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November 2013
FDD850N10L
N-Channel PowerTrench
MOSFET
100 V, 15.7 A, 75 m
Ω
®
Features
Description
•
•
•
•
•
•
•
R
DS(on)
= 61 m
Ω
( yp.) @ V
GS
= 10
V
,
I
D
= 12 A
R
DS(on)
= 64 m
Ω
(Typ.) @ V
GS
= 5
V
,
I
D
= 12 A
Low Gate Charge (Typ. 22.2 nC)
Low C
rss
(Typ. 42 pF)
This N-Channel MOSFET is produced using Fairchld Semicon-
ductor’s advanced PowerTrench
®
process that has been tai-
lored to minimize the on-state resistance and maintain superior
switching performance.
Fast Switching
Application
100% Avalanche Tested
Improved dv/dt Capability
•
•
•
•
•
Consumer Appliances
LED TV and Monitor
•
RoHS Compliant
Synchronous Rectification
Uninterruptible Power Supply
Micro Solar Inverter
D
D
G
S
G
D-PAK
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
Parameter
FDD850N10L
Unit
V
Drain to Source Voltage
Gate to Source Voltage
100
±20
V
– Continuous (T
C
= 25
o
C)
– Continuous (T
C
= 100
o
C)
– Pulsed
15.7
11.1
63
I
D
Drain Current
A
I
DM
Drain Current
(Note 1)
(Note 2)
(Note 3)
A
mJ
E
AS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
41
6.0
V/ns
W
W/
o
C
o
C
(T
C
= 25
o
C)
– Derate Above 25
o
C
50
P
D
Power Dissipation
0.33
-55 to +175
300
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
Maximum Lead
T
e
mperature for Soldering, 1/8” from Case for 5 Seconds
o
C
Thermal Characteristics
Symbol
Parameter
Unit
FDD850N10L
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
3.0
87
o
C/W
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
1
Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FDD850N10L
DPAK
T
a
pe and Reel
330 mm
16 mm
2500 units
FDD850N10L
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
100
–
–
–
V
Δ
BV
DSS
/
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, Referenced to 25
o
C
0.1
–
V/
o
C
V
DS
= 80 V, V
GS
= 0 V
–
–
–
–
–
–
1
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μ
A
V
DS
= 80 V, T
C
= 150
o
C
500
±100
V
GS
= ±20 V, V
DS
= 0 V
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
1.0
–
2.5
75
96
–
V
V
GS
= 10 V, I
D
= 12 A
–
–
–
61
64
31
m
Ω
m
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 5 V, I
D
= 12 A
V
DS
= 10
V
,
I
D
= 15.7 A
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
1100
80
1465
105
–
pF
pF
pF
nC
nC
nC
nC
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge at 10V
T
o
tal Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
42
Q
g(tot)
Q
g(tot)
Q
gs
V
GS
= 10 V
22.2
12.3
3.0
28.9
16.0
–
V
GS
= 5 V
V
DS
= 80 V,
I
D
= 15.7 A
Q
gd
5.7
–
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
–
–
–
–
–
17
21
44
52
64
26
–
ns
ns
ns
ns
Ω
V
DD
= 50 V, I
D
= 15.7 A,
GS
= 5 V, R
G
= 4.7
Ω
Turn-On Rise Time
V
Turn-Off Delay Time
27
Turn-Off Fall Time
8
(Note 4)
ESR
Equivalent Series Resistance (G-S)
f = 1 MHz
1.75
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
15.7
63
1.3
–
A
A
I
SM
V
SD
t
rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 12 A
–
V
38
50
ns
nC
V
GS
= 0 V, V
DS
= 80 V, I
SD
= 15.7 A,
dI
F
/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
–
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1 mH, I
= 9.1 A, R
= 25
Ω
, starting T
= 25
°
C.
AS
G
J
3. I
≤
15.7 A, di/dt
≤
200 A/
μ
s, V
≤
BV
, starting T
= 25
°
C.
SD
DD
DSS
J
4. Essentially independent of operating temperature typical characteristics.
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
100
V
GS
= 15.0V
*Notes:
10.0V
6.0V
5.0V
3.5V
3.0V
1. V
DS
= 10V
2. 250
μ
s Pulse Test
10
1
175
o
C
25
o
C
10
-55
o
C
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
1
0.1
0.1
1
10
0
2
4
6
V
DS
, Drain-Source Voltage[V]
V
GS
, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
100
0.20
0.16
0.12
0.08
0.04
0.00
175
o
C
25
o
C
10
V
GS
= 5V
V
GS
= 10V
*Notes:
1. V
GS
= 0V
*Note: T
C
= 25
o
C
2. 250
μ
s Pulse Test
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
10
20
30
40
50
V
SD
, Body Diode Forward Voltage [V]
I
D
, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
5000
C
C
C
= C
+ C
(
C =
shorted
)
gs gd
ds
iss
= C
+ C
ds
oss
rss
gd
V
DS
= 20V
= C
gd
8
6
4
2
0
V
DS
= 50V
1000
100
10
V
DS
= 80V
C
iss
C
oss
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
*Note: I
D
= 15.7A
16 20
0
4
8
12
24
0.1
1
10
100
Q
g
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.15
1.10
1.05
1.00
3.0
2.5
2.0
1.5
1.0
0.95
0.90
*Notes:
1. V
GS
= 0V
*Notes:
1. V
GS
= 10V
0.5
2. I
D
= 250
μ
A
2. I
D
= 12A
0.0
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
o
o
T
J
, Junction Temperature
[
C
]
T
J
, Junction Temperature
[
C
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
100
18
15
100
μ
s
10
12
V
GS
= 10V
1ms
1
9
Operation in This Area
is Limited by R
DS(on)
10ms
100ms
DC
V
GS
= 5V
6
*Notes:
1. T
C
= 25
o
C
0.1
3
2. T
J
= 175
o
C
R
θ
JC
= 3.0
o
C/W
3. Single Pulse
0.01
0
25
0.1
1
10
100 200
50
75
100
125
150
175
o
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature
[
C
]
Figure 11. Transient Thermal Response Curve
4
1
0.5
0.2
0.1
P
DM
0.05
t
1
t
2
0.02
0.01
0.1
*Notes:
Single pulse
1. Z
θ
JC
(t) = 3.0
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
t ,
Rectangular Pulse Duration [sec]
1
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
4
I
= const.
G
Figure 12. Gate Charge Test Circuit & Waveform
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
10%
V
GS
DUT
V
GS
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure 13. Resistive Switching Test Circuit & Waveforms
V
GS
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
5
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
6
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
7
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intended to be an exhaustive list of all such trademarks.
AccuPower™
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CROSSVOLT
™
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F-PFS™
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Sync-Lock™
®*
®
®
®
tm
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
G
max
™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
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TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
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Marking Small Speakers Sound Louder
and Better™
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MICROCOUPLER™
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Saving our world, 1mW/W/kW at a time™
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®
TRUECURRENT *
μ
SerDes™
SMART START™
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Solutions for Your Success™
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Fairchild
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OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
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®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2010 Fairchild Semiconductor Corporation
FDD850N10L Rev. C1
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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