -30V
C
oss
100
C
rss
f = 1MHz
V
GS
= 0V
10
0.1
0
4
8
12
16
20
24
1
10
100
-V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Q ,
GATE CHARGE(nC)
g
Figure 13.
Capacitance vs Drain to Source
Voltage
Figure 14.
Gate Charge vs Gate to Source Voltage
6
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