onsemi-FDG327NZ
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FDG327NZ
20V N-Channel PowerTrench
Ò
MOSFET
Features
General Description
·
1.5 A, 20 V.
R
DS(ON)
= 90
m
W
@ V
GS
= 4.5 V.
R
DS(ON)
= 100 m
W
@ V
GS
= 2.5 V
R
DS(ON)
= 140 m
W
@ V
GS
= 1.8 V
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
It has been optimized use
in small switching regulators, providing an extremely
low R
DS(ON)
and gate charge (Q
G
) in a small package.
·
·
·
Fast switching speed
Low gate charge
Applications
High performance trench technology for extremely
low R
DS(ON)
·
·
·
DC/DC converter
Power management
Load switch
·
High power and current handling capability.
S
D
D
G
D
Pin 1
D
SC70-6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
V
20
V
GSS
Gate-Source Voltage
±
8
I
D
Drain Current
– Continuous
– Pulsed
(Note 1a)
1.5
A
6
P
D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
0.42
W
°
C
0.38
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
300
333
R
q
JA
°
C/W
R
q
JA
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.37
FDG327NZ
7’’
8mm
3000 units
Ó
200
8
Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publiaction Order Number:
FDG327NZ/D
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
20
V
V
GS
= 0 V,
I
D
= 250
m
A
D
BV
DSS
D
T
J
Breakdown Voltage Temperature
Coefficient
11
I
D
= 250
m
A, Referenced to 25
°
C
mV/
°
C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V
DS
= 16 V,
V
GS
= 0 V
V
DS
= 0 V
1
m
A
m
A
V
GS
=
±
8 V,
±
10
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
0.4
0.7
–2
1.5
V
V
DS
= V
GS
,
I
D
= 250
m
A
D
V
GS(th)
D
T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
m
A, Referenced to 25
°
C
mV/
°
C
V
GS
= 4.5 V,
V
GS
= 2.5 V,
V
GS
= 1.8 V,
I
D
= 1.5 A
I
D
= 1.4 A
I
D
= 1.2 A
68
77
90
86
90
Static Drain–Source
On–Resistance
100
140
123
m
W
R
DS(on)
V
GS
= 4.5 V, I
D
= 1.5 A, T
J
=125
°
C
I
D(on)
g
FS
On–State Drain Current
V
GS
= 4.5V,
V
DS
= 10 V,
V
DS
= 5 V
I
D
= 1.5 A
3
A
S
Forward Transconductance
9
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
412
81
pF
pF
pF
W
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
44
V
GS
= 15 mV,
f = 1.0 MHz
1.9
Switching Characteristics
(Note 2)
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
6.2
2.3
18
13
10
33
10
6
ns
ns
n
s
ns
nC
nC
nC
V
DD
= 10 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
W
2.9
4.2
0.4
1
Q
g
Q
gs
Q
gd
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 1.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
V
SD
V
GS
= 0 V,
I
S
= 0.32 A
(Note 2)
I
F
= 1.5 A,
d
iF
/d
t
= 100 A/µs
0.6
1.2
V
t
rr
4
2
nS
nC
Q
rr
Diode Reverse Recovery Charge
Notes:
1.
R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
q
JC
is guaranteed by design while R
q
CA
is determined by the user’s board design.
a)
300°C/W when
mounted on a 1in
2
pad
of 2 oz copper.
b)
333°C/W when mounted
on a minimum pad of 2 oz
copper.
2.
Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
2
Typical Characteristics
10
1.8
1.6
1.4
1.2
1
V
GS
= 4.5V
2.5V
2.0V
1.8V
V
GS
=1.5V
8
6
4
2
0
1.8V
1.5V
2.0V
2.5V
3.0V
4.5V
0.8
0
1
2
3
0
2
4
6
8
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.22
1.5
1.4
I
D
= 1.5A
V
GS
= 4.5V
I
D
= 0.8A
0.17
0.12
0.07
0.02
1.3
1.2
1.1
1
T
A
= 125
o
C
T
A
= 25
o
C
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
0.5
1.5
2.5
3.5
4.5
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
10
8
T
A
= -55
o
C
V
GS
= 0V
V
DS
= 5.0V
25
o
C
1
T
A
= 125
o
C
125
o
C
25
o
C
0.1
6
-55
o
C
0.01
4
0.001
2
0
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.5
1
1.5
2
2.5
V
SD
, BODY
DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
Typical Characteristics
5
600
500
400
300
200
100
0
f = 1 MHz
V
GS
= 0 V
V
DS
= 5V
I
D
= 1.5A
10V
4
C
ISS
15V
3
2
1
0
C
OSS
C
RSS
0
5
10
15
20
0
1
2
3
4
5
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
20
15
10
5
R
DS(ON)
LIMIT
SINGLE PULSE
R
q
JA
= 333°C/W
T
A
= 25°C
100
m
s
1ms
10ms
100ms
1s
10s
DC
1
0.1
V
GS
= 4.5V
SINGLE PULSE
R
q
JA
= 333
o
C/W
T
A
= 25
o
C
0.01
0
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
q
JA
(t) = r(t) * R
q
JA
q
JA
= 333
o
C/W
R
0.2
0.1
P(pk)
0.1
0.05
t
1
0.02
0.01
t
2
T
J
– T
A
= P * R
q
JA
(t)
Duty Cycle, D = t
1
/ t
2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
4
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