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” or its affiliates and/or
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onsemi
. “
T
ypical” parameters which may be provided in
onsemi
data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts.
onsemi
does not convey any license under any of its intellectual property rights nor the rights of others.
onsemi
products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use
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products for any such unintended or unauthorized application, Buyer shall indemnify and hol
d
onsemi
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onsemi
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FDG6306P
P-Channel 2.5V Specified PowerTrench
Ò
MOSFET
General Description
Features
This
P
–
Channel 2.5V
specified MOSFET is a rugged
gate version
of ON
Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications
with a wide range of gate
drive voltage (2.5V – 12V).
·
–0.6 A, –20 V.
R
DS(ON)
= 420
m
W
@ V
GS
= –4.5 V
R
DS(ON)
= 630 m
W
@ V
GS
= –2.5 V
·
Low gate charge
·
High performance trench technology for extremely
Applications
low R
DS(ON)
·
Battery management
·
Load switch
·
Compact industry standard SC70-6 surface mount
package
S
G
D
S
G
D
D
G
S
1 or 4
2 or 5
3 or 6
6 or 3
5 or 2
4 or 1
D
G
Pin 1
S
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are
interchangeable.
Absolute Maximum Ratings
T
A
=25
o
C unl
e
ss otherwise noted
Symbol
V
DSS
Parameter
Drain-Source Voltage
Ratings
Units
–20
V
V
A
12
±
V
GSS
I
D
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
(Note 1)
(Note 1)
–0.6
–2.0
P
D
Power Dissipation for Single Operation
0.3
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
q
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
3000 units
.06
FDG6306P
7’’
8mm
Semiconductor Components Industries, LLC, 2017
Aug, 2017, Rev.1.4
Publication Order Number:
FDG6306P
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ
Max
Units
Off Characteristics
BV
DSS
Drain–Source Breakdown
–20
–14
V
V
GS
= 0 V,
I
D
= –250
m
A
Voltage
Breakdown Voltage Temperature
Coefficient
D
BV
DSS
D
T
J
I
D
= –250
m
A, Referenced to 25
°
C
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= –16 V, V
GS
= 0 V
–1
m
A
nA
nA
I
GSSF
I
GSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V
GS
= –12 V, V
DS
= 0 V
V
GS
= 12 V,
V
DS
= 0 V
–100
100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
–0.6
–2
–1.2
3
–1.5
V
V
DS
= V
GS
,
I
D
= –250
m
A
Gate Threshold Voltage
Temperature Coefficient
D
V
GS(th)
D
T
J
I
D
= –250
m
A, Referenced to 25
°
C
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –4.5 V,
I
D
= –0.6 A
V
GS
= –2.5 V,
I
D
= –0.5 A
V
GS
= –4.5 V,
I
D
= –0.6 A, T =125°C
300
470
400
420
630
700
m
W
J
I
D(on)
g
FS
On–State Drain Current
V
GS
= –4.5 V, V
DS
= –5 V
A
Forward Transconductance
V
DS
= –5 V,
I
D
= –0.6 A
1.8
S
Dynamic Characteristics
C
Input Capacitance
114
24
9
pF
pF
pF
iss
V
DS
= –10 V,
V
GS
= 0 V,
f = 1.0 MHz
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
V
DD
= –10 V,
I
D
= 1 A,
V
GS
= –4.5 V,
R
GEN
= 6
W
t
d(on)
t
r
t
d(off)
t
f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
5.5
14
11
25
ns
ns
6
12
ns
1.7
1.4
0.3
0.4
3.4
2.0
ns
V
DS
= –10 V,
I
D
= –0.6 A,
V
GS
= –4.5 V
Q
g
nC
nC
nC
Q
gs
Q
gd
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
–0.25
–1.2
A
V
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= –0.25 A
(Note 2)
–0.77
Notes:
1.
R
q
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins.
R
q
JC
is guaranteed by design while R
q
JA
is determined by the user’s board design.
R
q
JA
= 415°C/W when mounted on a minimum pad .
2.
Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
2
Typical Characteristics
2
2.5
2.25
2
V
G
S
= -4.5V
-3.5V
1.6
1.2
0.8
0.4
0
-3.0V
-2.5V
V
GS
= -2.5V
1.75
1.5
1.25
1
-3.0V
-3.5V
-2.0V
-4.0V
-4.5V
0.75
0
0.5
1
-I
D
, DRAIN CURRENT (A)
1.5
2
0
0.5
1
1.5
2
2.5
3
150
3
–
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.2
1
1.4
I
D
= -0.3 A
I
D
= -0.6A
1.3
1.2
1.1
1
V
GS
= -4.5V
0.8
0.6
0.4
0.2
T
A
= 125
o
C
0.9
0.8
0.7
T
A
= 25
o
C
-50
-25
0
25
50
75
100
125
1.5
2
2.5
3
3.5
4
4.5
5
T
J
, JUNCTION TEMPERATURE (
o
C)
-V
G
S
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
2
1.5
1
V
GS
= 0V
T
A
= -55
o
C
25
o
C
125
o
C
V
D
S
= -5V
1
T
A
= 125
o
C
0.1
25
o
C
0.01
-55
o
C
0.5
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.5
1
1.5
2
2.5
–
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
–
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
Typical Characteristics
5
200
160
120
80
V
DS
= -5V
f = 1MHz
V
GS
= 0 V
I
D
= -0.6A
-10V
4
3
2
1
0
-15V
C
ISS
40
C
OSS
C
RSS
0
0
0.3
0.6
0.9
1.2
1.5
1.8
0
5
10
15
20
Q
g
, GATE CHARGE (nC)
–
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
30
24
18
12
6
SINGLE PULSE
R
q
JA
= 415
o
C/W
T
A
= 25
o
C
m
100
s
R
DS(ON)
LIMIT
1ms
1
10ms
100ms
1s
DC
0.1
V
GS
= -4.5V
SINGLE PULSE
R
q
J
A
= 415
o
C/W
T
A
= 25
o
C
0.01
0.1
0
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
–
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGL
E
P
ULSE
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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