onsemi-FDD6670S
| Part # | onsemi-FDD6670S |
Download  | onsemi-FDD6670S |
September 2001
FDD6670S
30V N
–
Channel PowerTrench
Ò
SyncFET
™
General Description
Features
The FDD6670S is designed to replace
a single
·
64 A, 30 V
R
DS(ON)
= 9 m
W
@ V
GS
= 10 V
R
DS(ON)
= 12.5 m
W
@ V
GS
= 4.5 V
MOSFET and Schottky diode in synchronous DC:DC
power supplies.
This 30V MOSFET is designed to
maximize power conversion efficiency, providing a
low
R
DS(ON)
and low gate charge.
The FDD6670S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
The performance of
the FDD6670S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6670A in parallel with a Schottky diode.
·
·
·
Includes SyncFET Schottky body diode
Low gate charge (17nC typical)
High performance trench technology for extremely
low R
DS(ON)
Applications
·
High power and current handling capability
·
·
DC/DC converter
Motor Drives
.
D
D
G
G
S
TO-252
S
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
30
V
V
A
V
GSS
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
±
20
I
D
(Note 3)
64
(Note 1a)
100
P
D
W
Power Dissipation
(Note 1)
70
(Note 1a)
3.2
(Note 1b)
1.3
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1a)
(Note 1b)
1.8
40
R
q
JC
R
q
JA
R
q
JA
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD6670S
FDD6670S
13’’
16mm
2500 units
FDD6670S Rev E(W)
Ó
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
= 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
I
AR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, V
DD
= 15 V, I
D
=14A
245
14
mJ
A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 1 mA
30
V
19
D
BV
DSS
D
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 10 mA, Referenced to 25
°
C
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= 0 V
V
DS
= 0 V
500
100
m
A
nA
nA
I
GSSF
I
GSSR
V
GS
= –20 V,
V
DS
= 0 V
–100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA
1
2
3
V
Gate Threshold Voltage
Temperature Coefficient
–3.3
D
V
GS(th)
D
T
J
I
D
= 10 mA, Referenced to 25
°
C
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 10 V,
V
GS
= 4.5 V,
I
D
= 13.8 A
I
D
= 11.7 A
6
9
10
9
12.5
15
m
W
V
GS
= 10 V, I
D
= 13.8A, T
J
= 125
°
C
I
D(on)
g
FS
On–State Drain Current
V
GS
= 10 V,
V
DS
= 15 V,
V
DS
= 5 V
50
A
S
Forward Transconductance
I
D
= 13.8 A
27
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
2010
526
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
186
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
10
18
18
55
23
24
ns
ns
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
W
34
ns
14
ns
Q
g
Q
g
s
Q
gd
17
nC
nC
nC
V
DS
= 15 V,
V
GS
= 10 V
I
D
= 13.8 A,
6.2
5.5
Drain–Source Diode Characteristics
V
SD
V
GS
= 0 V,
I
S
= 3.5 A
V
GS
= 0 V,
I
S
= 7 A
I
F
= 3.5 A,
(Note 2)
(Note 2)
0.49
0.56
20
0.7
V
Drain–Source Diode Forward
Voltage
t
rr
nS
nC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
d
iF
/d
t
= 300 A/µs
(Note 3)
Q
rr
19.7
FDD6670S Rev E (W)
Electrical Characteristics
T =
25°C unless otherwise noted
A
Notes:
1.
R is
the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
q
JA
the drain pins.
R
is guaranteed by design while R
is determined by the user’s board design.
q
CA
q
JC
a)
R
= 40°C/W when mounted on a
b)
R
= 96°C/W when mounted
q
JA
q
JA
1in
2
pad of 2 oz copper
on a minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
P
D
3.
Maximum current is calculated as:
R
DS(ON)
where P
D
is maximum power di
s
s
ipation at
T
C
= 25°C and R
DS(on)
is at
T
J(max)
and V
GS
= 10V.
Package current limitation is 21A
FDD6670S Rev E (W)
Typical Characteristics
2.6
2.2
1.8
1.4
1
50
V
G
S
= 10V
4.5V
6.0V
40
4.0V
V
GS
= 3.5V
3.5V
30
20
10
0
4.0V
4.5V
6.0V
3.0V
10V
0.6
0
0.5
1
1.5
2
0
10
20
30
40
50
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.025
I
D
= 13.5A
V
G
S
= 10V
I
D
= 6.8A
0.02
0.015
0.01
T
A
= 125
o
C
0.8
0.6
T
A
= 25
o
C
0.005
-50
-25
0
25
50
75
100
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
G
S
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
70
60
50
40
30
20
10
0
25
o
C
V
G
S
= 0V
T
A
= 125
o
C
T
A
= -55
o
C
V
DS
= 5V
125
o
C
1
0.1
25
o
C
-55
o
C
0.01
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
2
2.5
3
3.5
4
4.5
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
G
S
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD6670S Rev E (W)
Typical Characteristics
(continued)
10
3600
3000
2400
1800
1200
600
f = 1MHz
V
G
S
= 0 V
I
D
=13.5A
V
D
S
= 5V
10V
8
6
4
2
0
C
ISS
15V
C
OSS
C
RSS
0
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
Q
g
, GATE CHARGE (nC)
V
D
S
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
40
30
20
10
0
SINGLE PULSE
R
q
JA
= 96°C/W
T
A
= 25°C
m
s
100
1ms
10ms
100ms
R
D
S(ON)
LIMIT
10
1s
10s
1
DC
V
G
S
= 10V
SINGLE PULSE
0.1
R
q
JA
= 96
o
C/W
T
A
= 25
o
C
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
q
J
A
(t) = r(t) *
R
q
J
A
0.2
R
q
J
A
= 96 °C/W
0.1
0.1
0.05
0.02
P(pk)
t
1
0.01
t
2
0.01
T
J
– T
A
= P *
R
q
J
A
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDD6670S Rev E (W)
Typical Characteristics
(continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET.
Figure 12
shows the reverse recovery characteristic of the
FDD6670S.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage.
This will
increase the power in the device.
0.1
100
o
C
0.01
0.001
25
o
C
0.0001
0.00001
0
10
20
30
V
DS
, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
Time: 10.0ns/div
Figure 12. FDD6670S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDD6670A).
Time: 10.0ns/div
Figure 13. Non-SyncFET (FDD6670A) body
diode reverse recovery characteristic.
FDD6670S Rev E (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
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STAR*POWER™
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CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
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GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOL
T
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DenseTrench™
DOME™
POP™
Power247™
PowerTrenc
h
â
QFET™
EcoSPARK™
E
2
CMOS
TM
TinyLogic™
QS™
EnSigna
TM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILEN
T
S
WITCHE
R
â
FACT™
FACT Quiet Series™
UltraFE
T
â
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILIT
Y
,
F
UNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILIT
Y
A
RISING OUT OF THE APPLICATION OR USE O
F
A
NY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICE
S
O
R
S
YSTEM
S
W
ITHOU
T
T
H
E
E
XPRES
S
W
RITTE
N
A
PPROVA
L
O
F
F
AIRCHIL
D
S
EMICONDUCTO
R
C
ORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
