onsemi-FDD5680
| Part # | onsemi-FDD5680 |
Download  | onsemi-FDD5680 |
March 2015
FDD5680
N-Channel, PowerTrench
MOSFET
Features
General Description
This N-Channel MOSFET is produced using
ON
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
•
38 A, 60 V. R
DS(on)
= 0.021
Ω
@ V
GS
= 10 V
R
DS(on)
= 0.025
Ω
@ V
GS
= 6
V
.
•
Low gate charge (33nC typical).
•
Fast switching speed.
Applications
•
High performance trench technology for extremely
low R
DS(on)
.
•
DC/DC converter
•
Motor drives
D
D
G
G
S
S
TO-252
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
V
60
V
GSS
I
D
Gate-Source Voltage
20
V
A
±
(Note 1)
Maximun Drain Current – Continuous
38
8.5
(Note 1a)
Maximum Drain Current
Maximum Power Dissipation @ T
C
= 25
o
C
T
A
= 25
o
C
– Pulsed
100
(Note 1)
(Note 1a)
(Note 1b)
P
D
60
W
2.8
T
A
= 25
o
C
1.3
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
°
Thermal Characteristics
θ
(Note 1)
R
Thermal Resistance, Junction-to- Case
2.1
96
C/W
C/W
JC
°
°
(Note 1b)
R
Thermal Resistance, Junction-to- Ambient
JA
θ
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD5680
FDD5680
13’’
16mm
2500
2000
Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDD5680/D
T
A
= 25°C unless otherwise noted
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min Typ Max
Units
Off Characteristics
W
DSS
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current
V
DD
= 30 V, I
D
= 38 A
140
38
mJ
I
AR
A
V
µ
A
BV
DSS
Drain-Source Breakdown
Voltage
60
V
GS
= 0 V, I
D
= 250
∆
µ
°
°
Breakdown Voltage
Temperature Coefficient
60
DSS
BV
∆
I
D
= 250
A, Referenced to 25 C
mV/ C
T
J
µ
A
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 48 V, V
GS
= 0 V
1
I
GSSF
Gate-Body Leakage Current,
Forward
V
GS
= 20V, V
DS
= 0 V
100
nA
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
4
nA
(Note 2)
On Characteristics
V
GS(th)
µ
A
Gate Threshold Voltage
2
2.4
V
V
DS
= V
GS
, I
D
= 250
∆
µ
°
°
Gate Threshold Voltage
Temperature Coefficient
-6.4
GS(th)
V
I
D
= 250
A,Referenced to 25 C
mV/ C
∆
T
J
Ω
R
DS(on)
Static Drain-Source
On-Resistance
V
V
GS
= 10 V, I
D
= 8.5 A
GS
= 10 V, I
D
= 8.5 A,T
J
=125 C
0.017 0.021
0.028 0.042
0.019 0.025
°
V
GS
= 6 V, I
D
= 7.5 A
I
D(on)
g
FS
On-State Drain Current
V
GS
= 10 V, V
DS
= 5 V
50
A
S
Forward Transconductance
V
DS
= 5 V, I
D
= 8.5 A
30
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
V
DS
= 30 V, V
GS
= 0 V,
1835
210
90
pF
pF
pF
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
DD
= 30 V, I
D
= 1 A,
GS
= 10 V, R
GEN
= 6
15
9
27
18
56
26
46
ns
ns
Ω
35
16
33
6.5
7.5
ns
ns
Q
g
Q
gs
Q
gd
V
V
DS
= 30 V, I
D
= 8.5 A,
GS
= 10 V,
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
2.3
1.2
A
V
(Note 2)
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.3 A
0.75
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as
the drain tab.
R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user’s board design.
o
o
b) R
θ
JA
= 96 C/W when mounted
a) R
θ
JA
= 45
C/W when
mounted
2
on a 0.076 pad of 2oz copper.
on a 1in
pad of 2oz copper.
Scale
1 : 1 on
letter size paper
2.
Pulse
T
e
st: Pulse Width
≤
300
µ
s, Duty Cycle
≤
2.0%
2
Typical Characteristics
2.2
2
60
V
GS
= 10V
6.0V
50
5.0V
V
GS
= 4.0V
1.8
1.6
1.4
1.2
1
4.5V
40
30
20
10
0
4.5V
5.0V
4.0V
6.0V
7.0V
10V
40
3.5V
0.8
0
10
20
30
50
60
0
1
2
3
4
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.05
0.04
0.03
0.02
0.01
0
2
I
D
= 8.5A
I
D
= 4.3A
V
GS
= 10V
1.8
1.6
1.4
1.2
1
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
3
4
5
6
7
8
9
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
10
1
60
50
40
30
20
10
0
V
GS
= 0V
V
DS
= 5V
T
A
= -55
o
C
25
o
C
125
o
C
T
A
= 125
o
C
25
o
C
0.1
-55
o
C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2
3
4
5
6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
3
Typical Characteristics
(continued)
10
2500
2000
1500
1000
500
f = 1MHz
V
DS
= 10V
I
D
= 8.5A
20V
V
GS
= 0 V
30V
8
6
4
2
0
C
ISS
C
OSS
C
RSS
0
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
60
40
20
0
100
10
100
s
µ
SINGLE PULSE
R
θ
JA
= 96
o
C/W
R
DS(ON)
LIMIT
1ms
10ms
100ms
T
A
= 25
o
C
1S
1
10S
DC
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
R
(t) = r(t)
* R
JA
θ
JA
θ
0.1
0.01
0.1
R
=
96°C/W
JA
θ
0.05
0.01
0.02
Single Pulse
P(pk)
t
1
t
2
0.001
0.0001
T
– T
= P
* R
(t)
JA
J
A
θ
Duty Cycle, D = t
/ t
1
2
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
4
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