onsemi-FDD6030BL
| Part # | onsemi-FDD6030BL |
Download  | onsemi-FDD6030BL |
July 2001
FDD6030BL/FDU6030BL
30V N-Channel PowerTrench
Ò
MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It
h
a
s been optimized for
low gate charge, low
R
DS( ON)
, fast switching speed and
extremely low
R
DS(ON)
in a small package.
·
42 A, 30 V
R
DS(ON)
= 16 m
W
@ V
GS
= 10 V
R
DS(ON)
= 22 m
W
@ V
GS
= 4.5 V
·
Low gate c
h
arge (22 nC typical)
·
Fast switching
Applications
·
High performance trench technology for extremely
·
DC/DC converter
·
Motor drives
low R
DS(ON)
D
D
G
I-PAK
(TO-251AA)
G
S
D-PAK
(TO-252)
G D S
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
V
GSS
I
D
Gate-Source Voltage
Continuous Drain Current
@T
C
=25°C
@T
A
=25°C
±
20
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
42
10
100
Pulsed
P
D
W
Power Dissipation
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
50
(Note 1a)
(Note 1b)
3.8
1.6
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +175
°
C
Thermal Characteristics
R
q
J
C
R
q
JA
R
q
JA
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
3.0
45
96
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape width
12mm
Quantity
FDD6030BL
FDD6030BL
FDU6030BL
D
–
PAK (TO-252)
I
–
PAK (TO-251)
2500 units
75
FDU6030BL
Tube
N/A
Ó
2001 Fairchild Semiconductor Corporation
FDD6030BL/FDU6030BL Rev C(W)
Electrical Characteristics
T
A
= 25°C unless other
w
i
se noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
I
AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse,
V
DD
= 15 V
130
10
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V,
I
D
= 250
m
A
30
V
Breakdown Voltage Temperature
Coefficient
D
BV
DSS
D
T
J
22
I
D
= 250
m
A,Referenced to 25
°
C
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
m
A
nA
nA
I
GSSF
I
GSSR
100
–100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V
DS
= V
GS
,
I
D
= 250
m
A
1
1.6
–4
3
V
D
V
GS(th)
D
T
J
I
D
= 250
m
A, Referenced to 25
°
C
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V,
V
GS
= 4.5 V,
V
GS
= 10 V,
I
D
= 10 A
I
D
= 8.4 A
I
D
= 10 A, T
J
=125
°
C
12
17
19
16
22
26
m
W
I
D(on)
g
FS
On–State Drain Current
V
GS
= 10 V,
V
DS
= 5 V
50
A
S
Forward Transconductance
V
DS
= 10 V,
I
D
= 10 A
29
Dynamic Characteristics
C
Input Capacitance
1143
249
pF
pF
pF
iss
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
107
Switching Characteristics
(Note
2
)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
10
18
5
12
18
29
12
31
ns
ns
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
W
ns
ns
Q
g
22
3
nC
nC
nC
V
DS
= 15V,
V
GS
= 10 V
I
D
= 10 A,
Q
gs
Q
gd
4
FDD6030BL/FDU6030BL Rev. C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
3.2
1.2
A
V
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 3.2 A
(Note 2)
0.7
Notes:
1.
R
q
J
A
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
q
J
C
is guaranteed by design while R
q
C
A
is determined by the user’s board design.
a)
R
q
J
A
= 45°C/W when mounted on a
b)
R
q
J
A
= 96°C/W when mounted
2
1in pad
of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
P
D
3.
Maximum current is calculated as:
R
DS(ON)
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V.
Package current limitation is 21A
FDD6030BL/FDU6030BL Rev. C(W)
Typical Characteristics
80
2.2
2
6.0V
V
GS
= 10V
5.0V
V
GS
= 3.5V
4.5V
60
40
20
0
1.8
1.6
1.4
1.2
1
4.0V
4.0V
4.5V
5.0V
3.5V
6.0V
10V
3.0V
0.8
0
20
40
I
D
, DRAIN CURRENT (A)
60
80
0
1
2
3
4
5
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
2
0.06
0.05
0.04
0.03
0.02
0.01
0
I
D
= 5A
I
D
= 10A
V
GS
= 10V
1.8
1.6
1.4
1.2
1
T
A
= 125
o
C
T
A
= 2
5
o
C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
G
S
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
60
50
40
30
20
10
0
100
T
A
=-5
5
o
C
V
GS
= 0V
V
D
S
= 5V
25
o
C
125
o
C
10
1
T
A
= 125
o
C
25
o
C
0.1
-55
o
C
0.01
0.001
0.0001
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
S
D
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6030BL/FDU6030BL Rev. C(W)
Typical Characteristics
10
1600
1200
800
400
0
f = 1MHz
V
GS
= 0 V
I
D
= 10A
V
D
S
= 5V
10V
8
6
4
2
0
C
ISS
15V
C
OSS
C
RSS
0
4
8
12
16
20
24
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
V
D
S
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
80
60
40
20
0
1000
100
10
SINGLE PULSE
R
q
JA
= 96°C/W
T
A
= 25°C
100µs
1m
10ms
100ms
1s
R
DS(ON)
LIMIT
10s
DC
1
V
GS
= 10V
SINGLE PULSE
R
q
JA
= 9
6
o
C/W
0.1
T
A
= 25
o
C
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
R
q
J
A
(t) = r(t) + R
JA
q
0.2
R
q
JA
= 96 °C/W
0.1
0.1
0.05
0.02
P(pk)
t
1
t
2
0.01
0.01
T
J
– T
A
= P * R
q
JA
(t)
Duty Cycle, D = t
1
/
t
2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6030BL/FDU6030BL Rev. C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
STAR*POWER™
Stealth™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT
™
DenseTrench™
DOME™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
EcoSPARK™
E
2
CMOS
TM
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
EnSigna
TM
UltraFET
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE T
O
A
NY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NO
T
A
SSUM
E
A
NY LIABILIT
Y
A
RISING OUT OF TH
E
A
PPLICATION OR USE O
F
A
NY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOU
T
T
HE EXPRESS WRITTE
N
A
PPROVA
L
O
F FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H3
