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March 2009
FDG410NZ
Single N-Channel PowerTrench
®
MOSFET
20 V, 2.2 A, 70 m
Ω
Features
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized use in small switching regulaters, providing an
extremely low r
DS(on)
and gate charge (Q
g
) in a small package.
Max r
DS(on)
= 70 m
Ω
at V
GS
= 4.5 V, I
D
= 2.2 A
Max r
DS(on)
= 77 m
Ω
at V
GS
= 2.5 V, I
D
= 2.0 A
Max r
DS(on)
= 87 m
Ω
at V
GS
= 1.8 V, I
D
= 1.8 A
Max r
DS(on)
= 115 m
Ω
at V
GS
= 1.5
V
,
I
D
= 1.5 A
HBM ESD protection level > 2 kV (Note 3)
High performance trench technology for extremely low r
DS(on)
High power and current handling capability
Fast switching speed
Applications
DC/DC converter
Power management
Load switch
Low gate charge
RoHS Compliant
S
D
D
D
6
5
1
D
D
D 2
G
D
D
3
4 S
G
SC70-6
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
20
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±8
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
T
A
= 25 °C
(Note 1a)
2.2
I
D
A
6.0
T
A
= 25 °C
T
A
= 25 °C
(Note 1a)
(Note 1b)
0.42
P
D
W
0.38
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
300
333
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
8 mm
Quantity
.41
FDG410NZ
SC70-6
7 ”
3000 units
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev
.
B
1
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
µ
A, V
GS
= 0 V
20
V
∆
BV
DSS
∆
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
µ
A, referenced to 25 °C
17
mV
/
°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 16 V, V
GS
= 0 V
V
GS
= ±8 V, V
DS
= 0 V
1
µ
A
µ
A
±10
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
µ
A
0.4
0.7
-3
1.0
V
∆
V
GS(th)
∆
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
µ
A, referenced to 25 °C
GS
= 4.5
V
,
I
D
= 2.2 A
mV/°C
V
50
56
67
83
70
77
V
GS
= 2.5
V
,
I
D
= 2.0 A
V
GS
= 1.8
V
,
I
D
= 1.8 A
V
GS
= 1.5
V
,
I
D
= 1.5 A
87
r
DS(on)
Static Drain to Source On Resistance
Forward Transconductance
m
Ω
115
V
GS
= 4.5
V
,
I
D
= 2.2 A,
T
J
= 125 °C
71
11
100
g
FS
V
DD
= 5 V,
I
D
= 2.2 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
400
70
535
95
pF
pF
pF
Ω
V
DS
= 10 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
45
70
2.8
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
5.3
2.3
18
11
10
33
10
7.2
ns
ns
V
DD
= 10
V
,
I
D
= 2.2 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
ns
2.3
5.1
0.6
1.0
ns
Q
g
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
nC
nC
nC
V
GS
= 4.5
V
,
V
DD
= 10 V,
D
= 2.2 A
Q
gs
Q
gd
I
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain-Source Diode Forward Current
0.35
1.2
20
A
V
V
SD
t
rr
Source to Drain Diode
Forward Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 0.35 A
(Note 2)
0.6
11
ns
nC
I
F
= 2.2 A, di/dt = 100 A/
µ
s
Q
rr
Reverse Recovery Charge
2.5
10
Notes:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
JA
θ
JA
θ
JC
the user’s board design.
b. 333 °C/W when mounted on
a
minimum pad of 2 oz copper.
a. 300 °C/W when mounted
on a 1 in
pad of
2 oz copper.
2
2. Pulse Test: Pulse Width < 30
0
µ
s, Duty cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev
.
B
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted
6
2.5
2.0
1.5
1.0
0.5
V
GS
= 4.5 V
V
GS
= 3.5 V
V
GS
= 2.5 V
5
4
3
2
1
0
V
GS
= 1.5 V
V
GS
= 1.8 V
V
GS
= 1.5 V
V
GS
= 1.8 V
V
GS
= 2.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µ
s
V
GS
= 3.5 V
V
GS
= 4.5 V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
0
0.2
V
DS
0.4
0.6
0.8
1.0
1
2
3
4
5
6
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figure 1.
On Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
1.4
1.2
1.0
0.8
0.6
180
I
D
= 2.2 A
GS
= 4.5 V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
160
140
120
100
80
I
D
= 1.1 A
T
J
= 125
o
C
T
J
= 25
o
C
60
40
1.0
-75 -50 -25
T
J
0
25 50 75
100 125 150
1.5
2.0
2.5
3.0
3.5
4.0
4.5
,
JUNCTION TEMPERATURE
( )
o
C
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
6
6
V
GS
= 0 V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
5
4
3
2
1
0
V
DS
= 5 V
1
0.1
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= -55
o
C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.5
1.0
1.5
2.0
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev
.
B
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
5
1000
100
10
I
D
= 2.2 A
4
C
iss
V
DD
= 5 V
3
V
DD
= 10 V
V
DD
= 15 V
C
oss
2
1
0
C
rss
f = 1 MHz
= 0 V
V
GS
0.1
1
10
20
0
1
2
3
4
5
6
Q ,
GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
10
10
5
10
3
10
1
10
-1
10
-3
10
-5
V
GS
= 0 V
0.1 ms
1 ms
1
0.1
T
J
= 125
o
C
10 ms
THIS AREA IS
LIMITED BY r
T
J
= 25
o
C
DS(on)
100 ms
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 333
o
C/W
10 s
1 s
DC
T
A
= 25
o
C
0.01
0
2
4
6
8
10
12
14
0.01
0.1
1
10
100
V
GS
,
GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 9.
Forward Bias Safe
Operating Area
Figure 10.
Gate Leakage Current vs Gate to Source
Voltage
100
10
1
V
GS
= 4.5 V
SINGLE PULSE
R
θ
JA
= 333
o
C/W
A
= 25
o
C
T
0.1
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (sec)
1
10
100
1000
Figure 11.
Single Pulse
Maximum Power
Dissipation
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev
.
B
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
P
0.1
DM
0.05
0.02
0.01
t
1
t
0.01
0.001
2
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
R
θ
JA
= 333
o
C/W
1
2
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 12.
Junction-to-Ambient Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev
.
B
5
Dimensional Outline and Pad Layout
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev
.
B
6
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®
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G
max
™
PowerTrench
PowerXS™
The Power Franchise
®
®
SM
Programmable Active Droop™
®
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Quiet Series™
RapidConfigure™
®
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®
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Saving our world, 1mW /W /kW at a time™
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I40
7
©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev
.
B
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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