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July 2014
FDFMA3N109
Integrated N-Channel PowerTrench
®
MOSFET and Schottky Diode
General Description
Features
MOSFET:
This device is designed specifically as a single package
solution for a boost topology in cellular handset and
other ultra-portable applications.
It features a MOSFET
with low input capacitance, total gate charge and on-
state resistance, and an independently connected
schottky diode with low forward voltage and reverse
leakage current to maximize boost efficiency.
•
2.9 A, 30 V
R
DS(ON)
= 123 m
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 140 m
Ω
@ V
GS
= 3.0 V
= 163 m
Ω
@ V
GS
= 2.5 V
R
DS(ON)
Schottky:
•
V
F
< 0.46 V @ 500mA
•
Low profile – 0.8 mm maximum – in the new package
MicroFET 2×2 mm
The MicroFET 2×2 package offers exceptional thermal
performance for its physical size and is well suited to
switching and linear mode applications.
)
•
HBM ESD protection level = 1.8kV typical (Note 3
•
RoHS Compliant
PIN 1
A
NC
D
1
2
3
6
5
4
A
K
K
D
NC
D
G
S
K
G
S
MicroFET 2×2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DS
V
GS
I
D
Drain-Source Voltage
Gate-Source Voltage
30
V
V
±
12
2.9
Drain Current – Continuous (T
C
= 25°C, V
GS
= 4.5V)
– Continuous (T
C
= 25°C, V
GS
= 2.5V)
– Pulsed
2.7
A
10
P
D
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Temperature
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
(Note 1b)
1.5
W
0.65
T
J
, T
STG
V
RRM
I
O
–55 to +150
°
C
V
28
1
A
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
83
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
193
101
228
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
8mm
Quantity
109
FDFMA3N109
7’’
3000 units
FDFMA3N109 Rev
B3
©
2008 Fairchild Semiconductor Corporation
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
30
V
V
GS
= 0 V,
I
D
= 250
µ
A
∆
BV
DSS
∆
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
µ
A, Referenced to 25°C
25
mV/°C
I
DSS
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
V
DS
= 24 V,
V
GS
= 0 V
1
µ
A
µ
A
I
GSS
V
GS
= ± 12 V,
V
DS
= 0 V
±10
On Characteristics
V
GS(th)
Gate Threshold Voltage
0.4
1.0
–3
1.5
V
V
DS
= V
GS
,
I
D
= 250
µ
A
∆
V
GS(th)
∆
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250
µ
A, Referenced to 25°C
mV/
°
C
V
GS
= 4.5V, I
D
= 2.9A
75
84
123
140
163
166
203
268
V
GS
= 3.0V, I
D
= 2.7A
V
GS
= 2.5V, I
D
= 2.5A
92
Static Drain–Source
On–Resistance
R
DS(on)
m
Ω
V
GS
= 4.5V, I
D
= 2.9A, T
C
= 85°C
V
GS
= 3.0V, I
D
= 2.7A, T
C
= 150°C
V
GS
= 2.5V, I
D
= 2.5A, T
C
= 150°C
95
138
150
Dynamic Characteristics
C
iss
Input Capacitance
190
30
220
40
pF
pF
pF
Ω
V
DS
= 15 V,
V
GS
= 0 V,
C
oss
Output Capacitance
f = 1.0 MHz
C
rss
R
G
Reverse Transfer Capacitance
Gate Resistance
20
30
V
GS
= 0 V,
f = 1.0 MHz
4.6
Switching Characteristics
(Note 2)
V
DD
= 15 V,
I
D
= 1 A,
R
GEN
= 6
Ω
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6
8
12
16
21
4
ns
ns
V
GS
= 4.5 V,
12
ns
2
ns
V
DS
= 15 V,
V
I
D
= 2.9 A,
Q
g
Q
gs
Q
gd
2.4
0.35
0.75
3.0
nC
nC
nC
GS
= 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
2.9
A
V
V
SD
Drain–Source Diode Forward
Voltage
I
S
= 2.0 A
0.9
0.8
10
1.2
1.2
I
S
= 1.1 A
t
rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I
F
= 2.9 A,
dI
F
/dt = 100 A/µs
ns
Q
rr
2
nC
Schottky Diode Characteristics
100
4.7
10
µ
A
T
J
= 25°C
T
J
= 85°C
I
R
Reverse Leakage
Forward Voltage
Forward Voltage
V
R
= 28 V
I
F
= 1 A
0.07
mA
0.50 0.57
0.49 0.60
0.40 0.46
0.36 0.43
T
J
= 25°C
T
J
= 85°C
V
F
V
F
V
V
T
J
= 25°C
T
J
= 85°C
I
F
= 500 mA
FDFMA3N109 Rev B3
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Notes:
1.
R
θ
JA
is determined with the device mounted on a 1 in
2
oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θ
JC
is guaranteed by design while R
θ
JA
is
determined by the user’s board design.
(a)
MOSFET R
θ
JA
= 83°C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b)
MOSFET R
θ
JA
= 193°C/W when mounted on a minimum pad of 2 oz copper
(c)
Schottky R
θ
JA
= 101°C/W when mounted on a 1in
2
pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(d)
Schottky R
θ
JA
= 228°C/W when mounted on a minimum pad of 2 oz copper
a) 83
o
C/W
when
b) 193
o
C/W
when
c)101
o
C/W
when
b) 228
o
C/W
when
mounted on
a 1in
2
pad
of 2 oz
mounted on
a minimum
pad of
mounted on
a 1in
2
pad
of 2 oz
mounted on
a minimum
pad of
copper
2 oz copper
copper
2 oz copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%
3
: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDFMA3N109 Rev B3
Typical Characteristics
1.8
1.6
1.4
1.2
1
10
2.5V
V
GS
= 4.5V
V
GS
= 2.0V
8
6
4
2
0
2.7V
2.9V
3.5V
2.0V
2.5V
2.7V
2.9V
3.5V
4.0V
4.5V
1.5V
0.8
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.24
0.2
1.8
1.6
1.4
1.2
1
I
D
= 2.9A
I
D
= 1.45A
V
GS
= 4.5V
0.16
0.12
0.08
0.04
T
A
= 125
o
C
T
A
= 25
o
C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
100
V
GS
= 0V
T
A
= -55
o
C
V
DS
= 5V
125
o
C
10
25
o
C
1
0.1
6
4
T
A
= 125
o
C
0.01
25
o
C
2
-55
o
C
0.001
0.0001
0
0.5
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDFMA3N109 Rev B3
Typical Characteristics
300
250
200
150
100
50
10
f = 1MHz
V
GS
= 0 V
I
D
= 2.9A
8
V
DS
= 10V
20V
C
iss
6
15V
4
2
0
C
oss
C
rss
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.1
10
T
J
= 125
o
C
0.01
1
T
J
= 125
o
C
0.001
T
J
= 100
o
C
T
J
= 25
o
C
0.1
0.0001
0.00001
0.01
T
J
= 25
o
C
0.001
0.000001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
5
10
15
20
25
30
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage.
Figure 10. Schottky Diode Reverse Current.
1
D = 0.5
R
θ
(t) = r(t) * R
θ
JA
JA
R
θ
JA
=193°C/W
0.2
P(pk)
0.1
0.1
0.05
t
1
0.02
0.01
t
2
T
J
– T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDFMA3N109 Rev B3
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
FDFMA3N109 Rev B3
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intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
F-PFS™
FRFET
®*
®
®
®
tm
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
TinyCalc™
®
Green FPS™ e-Series™
G
max
™
GTO™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
TranSiC™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
TriFault Detect™
TRUECURRENT *
EfficentMax™
ESBC™
®
μ
SerDes™
SMART START™
®
Solutions for Your Success™
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®
SPM
Fairchild
®
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
UHC
Fairchild Semiconductor
FACT Quiet Series™
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
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®
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仙童
™
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I68
FDFMA3N109 Rev B3
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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