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March 2015
FDD6670A
30V N-Channel PowerTrench
Ò
MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low
R
DS ( ON)
, fast switching speed and
extremely low
R
DS(ON)
in a small package.
·
66 A, 30 V
R
DS(ON)
= 8 m
W
@ V
GS
= 10 V
R
DS(ON)
= 10 m
W
@ V
GS
= 4.5 V
·
Low gate charge
·
Fast Switching
Applications
·
High performance trench technology for extremely
·
DC/DC converter
·
Motor Drives
low R
DS(ON)
D
D
G
G
S
D-PAK
(TO-252)
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
V
GSS
Gate-Source Voltage
Continuous Drain Current
@T
C
=25°C
@T
A
=25°C
±
20
I
D
(Note 3)
(Note 1a)
(Note 1a)
(Note 3)
66
15
100
Pulsed
P
D
W
Power Dissipation
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
63
(Note 1a)
(Note 1b)
3.2
1.3
T
J
, T
Operating and Storage Junction Temperature Range
–55 to +175
°
C
STG
Thermal Characteristics
R
q
JC
R
q
JA
R
q
JA
Thermal Resistance, Junction-to-Case
(Note 1)
2.4
40
96
°
C/W
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
16mm
Quantity
FDD6670A
FDD6670A
D-PAK (TO-252)
13’’
2500 units
FDD6670A Rev. 3.3
Ó
2005 Fairchild Semiconductor Corp.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
E
AS
I
AS
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V
DD
= 15 V, I
D
= 66 A
67
66
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
30
V
V
GS
= 0 V,
I
D
= 250
m
A
D
BV
DSS
D
T
J
Breakdown Voltage Temperature
Coefficient
26
I
D
= 250
m
A,Referenced to 25
°
C
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
DS
= 24 V,
V
GS
= 0 V
1
m
A
I
GSS
V
GS
=
±
20 V,
V
DS
= 0 V
±
100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
1
1.8
–5
3
V
V
DS
= V
GS
,
I
D
= 250
m
A
Gate Threshold Voltage
Temperature Coefficient
D
V
GS
(
t
h)
D
T
J
I
D
= 250
m
A,Referenced to 25
°
C
mV/
°
C
6.3
7.9
9.5
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V,
V
GS
= 4.5 V,
I
D
= 13 A
V
GS
= 10 V,
I
D
= 15 A,T =125
°
C
I
D
= 15 A
8
10
13
m
W
J
I
D(on)
g
FS
On–State Drain Current
V
GS
= 10 V,
V
DS
= 10 V,
V
DS
= 5 V
I
D
= 15 A
50
A
S
Forward Transconductance
60
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
1755
430
180
1.3
pF
pF
pF
W
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 15 mV,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
12
29
19
16
4.6
6.2
20
21
47
34
22
ns
ns
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
W
ns
ns
Q
g
nC
nC
nC
V
DS
= 15V,
V
GS
= 5 V
I
D
= 15 A,
Q
g
s
Q
gd
FDD6670A Rev. 3.3
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
2.3
1.2
A
V
V
SD
t
rr
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
0.74
28
V
GS
= 0 V,
I
S
= 2.3 A
I
F
= 15 A, dI
F
/dt = 100 A/µs
(Note 2)
ns
nC
Q
Diode Reverse Recovery Charge
18
rr
Notes:
1.
R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
q
JC
is guaranteed by design while R
q
CA
is determined by the user’s board design.
a) R
q
JA
= 45°C/W when mounted on a
1in
2
pad of 2 oz copper
b) R
q
JA
= 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
P
D
3.
Maximum current is calculated as:
R
DS(ON)
where P
D
is maximum power dissipation at T
C
= 25°C and R
DS
(
o
n)
is at T
J(max)
and V
GS
= 10V.
Package current limitation is 21A
FDD6670A Rev. 3.3
Typical Characteristics
100
3
V
GS
=10V
6.0V
4.0V
2.8 V
GS
= 3.0V
2.6
2.4
2.2
2
80
60
40
20
0
4.5V
3.5V
1.8
3.5V
1.6
1.4
1.2
1
4.0V
4.5V
3.0V
6.0V
10V
0.8
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.6
1.4
1.2
1
0.02
I
D
= 66A
I
D
= 33A
V
GS
= 10V
0.0175
0.015
T
A
= 125
o
C
0.0125
0.01
0.0075
0.005
0.8
0.6
T
A
= 25
o
C
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
90
80
70
60
50
40
30
20
10
0
1000
V
DS
= 5V
V
GS
= 0V
100
10
T
A
= 125
o
C
1
25
o
T
A
=125
o
C
0.1
-55
o
C
-55
o
C
0.01
0.001
0.0001
25
o
C
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
V
S
D
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6670A Rev. 3.3
Typical Characteristics
10
2400
2000
1600
1200
800
f = 1MHz
V
GS
= 0 V
I
D
= 66A
8
6
4
2
0
V
DS
= 10V
C
iss
20V
15V
C
oss
400
C
rss
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
V
D
S
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
1000
SINGLE PULSE
R
q
JA
= 96°C/W
T
A
= 25°C
100µs
80
100
10
R
DS(ON)
LIMIT
1ms
10ms
100ms
1s
60
40
20
0
10s
DC
1
V
GS
= 10V
SINGLE PULSE
0.1
0.01
R
q
= 96
o
C/W
JA
T
A
= 25
o
C
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
R
q
JA
(t) = r(t) * R
q
JA
0.2
R
q
= 96 °C/W
JA
0.1
0.1
0.05
0.02
P(pk)
t
1
0.0
t
2
0.01
T
J
– T
A
= P * R
q
JA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6670A Rev. 3.3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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