onsemi-FDD5N50FTM
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December 2007
UniFET
TM
tm
FDD5N50F
N-Channel MOSFET, FRFET
500V, 3.5A, 1.55
Ω
Features
Description
•
•
•
•
•
•
•
R
DS(on)
= 1.25
Ω
( Typ.)@ V
GS
= 10
V
,
I
D
= 1.75A
Low gate charge ( Typ. 11nC)
Low C
rss
( Typ. 5pF)
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power factor-
correction.
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
D
D
G
S
G
D-PAK
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
500
V
V
±30
-Continuous (T
C
= 25
o
C)
-Continuous (T
C
= 100
o
C)
– Pulsed
3.5
I
D
Drain Current
A
2.1
I
DM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
14
A
mJ
A
E
AS
I
AR
Single Pulsed Avalanche Energy
Avalanche Current
257
3.5
E
AR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
4
4.5
mJ
V/ns
W
W/
o
C
o
C
(T
C
= 25
o
C)
– Derate above 25
o
C
40
P
D
Power Dissipation
0.3
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
-55 to +150
Maximum Lead
T
e
mperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
o
C
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
1.4
Units
R
θ
JC
R
θ
JA
o
C/W
110
©2007 Fairchild Semiconductor Corporation
FDD5N50F Rev. A1
1
Package Marking and Ordering Information
T
C
= 25
o
C unless otherwise noted
Device Marking
FDD5N50F
Device
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Quantity
2500
FDD5N50FTM
FDD5N50FTF
FDD5N50F
D-PAK
380mm
16mm
2000
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
µ
A, V
GS
= 0V, T
J
= 25
o
C
500
–
–
–
–
V
∆
BV
DSS
∆
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
µ
A, Referenced to 25
o
C
0.6
V/
o
C
V
DS
= 500V, V
GS
= 0V
–
–
–
–
–
–
10
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
µ
A
V
DS
= 400V, T
C
= 125
o
C
100
V
GS
= ±30V, V
DS
= 0V
±100
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250
µ
A
V
GS
= 10V, I
D
= 1.75A
V
DS
= 20V, I
D
= 1.75A
3.0
–
–
5.0
1.55
–
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
1.25
4.3
(Note 4)
–
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
490
66
5
650
88
7.5
15
–
pF
pF
pF
nC
nC
V
DS
= 25V, V
GS
= 0V
f = 1MHz
C
oss
C
rss
Q
g(tot)
Q
gs
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
11
3
V
V
DS
= 400V, I
D
= 5A
GS
= 10V
Q
gd
Gate to Drain “Miller” Charge
–
5
–
nC
(Note 4, 5)
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
13
22
28
20
36
54
66
50
ns
ns
ns
ns
V
DD
= 250V, I
D
= 5A
G
= 25
Ω
R
(Note 4, 5)
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
3.5
14
1.5
–
A
A
I
SM
V
SD
t
rr
–
–
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0V, I
SD
= 3.5A
V
65
ns
µ
C
V
GS
= 0V, I
SD
= 5A
dI
F
/dt = 100A/
µ
s
(Note 4)
Q
rr
Reverse Recovery Charge
0.120
–
Notes:
1: Repetitive
Rating: Pulse width limited by maximum junction temperature
2: L
= 42mH, I
= 3.5A, V
= 50V, R
= 25
Ω
, Starting T
= 25°C
AS
DD
G
J
3:
I
≤
3.5A, di/dt
≤
200A/
µ
s, V
≤
BV ,
Starting T
= 25°C
SD
DD
DSS J
4: Pulse
Test: Pulse width
≤
300
µ
s, Duty Cycle
≤
2%
5: Essentially
Independent of Operating Temperature Typical Characteristics
FDD5N50F Rev. A1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
20
V
GS
=
15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
10
5.5 V
150
o
C
1
25
o
C
1
*Notes:
1. 250
µ
s Pulse Test
2. T
C
= 25
o
C
*Notes:
1. V
DS
= 20V
0.1
2. 250
µ
s Pulse Test
0.04
0.1
0.1
1
10
4
5
6
7
8
V
DS
,Drain-Source Voltage[V]
V
GS
,Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.2
2.0
50
10
150
o
C
1.8
V
GS
= 10V
25
o
C
V
GS
= 20V
1.6
1
1.4
*Notes:
1. V
GS
= 0V
*Note: T
J
= 25
o
C
2. 250
µ
s Pulse Test
1.2
0.2
0.0
0
4
8
12
16
20
0.4
0.8
1.2
1.6
I
D
, Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1000
10
C
C
C
= C
+ C
(
C =
shorted
)
gs gd
ds
iss
V
DS
= 100V
= C
+ C
ds gd
oss
rss
V
DS
= 250V
= C
gd
8
6
4
2
0
V
DS
= 400V
750
500
250
0
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
iss
C
oss
C
rss
*Note: I
D
= 5A
9
30
0.1
1
10
0
3
6
12
Q
g
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
FDD5N50F Rev. A1
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
1.2
1.1
1.0
30
40
µ
s
10
100
µ
s
1ms
10ms
1
DC
Operation in This Area
is Limited by R
DS(on)
0.1
*Notes:
0.9
1. T
C
= 25
o
C
2. T
J
= 150
o
C
*Notes:
1. V
GS
= 0V
2. I
D
= 250
µ
A
3. Single Pulse
0.01
0.8
-75
1
10
100
1000
-25
25
75
125
175
T
J
, Junction Temperature
[
o
C
]
V
DS
, Drain-Source Voltage [V]
Figure 9. Maximum Drain Current
4
3
2
1
0
25
50
75
100
125
150
T
C
, Case Temperature
[
o
C
]
Figure 10. Transient Thermal Response Curve
3
1
0.5
0.2
0.1
0.1
P
DM
0.05
t
1
t
2
0.02
0.01
*Notes:
1. Z
θ
JC
(t) = 1.4
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
0.01
Single pulse
0.003
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Rectangular Pulse Duration [sec]
FDD5N50F Rev. A1
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDD5N50F Rev. A1
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D
U
T
V
D
S
_
I
S
D
L
D
r i v
e
r
R
G
S
a
m
e
T
y
p
e
V
a
s
D
U
T
D
D
V
G
S
•
d
v
/ d
c
t
c
o
n
t r o
l l e
d
b
y
R
G
•
I
S
o
n
t r o
l l e
d
b
y
p
u
l s
e
p
e
r i o
d
D
G
a
t e
P
u
l s
e
W
i d
t h
V
– – – – – – – – – – – – – – – – – – – – – – – – – –
D
=
G
S
G
a
t e
P
u
l s
e
P
e
r i o
d
1
0
V
(
D
r i v
e
r
)
I
F
,
B
o
d
y
D
i o
d
e
F
o
r w
a
r d
C
u
r r e
n
t
M
I
S
D
d
i / d
t
(
D
U
T
)
I
R
d
M
B
o
d
y
D
e
i o
R
e
R
e
v
e
r s
d
e
C
u
r r e
n
t
V
D
S
(
D
U
T
)
B
o
d
y
S
D
i o
d
e
c
o
v
e
r y
v
/ d
t
V
V
D
D
D
B
o
d
y
D
i o
d
e
F
o
r w
a
r d
V
o
l t a
e
D
r o
FDD5N50F Rev. A1
6
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1. Life
support devices or systems are devices or systems
2. A
critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Preliminary
Formative / In Design
First Production
This datasheet contains preliminary data; supplementary data will be published
at a later date. Fairchild Semiconductor reserves the right to make changes at
any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
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Obsolete
Full Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
© 2008 Fairchild Semiconductor Corporation
