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March 2015
FDD8447L
40V N-Channel PowerTrench
®
MOSFET
40V, 5
0
A, 8.5m
Ω
Features
General Description
Max r
DS(on)
= 8.5m
Ω
at V
GS
= 10V, I
D
= 14A
Max r
DS(on)
= 11
.0
m
Ω
at V
GS
= 4.5V, I
D
= 11A
Fast Switching
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
®
technology to
deliver low r
DS(on)
and optimized BV
DSS
capability to offer
superior performance benefit in the application.
RoHS Compliant
Application
s
Inverter
Power Supplies
D
D
G
G
S
D-PAK
(TO-252)
S
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
50
57
I
D
A
(Note 1a)
1
5.2
100
-Pulsed
I
S
Max Pulse Diode Current
Drain-Source Avalanche Energy
100
A
E
AS
(Note 3)
153
mJ
Power Dissipation
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
44
P
D
(Note 1a)
3.1
W
(Note 1b)
1.3
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
–
55 to +150
°
C
Thermal Characteristics
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case
2.8
40
96
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1
b)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
16mm
Quantity
FDD8447L
FDD8447L
D-PAK(TO-252)
2500 units
1
©200
8
Fairchild Semiconductor Corporation
FDD8447L Rev. 1.2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
µ
A, V
GS
= 0V
40
V
∆
BV
DSS
∆
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
µ
A, referenced to 25°C
35
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 32V,
V
GS
= 0V
V
GS
= ±20V, V
GS
= 0V
1
µ
A
±100
nA
On Characteristics
(Note 2)
V
GS(th)
∆
V
GS(th)
∆
T
J
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
µ
A
1.0
1.9
3.0
V
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
µ
A, referenced to 25°C
-5
mV/°C
V
GS
= 10V, I
D
= 14A
7.0
8.5
10.4
58
8.5
11.0
14.0
r
DS(on)
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 4.5V, I
D
= 11A
m
Ω
V
GS
= 10V, I
D
= 14A, T
J
=125°C
V
DS
= 5V,
I
D
= 14A
g
FS
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1970
250
pF
pF
pF
Ω
V
DS
= 20V, V
GS
= 0V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
150
f = 1MHz
1.27
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
12
12
38
9
21
21
61
18
52
28
ns
ns
V
DD
= 20
V
,
I
D
= 1A
V
GS
= 10V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
ns
ns
Q
g(TOT)
Q
g(TOT)
Q
gs
T
o
tal Gate Charge, V
GS
= 10V
T
o
tal Gate Charge, V
GS
= 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
37
20
6
nC
nC
nC
nC
V
DD
= 20
V
,
I
D
= 14A
V
GS
= 10V
Q
gd
7
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain-Source Diode Forward Current
(Note 1a)
2.6
A
V
SD
t
rr
Source to Drain Diode
Forward Voltage
Reverse Recovery Time
V
GS
= 0V, I
S
=
14
A
(Note 2)
0.8
2
2
11
1.2
V
ns
nC
I
F
=
14
A, di/dt = 100A/
µ
s
Q
rr
Reverse Recovery Charge
Notes:
1:
R
is the sum of the junction-to-case and case-to- ambient
thermal resistance where the case thermal reference is defined
as the solder mounting surface of the drain pins.
θ
JA
R
θ
JC
is guaranteed by design
while R
θ
JA
is determined by the user’s board design.
—————
a. 40°C/W when mounted
on a
1 in
2
pad of
2 oz
copper
b. 96°C/W when mounted on
a minimum pad.
2:
Pulse
T
e
st: Pulse Width < 30
0
µ
s, Duty cycle < 2.0%.
o
3:
Starting TJ = 25
C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
2
FDD8447L Rev. 1.2
Typical Characteristics
3
2.6
2.2
1.8
1.4
1
100
V
GS
= 10V
6.0V
4.0V
V
GS
= 3.0V
80
60
40
20
0
4.5V
5.0V
3.5V
3.5V
4.0V
4.5V
5.0V
60
6.0V
10.0V
3.0V
0.6
0
20
40
80
100
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.02
1.6
1.4
1.2
1
I
D
= 14A
I
D
= 7A
V
GS
= 10V
0.0175
0.015
0.0125
0.01
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.0075
0.005
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
1000
100
80
60
40
20
0
V
GS
= 0V
V
DS
= 5V
100
10
1
T
A
= 125
o
C
0.1
25
o
C
-55
o
C
T
A
= 125
o
C
0.01
0.001
0.0001
-55
o
C
25
o
C
1
1.5
2
2.5
3
3.5
4
4.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD8447L Rev. 1.2
3
Typical Characteristics
10
3000
2500
2000
1500
1000
500
f = 1MHz
V
GS
= 0 V
V
DS
= 10V
I
D
= 14A
30V
8
6
4
2
0
20V
C
iss
C
oss
C
rss
0
0
10
20
30
40
0
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
100
80
60
40
20
0
1000
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
100µs
100
10
R
DS(ON)
LIMIT
1ms
10ms
100ms
1s
DC
1
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
0.1
T
A
= 25
o
C
0.01
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
100
100
10
1
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
80
60
40
20
0
T
J
= 25
o
C
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
t
AV
, TIME IN AVANCHE(ms)
Figure 11. Single Pulse Maximum Peak
Current
Figure 12. Unclamped Inductive Switching
Capability
FDD8447L Rev. 1.2
4
Typical Characteristics
1
D = 0.5
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 96°C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t
1
t
2
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
SINGLE
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 13. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD8447L Rev. 1.2
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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