onsemi-FDD5810
| Part # | onsemi-FDD5810 |
Download  | onsemi-FDD5810 |
October 2007
FDD5810
N-Channel Logic Level Trench
®
MOSFET
60V, 36A, 27m
Ω
Applications
Motor / Body Load Control
Features
R
DS(ON)
= 22m
Ω (
Typ.), V
GS
= 5V, I
D
= 29A
Q
g(5)
= 13nC (Typ.), V
GS
= 5V
Low Miller Charge
ABS Systems
Powertrain Management
Injection System
Low Q
rr
Body Diode
DC-DC converters and Off-line UPS
UIS Capability (Single Pulse / Repetitive Pulse)
Qualified to AEC Q101
Distributed Power Architecture and VRMs
Primary Switch for 12V and 24V systems
RoHS Compliant
D
D
G
G
S
D-PAK
(TO-252)
S
©2006 Fairchild Semiconductor Corporation
FDD5810 Rev.
A (W)
1
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Parameter
Ratings
60
Units
V
Drain to Source Voltage
Gate to Source Voltage
±
20
V
Drain Current Continuous (V
GS
= 10V)
Drain Current Continuous (V
GS
= 5V)
Continuous (T
A
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 52
o
C/W)
Pulsed
37
A
33
A
I
D
7.4
A
Figure 4
45
A
E
AS
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
Derate above 25
o
C
mJ
72
W
P
D
0.48
-55 to 175
W/
o
C
o
C
T
J
, T
STG
Operating and Storage Temperature
Thermal Characteristics
R
θ
JC
R
θ
JA
Maximum Thermal resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
2.1
52
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
16mm
Quantity
2500 units
FDD5810
FDD5810
TO-252AA
330mm
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
60
–
–
–
–
–
–
V
V
DS
= 48V
1
I
DSS
μ
A
nA
V
GS
= 0V
T
C
= 150
o
C
–
250
±
100
I
GSS
V
GS
=
±
20V
–
On Characteristics
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 32A, V
GS
= 10V
I
D
= 29A, V
GS
= 5V
1
–
1.6
18
22
2
V
22
27
–
R
DS(ON)
Drain to Source On Resistance
m
Ω
I
D
= 32A, V
GS
= 10V,
T
J
= 175
o
C
–
43
53
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
–
–
–
–
–
–
–
–
–
–
1420
150
65
1890
pF
pF
pF
Ω
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Output Capacitance
200
Reverse Transfer Capacitance
Gate Resistance
100
f = 1MHz
3.5
24
–
34
18
–
Q
g
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
nC
nC
nC
nC
nC
nC
Q
g
13
V
DD
= 30V
I
D
= 35A
Q
g(th)
Q
gs
Q
gs2
Q
gd
V
GS
= 0V to 1V
1.3
4.0
2.7
5.0
–
–
–
2
FDD5810 Rev. A (W)
Switching Characteristics
t
on
t
d(on)
t
r
Turn-On Time
Turn-On Delay Time
Rise Time
–
–
–
–
–
–
–
130
ns
ns
ns
ns
ns
ns
12
75
26
34
–
–
–
V
DD
= 30V, I
D
= 35A
V
GS
= 5V, R
GS
= 11
Ω
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–
–
t
off
Turn-Off Time
90
Drain-Source Diode Characteristics
I
SD
= 32A
–
–
–
–
–
–
–
–
1.25
1.0
39
V
V
V
SD
Source to Drain Diode Voltage
I
SD
= 16A
t
rr
Reverse Recovery Time
Reverse Recovery Charge
I
F
= 35A, di/dt = 100A/
μ
s
I
F
= 35A, di/dt = 100A/
μ
s
ns
nC
Q
rr
35
Notes:
1:
Starting T
= 25°C, L = 110
μ
H, I
= 28A, V
= 54V, V
= 10V.
J
AS
DD
GS
3
FDD5810 Rev. A (W)
Typical Characteristics
T
J
= 25°C unless otherwise noted
1.2
40
1.0
30
V
GS
= 10V
0.8
0.6
V
GS
= 5V
20
0.4
10
0.2
0
0
25
50
75
100
125
150
175
0
25
50
75
100
150
175
125
o
T
C
, CASE TEMPERATURE
(
o
C
)
T
, CASE TEMPERATURE (
C)
C
Figure 1.
Normalized Power Dissipation vs Case
Temperature
Figure 2.
Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE – DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
/t
1
2
PEAK T
= P
J
x R
+ T
DM
θ
JC
C
0.01
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3.
Normalized Maximum Transient Thermal Impedance
600
o
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
= 25
C
C
FOR TEMPERATURES
o
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
175 – T
150
C
I = I
25
100
30
V
= 5V
GS
-5
-4
-3
-2
-1
0
1
10
10
10
10
t, PULSE WIDTH (s)
10
10
10
Figure 4.
Peak Current Capability
4
FDD5810 Rev. A (W)
Typical Characteristics
T
J
= 25°C unless otherwise noted
500
200
100
If R = 0
= (L)(I
)/(1.3*RATED BV
10us
t
– V
DD
)
AV
AS
DSS
If R
≠
0
t
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
DD
AV
AS
DSS
100
10
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
o
STARTING T
= 25
C
J
10
1
SINGLE PULSE
1ms
o
T
= MAX RATED
o
J
STARTING T
= 150
C
J
10ms
DC
T
C
= 25
C
1
0.1
200
1
10
100
0.001
0.01
t
0.1
1
10
100
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
, TIME IN AVALANCHE (ms)
AV
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6.
Unclamped Inductive Switching
Capability
Figure 5.
Forward Bias Safe Operating Area
60
60
V
= 4.5V
GS
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
= 10V
GS
V
= 6V
DD
V
= 5V
GS
V
= 4V
GS
40
20
40
20
o
T
= 25
C
J
V
= 3.5V
GS
V
= 3V
GS
o
T
= 175
C
J
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
o
o
T
= -55
C
T
= 25
C
J
C
0
0
4.0
, GATE TO SOURCE VOLTAGE (V)
2.0
3.0
5.0
0
0.5
V
1.0
1.5
2.0
2.5
0
1.0
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
GS
Figure 7.
Transfer Characteristics
Figure 8.
Saturation Characteristics
30
2.8
PULSE DURATION = 80
μ
s
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
2.4
2.0
1.6
1.2
0.8
0.4
26
I
= 35A
D
22
18
14
I
= 1A
D
I
D
= 32A
V
GS
= 10V
-80
-40
0
40
80
120
160
200
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 9.
Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10.
Normalized Drain to Source On
Resistance vs Junction Temperature
5
FDD5810 Rev. A (W)
Typical Characteristics
T
J
= 25°C unless otherwise noted
1.4
1.1
0.8
1.2
1.1
1.0
0.9
I
= 250
μ
A
V
= V
, I
= 250
μ
A
DS D
D
GS
0.5
0.2
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T ,
JUNCTION TEMPERATURE (
C)
T ,
JUNCTION TEMPERATURE (
C)
J
J
Figure 11.
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12.
Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
V
= 30V
DD
C
8
6
4
2
0
iss
1000
C
oss
C
rss
100
10
WAVEFORMS IN
DESCENDING ORDER:
I
I
= 35A
= 1A
D
D
V
= 0V, f = 1MHz
1
GS
0.1
60
10
0
5
10
15
20
25
V
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
DS
g
Figure 13.
Capacitance vs Drain to Source
Voltage
Figure 14.
Gate Charge Waveforms for Constant
Gate Current
6
FDD5810 Rev. A (W)
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life
support devices or systems are devices or systems
2. A
critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation
