onsemi-FDD8453LZ-F085
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FDD8453LZ
–
F085
®
N-Channel Power Trench
MOSFET
40V, 50A, 6.5m
Ω
Features
Typ r
DS(on)
= 5m
Ω
at V
GS
= 10V, I
D
= 15A
Typ r
DS(on)
= 6m
Ω
at V
GS
= 4.5V, I
D
= 13A
General Description
This N-Channel MOSFET is produced using
ON
Semiconductor’s advanced PowerTrench
®
process that
has been especially tailored to minimize the
on-state resistance and switching loss. G-S zener ha
S
HBM ESD protection level > 7kv typical
RoHS Compliant
been added to enhance ESD voltage level.
Qualified to AEC Q101
Applications
Inverter
Synchronous Rectifier
Symbol
Package
D
D
G
G
S
D-PAK
(
TO-252)
S
©2012
Semiconductor Components Industries, LLC.
August-2017,
Rev.
3
Publication Order Number:
FDD8453LZ-F085/D
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
V
GS
±20
Drain Current
– Continuous (Package limited)
-Pulsed
T
C
= 25°C
50
I
D
A
Figure4
88
E
AS
P
D
Single Pulse Avalanche Energy
(Note 1)
mJ
W
W/
o
C
o
C
Power Dissipation
Dreate above 25
o
C
118
0.79
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to + 175
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient, 1in
2
copper pad area
1.27
52
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
FDD8453LZ
FDD8453LZ
–
F085
D-PAK(TO-252)
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
40
–
–
–
–
–
–
1
V
V
DS
= 32V,
GS
= 0V
μ
A
uA
V
T
C
= 150
o
C
–
250
±10
I
GSS
V
GS
= ±20V
–
On Characteristics
V
GS(th)
r
DS(on)
g
FS
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
1.8
5.0
6.0
9.4
91
3.0
6.5
7.8
12.2
–
V
I
D
= 15A, V
GS
= 10V
–
–
m
Ω
m
Ω
m
Ω
S
Drain to Source On Resistance
Forward Transconductance
I
D
= 13A, V
GS
= 4.5V
I
D
= 15A, V
GS
= 10V
T
J
=175
o
C
–
V
DS
= 5V, I
D
= 15A
–
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
2935
340
260
1.8
60
–
–
pF
pF
pF
Ω
V
DS
= 20V, V
GS
= 0V,
C
oss
C
rss
R
g
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Gate Resistance
–
f = 1MHz
–
Q
g(
T
o
T)
Q
g(5)
Q
gs
T
o
tal Gate Charge at 10V
T
o
tal Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
V
V
GS
= 0 to 10V
GS
= 0 to 5V
78
42
–
nC
nC
nC
nC
V
DD
= 20V
I
D
= 15A
I
g
=1mA
32
7.5
13
Q
gd
–
2
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t
on
t
d(on)
t
r
Turn-On Time
Turn-On Delay Time
Rise Time
–
–
–
–
–
–
–
34
–
ns
ns
ns
ns
ns
ns
12
10
43
7
–
V
DD
= 20V, I
D
= 15A,
V
GS
= 10V, R
GEN
= 6
Ω
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–
–
t
off
Turn-Off Time
–
80
Drain-Source Diode Characteristics
I
SD
= 2A
–
–
–
–
0.7
0.8
25
1.2
1.3
33
V
V
SD
Source to Drain Diode Voltage
I
SD
= 15A
V
t
rr
Reverse Recovery Time
ns
nC
I
F
= 15A, dI
SD
/dt = 100A/
μ
s
Q
rr
Reverse Recovery Charge
14
19
Notes:
o
1:
Starting T
= 25 C, L = 0.11mH, I
= 40A, V
= 36V during inductor
charging and V
= 0V
during the time in Avalanche.
J
AS
D
D
D
D
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
For
All
ON
Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
3
Typical Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
120
90
60
30
0
CURRENT LIMITED
BY PACKAGE
V
GS
= 10V
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE
(
o
C
)
T
C
, CASE TEMPERATURE
(
o
C
)
Figure 2.
Maximum Continuous Drain Current vs
Case Temperature
Figure 1.
Normalized Power Dissipation vs Case
Temperature
2
DUTY CYCLE – DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.02
t
0.01
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t
/t
1
2
SINGLE PULSE
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JA
θ
JA C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 3.
Normalized Maximum Transient Thermal Impedance
1E4
1000
100
10
T
C
= 25
o
C
V
GS
= 10V
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 – T
C
I = I
2
150
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION(s)
Figure 4.
Peak Current Capability
4
Typical Characteristics
1000
100
10
1000
If R = 0
= (L)(I
)/(1.3*RATED BV
t
AV
– V
)
AS
DSS
DD
If R
AV
≠
0
t
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
AS
DSS DD
100
10
STARTING T
J
= 25
o
C
100us
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
1
STARTING T
J
= 150
o
C
SINGLE PULSE
T
= MAX RATED
J
10ms
DC
o
T
C
= 25
C
1
0.1
0.001
0.01
0.1
1
10
100
1000
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to
ON Semiconductor
Application Notes AN7514
and AN7515
Figure 5.
Forward Bias Safe Operating Area
Figure 6.
Unclamped Inductive Switching
Capability
100
100
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
GS
= 4V
V
DD
= 5V
75
V
GS
= 3.5V
75
50
25
0
V
GS
= 4.5V
50
T
J
= 175
o
C
25
V
GS
= 3V
T
J
= 25
o
C
T
J
= -55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
5
0.0
0.4
0.8
1.2
1.6
2.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7.
Transfer Characteristics
Figure 8.
Saturation Characteristics
21
2.2
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
=
15A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
18
15
12
9
T
J
= 175
o
C
T
J
= 25
o
C
6
I
D
= 15A
V
GS
= 10V
3
2
4
6
8
10
-80
-40
0
40
80
120
160
200
o
T
J
, JUNCTION TEMPERATURE
(
C
)
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
Figure 9.
Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10.
Normalized Drain to Source On
Resistance vs Junction Temperature
5
Typical Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
1.15
1.10
1.05
1.00
0.95
0.90
V
GS
=
V
DS
I
D
= 1mA
I
D
= 250
μ
A
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE
(
o
C
)
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 11.
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12.
Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
10
I
D
= 15A
C
iss
8
V
DD
= 15V
V
DD
= 20V
6
1000
4
C
oss
V
DD
= 25V
2
0
f = 1MHz
C
rss
V
GS
= 0V
100
0.1
1
10
40
0
10
20
30
40
50
60
70
Q
g
,
GATE CHARGE(nC)
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Figure 13.
Capacitance vs Drain to Source
Voltage
Figure 14.
Gate Charge vs Gate to Source Voltage
6
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