onsemi-FDI040N06
| Part # | onsemi-FDI040N06 |
Download  | onsemi-FDI040N06 |
August 2012
FDI040N06
N-Channel PowerTrench
MOSFET
60V, 168A, 4.0m
Ω
®
Features
General Description
•
•
•
•
R
DS(on)
= 3.2m
Ω
( Typ.) @ V
GS
= 10
V
, I
D
= 75A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Fast Switching Speed
Low Gate Charge
High Performance Trench Technology for Extremely Low
R
DS(on)
Application
•
•
High Power and Current Handling Capability
RoHS Compliant
•
DC to DC convertors / Synchronous Rectification
D
G
I
2
-PAK
G D S
FDI Series
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
Parameter
FDI040N06
60
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±20
-Continuous (T
C
= 25
o
C, Silicion Limited)
-Continuous (T
C
= 100
o
C, Silicion Limited)
-Continuous (T
C
= 25
o
C, Package Limited)
168*
118*
I
D
Drain Current
A
120
I
DM
Drain Current
– Pulsed
(Note 1)
(Note 2)
(Note 3)
672
A
mJ
E
AS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
872
7.0
V/ns
W
W/
o
C
o
C
(T
C
= 25
o
C)
– Derate above 25
o
C
231
P
D
Power Dissipation
1.54
T
J
, T
STG
T
L
Operating and Storage
T
e
mperature Range
-55 to +175
Maximum Lead
T
e
mperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
o
C
*
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
R
θ
JC
R
θ
JA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FDI040N06
0.65
Units
o
C/W
62.5
©2012 Fairchild Semiconductor Corporation
FDI040N06 Rev.
C0
1
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDI040N06
FDI040N06
TO-262
Tube
–
50
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V, T
C
= 25
o
C
60
–
–
–
–
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, Referenced to 25
o
C
0.04
V/
o
C
V
DS
= 60V, V
GS
= 0V
–
–
–
–
1
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μ
A
V
DS
= 60V, V
GS
= 0V, T
C
= 150
o
C
–
–
500
±100
V
GS
= ±20V, V
DS
= 0V
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 75A
V
DS
= 10V, I
D
= 75A
2.5
3.5
3.2
169
4.5
4.0
–
V
m
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
–
–
Dynamic Characteristics
C
iss
Input Capacitance
–
–
–
–
–
–
6190
900
385
102
32
8235
1195
580
133
–
pF
pF
pF
nC
nC
nC
V
DS
= 25V, V
GS
= 0V
f = 1MHz
C
oss
C
rss
Q
g(tot)
Q
gs
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
V
DS
= 48V, I
D
= 75A
GS
= 10V
(Note 4)
Q
gd
32
–
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
–
–
–
–
30
40
55
24
70
90
ns
ns
ns
ns
V
DD
= 30V, I
D
= 75A
GS
= 10V, R
GEN
= 4.7
Ω
V
120
58
(Note 4)
Drain-Source Diode Characteristics
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
168
672
1.3
–
A
A
I
SM
V
SD
t
rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0V, I
SD
= 75A
–
V
41
47
ns
nC
V
GS
= 0V, I
SD
= 75A
dI
F
/dt = 100A/
μ
s
Q
rr
Reverse Recovery Charge
–
Notes:
1: Repetitive
Rating: Pulse width limited by maximum junction temperature
2: L
= 0.31mH, I
= 75A, V
= 50V, R
= 25
Ω
, Starting T
= 25°C
AS
DD
G
J
3:
I
≤
75A, di/dt
≤
200A/
μ
s, V
≤
BV
, Starting T
= 25°C
SD
DD
DSS
J
4: Essentially
Independent of Operating Temperature Typical Characteristics
FDI040N06 Rev. C0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1000
1000
V
GS
=
15.0V
*Notes:
1. V
DS
= 10V
10.0V
8.0 V
7.0 V
2. 250
μ
s Pulse Test
100
6.5 V
100
6.0 V
5.5 V
175
o
C
10
25
o
C
10
1
-55
o
C
*Notes:
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
1
0.1
0.01
6
2
3
4
5
6
7
8
0.1
1
V
GS
,Gate-Source Voltage[V]
V
DS
,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
4.0
3.5
3.0
2.5
1000
175
o
C
V
GS
= 10V
100
25
o
C
V
GS
= 20V
10
*Notes:
1. V
GS
= 0V
*Note: T
C
= 25
o
C
2. 250
μ
s Pulse Test
1
0.2
0
60
120
180
240
300
360
0.4
0.6
0.8
1.0
1.2
I
D
, Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
10000
V
DS
= 12V
C
iss
V
DS
= 30V
8
6
4
2
0
V
DS
= 48V
1000
C
oss
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
C
C
C
= C
+ C
(
C =
shorted
)
gs gd
ds
iss
= C
+ C
ds
= C
gd
oss
rss
gd
*Note: I
D
= 75A
80 100
100
0.1
0
20
40
60
120
1
10
30
Q
g
, Total Gate Charge [nC]
V
DS
, Drain-Source Voltage [V]
FDI040N06 Rev. C0
3
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.4
1.2
1.1
1.0
2.0
1.6
1.2
0.9
0.8
*Notes:
1. V
GS
= 10V
*Notes:
1. V
GS
= 0V
2. I
D
= 75A
2. I
D
= 10mA
0.4
-75
0.8
-80
-25
25
75
125
175 225
-40
0
40
80
120 160 200
T
J
, Junction Temperature
[
o
C
]
T
J
, Junction Temperature
[
o
C
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
180
144
108
100
μ
s
100
1ms
10ms
10
Limited by package
72
100ms
Operation in This Area
is Limited by R
DS(on)
1 s
*Notes:
1. T
C
= 25
o
C
2. T
J
= 175
o
C
1
36
0
3. Single Pulse
0.1
0.1
25
50
75
100
125
150
175
1
10
100
T
C
, Case Temperature
[
o
C
]
V
DS
, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
0.05
P
DM
0.02
0.01
t
1
t
2
0.01
*Notes:
Single pulse
1. Z
θ
JC
(t) = 0.65
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
– T
C
= P
DM
* Z
θ
JC
(t)
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Rectangular Pulse Duration [sec]
FDI040N06 Rev. C0
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDI040N06 Rev. C0
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
V
DS
_
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by
R
G
• I
SD
controlled by pulse period
Gate Pulse Width
————————–
V
GS
D =
Gate Pulse Period
10V
( Driver )
I
FM
, Body Diode Forward Current
I
SD
di/dt
( DUT )
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
V
DS
( DUT )
V
DD
Body Diode
Forward Voltage Drop
FDI040N06 Rev. C0
6
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
F-PFS™
PowerTrench
®
PowerXS™
The Power Franchise
®
FRFET
®
®
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AX-CAP™*
Global Power Resource
SM
Green Bridge™
Green FPS™
Green FPS™ e-Series™
G
max
™
Programmable Active Droop™
BitSiC
®
QFET
®
TinyBoost™
TinyBuck™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
QS™
Quiet Series™
RapidConfigure™
™
TinyCalc™
TinyLogic
®
GTO™
IntelliMAX™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Current Transfer Logic™
DEUXPEED
®
Dual Cool™
EcoSPARK
®
EfficentMax™
ESBC™
ISOPLANAR™
Marking Small Speakers Sound Louder
SignalWise™
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
Solutions for Your Success™
SPM
®
TranSiC
®
TriFault Detect™
TRUECURRENT
®
*
μ
SerDes™
MicroPak™
STEALTH™
®
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
SuperFET
®
Fairchild
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
®
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UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
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XS™
Fairchild Semiconductor
®
FACT Quiet Series™
FACT
®
FAST
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OptoHiT™
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®*
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*
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tm
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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life
support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A
critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I61
FDI040N06 Rev.
C0
8
