onsemi-FDD86369
| Part # | onsemi-FDD86369 |
Download  | onsemi-FDD86369 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most
current and up-to-date ordering information can be found at
www.onsemi.com
. Please
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDD86369
®
N-Channel PowerTrench
MOSFET
80 V, 90 A, 7.9 m
Ω
Features
Typical R
= 5.9 m
Ω
at V
= 10V, I
= 80 A
GS D
DS(on)
D
Typical Q
= 34 nC at V
= 10V, I
= 80 A
g(tot)
GS
D
UIS Capability
RoHS Compliant
D
G
Applications
G
PowerTrain Management
S
Solenoid and Motor Drivers
Integrated Starter/Alternator
Primary Switch for 12V Systems
D-PAK
(TO-252)
S
For current package drawing, please refer to the ON website at
TO/TO252A03.pdf
MOSFET Maximum Ratings
T
J
= 25°C unless otherwise noted.
Symbol
V
DSS
Parameter
Ratings
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
80
V
V
V
GS
±20
Drain Current – Continuous (V
GS
=10) (Note 1)
Pulsed Drain Current
T
C
= 25°C
T
C
= 25°C
90
I
D
A
See Figure 4
E
AS
P
D
Single Pulse Avalanche Energy
(Note 2)
(Note 3)
29
150
mJ
W
W/
o
C
o
C
o
C/W
o
C/W
Power Dissipation
Derate Above 25
o
C
1.0
T
J
, T
STG
Operating and Storage
T
e
mperature
-55 to + 175
1.0
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
52
Notes:
1: Current
is limited by bondwire configuration.
2: Starting
T =
25°C, L = 14
μ
H, I
= 64A, V
= 80V during inductor charging and V
= 0V during time in avalanche.
J
AS
DD
DD
3: R
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
θ
JA
mounting surface of the drain pins.
presented here is based on mounting on a 1 in
pad of 2oz copper.
R
is guaranteed by design, while R
is determined by the board design.
The maximum rating
θ
JC
θ
JA
2
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD86369
FDD86369
D-PAK(TO-252)
13”
16 mm
2500 units
Semiconductor Components Industries, LLC, 2017
January, 2017, Rev. 1.0
Publication Order Number:
FDD86369/D
1
Electrical Characteristics
T
J
= 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
B
VDSS
I
DSS
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
80
–
–
–
–
–
–
1
V
V
DS
= 8 0 V ,
T
J
= 25
o
C
μ
A
mA
nA
V
GS
= 0V
T
J
= 175
o
C (Note 4)
–
1
I
GSS
V
GS
= ±20V
–
±100
On Characteristics
V
GS(th)
R
DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
2.7
5.9
4.0
7.9
V
T
J
= 25
o
C
–
–
m
Ω
m
Ω
I
D
= 80A,
GS
= 10V
T
J
= 175
o
C (Note 4)
13.0
17.4
V
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
2530
430
16
–
–
pF
pF
pF
Ω
V
DS
= 40V, V
GS
= 0V,
f = 1MHz
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
–
V
GS
= 0.5V, f = 1MHz
2.2
36
–
Q
g(
T
o
T)
Q
g(th)
Q
gs
T
o
tal Gate Charge
V
GS
= 0 to 10V
54
–
nC
nC
nC
nC
V
I
DD
= 64V
D
= 80A
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
V
GS
= 0 to 2V
4.6
13
–
Q
gd
8.5
–
Switching Characteristics
t
on
t
d(on)
t
r
Turn-On Time
Turn-On Delay
Rise Time
–
–
–
–
–
–
–
70
–
ns
ns
ns
ns
ns
ns
13
34
22
9
–
V
V
DD
= 40V, I
D
= 80A,
GS
= 10V, R
GEN
= 6
Ω
t
d(off)
t
f
Turn-Off Delay
Fall Time
–
–
t
off
Turn-Off Time
–
46
Drain-Source Diode Characteristics
I
SD
=80A, V
GS
= 0V
–
–
–
–
–
1.25
1.2
64
V
V
SD
Source-to-Drain Diode Voltage
I
SD
= 40A, V
GS
= 0V
–
V
t
rr
Reverse-Recovery Time
49
40
ns
nC
I
F
= 80A, dI
SD
/dt = 100A/
μ
s
Q
rr
Reverse-Recovery Charge
53
Note:
4: The
maximum value is specified by design at T
= 175°C.
Product is not tested to this condition in production.
J
2
Typical Characteristics
120
100
80
60
40
20
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
= 10V
CURRENT LIMITED
BY SILICON
CURRENT LIMITED
BY PACKAGE
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE(
o
C)
T
C
, CASE TEMPERATURE(
o
C)
Figure 2.
Maximum Continuous Drain Current vs.
Case Temperature
Figure 1.
Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE – DESCENDING ORDER
1
D = 0.50
0.20
P
0.10
DM
0.05
0.02
t
0.01
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
1
2
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JA
θ
JA C
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 3.
Normalized Maximum Transient Thermal Impedance
1
0
0
0
T
C
= 25
o
C
V
G
S
= 1
0
V
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 – T
C
I = I
2
150
1
0
0
SINGLE PULSE
10
1
0
-5
10
-4
10
-3
1
0
–
2
1
0
-1
1
10
t, RECT
A
N
G
U
L
AR P
U
L
SE DURATION(s)
Figure 4.
Peak Current Capability
3
Typical Characteristics
500
100
1000
100
10
If R = 0
= (L)(I
)/(1.3*RATED BV
t
AV
– V
)
AS
DSS
DD
If R
≠
0
t
AV
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
AS
DSS DD
100us
OPERATION IN THIS
AREA MAY BE
STARTING T
J
= 25
o
C
1
LIMITED BY r
DS(on)
10
1ms
10ms
100ms
STARTING T
J
= 150
o
C
SINGLE PULSE
0.1
T
= MAX RATED
J
o
T
C
= 25
C
1
0.01
0.001
0.01
0.1
1
10
100
1
10
100 200
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Application Notes AN7514 and AN7515
Figure 6.
Unclamped Inductive Switching
Capability
Figure 5.
Forward Bias Safe Operating Area
200
400
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
100
V
DD
= 5V
T
J
= -55
o
C
150
T
J
= 175
o
C
T
J
= 175
o
C
T
J
= 25
o
C
10
1
100
T
J
= 25
o
C
50
0
0.1
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7.
Transfer Characteristics
Figure 8.
Forward Diode Characteristics
200
150
100
50
200
80
μ
s PULSE WIDTH
Tj=175
o
C
V
GS
V
GS
15V Top
10V
8V
7V
6V
15V Top
10V
8V
7V
6V
150
5.5V
5V Bottom
5.5V
5V Bottom
100
50
0
80
μ
s PULSE WIDTH
Tj=25
o
C
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9.
Saturation Characteristics
Figure 10.
Saturation Characteristics
4
Typical Characteristics
100
2.4
2.0
1.6
1.2
0.8
0.4
I
D
=
80A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
80
60
40
20
0
T
J
= 175
o
C
I
D
= 80A
V
GS
= 10V
T
J
= 25
o
C
6
5
7
8
9
10
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 11.
R
DSON
vs. Gate Voltage
Figure 12.
Normalized R
DSON
vs. Junction
Temperature
1.5
1.10
V
GS
=
V
DS
I
D
= 5mA
I
D
= 250
μ
A
1.2
0.9
0.6
0.3
0.0
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE(
o
C)
Figure 13.
Normalized Gate Threshold Voltage vs.
Temperature
Figure 14.
Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
10
I
D
= 80A
V
DD
=32V
8
C
iss
V
DD
= 40V
1000
V
DD
= 48V
6
C
oss
100
4
2
0
10
C
rss
f = 1MHz
GS
= 0V
V
1
0.1
1
10
100
0
5
10
15
20
25
30
35
40
Q
g
,
GATE CHARGE(nC)
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Figure 15.
Capacitance vs. Drain to Source
Voltage
Figure 16.
Gate Charge
vs. Gate to Source
Voltage
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMEN
T
:
N. American Technical Support
: 800
−
282
−
9855
T
o
ll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81
−
3
−
5817
−
1050
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone
: 303
−
675
−
2175 or 800
−
344
−
3860
T
o
ll Free USA/Canada
Fax
: 303
−
675
−
2176 or 800
−
344
−
3867
T
o
ll Free USA/Canada
Email
: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
©
Semiconductor Components Industries, LLC
