onsemi-FDI8442
| Part # | onsemi-FDI8442 |
Download  | onsemi-FDI8442 |
August 2007
FDI8442
N-Channel PowerTrench
MOSFET
®
40V, 80A, 2.9m
Ω
Features
Applications
Automotive Engine Control
Typ r
DS(on)
= 2.3m
Ω
at V
GS
= 10V, I
D
= 80A
Powertrain Management
Solenoid and Motor Drivers
Electronic Steering
Typ Q
g(10)
= 181nC at V
GS
= 10V
Low Miller Charge
Low Q
rr
Body Diode
Integrated Starter / Alternator
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Distributed Power Architectures and VRMs
Primary Switch for 12V Systems
RoHS Compliant
©2007 Fairchild Semiconductor Corporation
1
FDI8442 Rev
. A
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
40
V
V
GS
±20
V
Drain Current Continuous (T
C
<158
o
C, V
GS
= 10V)
Drain Current Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 62
o
C/W)
Pulsed
80
23
I
D
A
See Figure 4
720
E
AS
P
D
Single Pulse Avalanche Energy
(Note 1)
mJ
W
W/
o
C
o
C
Power Dissipation
Derate above 25
o
C
254
1.7
T
J
, T
STG
Operating and Storage Temperature
-55 to +175
Thermal Characteristics
R
θ
JC
Thermal Resistance Junction to Case
0.59
62
o
C/W
o
C/W
R
θ
JA
Thermal Resistance Junction to Ambient
(Note 2)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
50 units
FDI8442
FDI8442
TO-262
Tube
N/A
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
μ
A, V
GS
= 0V
40
–
–
–
–
–
–
V
1
V
DS
= 32V
I
DSS
μ
A
nA
V
GS
= 0V
T
J
= 150°C
–
250
±
100
I
GSS
V
GS
=
±
20V
–
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
2
–
2.9
2.3
4
V
I
D
= 80A, V
GS
= 10V
2.9
r
DS(on
)
Drain to Source On Resistance
I
D
= 80A, V
GS
= 10V,
T
J
= 175°C
m
Ω
–
3.9
5.0
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
–
–
–
–
–
–
–
–
–
12200
1040
640
1.0
–
pF
pF
pF
Ω
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
–
–
V
GS
= 0.5V, f = 1MHz
V
GS
= 0 to 10V
–
235
30
–
Q
g(TOT)
Total Gate Charge at 10V
181
23
nC
nC
nC
nC
nC
Q
g(TH)
Q
gs
Threshold Gate Charge
V
GS
= 0 to 2V
V
DD
= 20V
D
= 80A
I
g
= 1mA
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
I
49
Q
gs2
Q
gd
26
–
41
–
FDI8442 Rev
. A
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t
(on)
t
d(on)
t
r
Turn-On Time
–
–
–
–
–
–
–
62
ns
ns
ns
ns
ns
ns
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
19.5
19.3
57
–
–
V
V
DD
= 20V, I
D
= 80A
GS
= 10V, R
GS
= 2
Ω
t
d(off)
t
f
–
–
17.2
–
t
off
118
Drain-Source Diode Characteristics
I
SD
= 80A
–
–
–
–
0.9
0.8
49
1.25
1.0
64
V
V
V
SD
Source to Drain Diode Voltage
I
SD
= 40A
t
rr
Reverse Recovery Time
Reverse Recovery Charge
I
F
= 75A, di/dt = 100A/
μ
s
I
F
= 75A, di/dt = 100A/
μ
s
ns
nC
Q
rr
70
91
Notes:
o
1:
Starting T
= 25
C, L = 0.35mH, I
= 64A
J
AS
2:
Pulse width = 100s.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
For
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDI8442 Rev
. A
3
Typical Characteristics
300
250
200
150
100
50
1.2
1.0
0.8
0.6
0.4
0.2
0.0
CURRENT LIMITED
BY PACKAGE
V
GS
= 10V
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE
(
o
C
)
T
C
, CASE TEMPERATURE
(
o
C
)
Figure 1.
Normalized Power Dissipation vs Case
Temperature
Figure 2.
Maximum Continuous Drain Current vs
Case Temperature
2
DUTY CYCLE – DESCENDING ORDER
1
D = 0.50
0.20
0.10
P
DM
0.1
0.01
1E-3
0.05
0.02
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T
= P
x Z
x R
+ T
J
DM
θ
JC
θ
JC C
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR
PULSE DURATION(s)
Figure 3.
Normalized Maximum Transient Thermal Impedance
10000
T
C
= 25
o
C
V
GS
= 10V
TRANSCONDUCTANCE
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
MAY LIMIT CURRENT
IN THIS REGION
CURRENT AS FOLLOWS:
1000
100
10
175 – T
C
I = I
25
150
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION(s)
Figure 4.
Peak Current Capability
FDI8442 Rev
. A
4
Typical Characteristics
500
100
4000
1000
If R = 0
= (L)(I
)/(1.3*RATED BV
t
AV
– V
)
AS
DSS
DD
If R
≠
0
10us
t
= (L/R)ln[(I
*R)/(1.3*RATED BV
– V
) +1]
DSS DD
AV
AS
100us
100
STARTING T
J
= 25
o
C
10
10
1
LIMITED
BY PACKAGE
STARTING T
J
= 150
o
C
1ms
1
SINGLE PULSE
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
T
J
= MAX RATED
10ms
DC
o
T
C
= 25
C
0.1
5000
1000
0.01
0.1
1
10
100
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
t
AV
, TIME IN AVALANCHE (ms)
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6.
Unclamped Inductive Switching
C
apability
Figure 5.
Forward Bias Safe Operating Area
160
160
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
DD
= 5V
120
V
GS
= 5V
120
V
GS
= 4.5V
T
J
= 175
o
C
80
80
T
J
= 25
o
C
T
J
= -55
o
C
40
40
V
GS
= 4V
0
0
2.0
0
1
2
3
4
5
2.5
3.0
3.5
4.0
4.5
5.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 7.
Transfer Characteristics
Figure 8.
Saturation Characteristics
50
1.8
PULSE DURATION = 80
μ
s
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
0
T
J
= 175
o
C
T
J
= 25
o
C
I
D
= 80A
V
GS
= 10V
4
5
6
7
8
9
10
-80
-40
0
40
80
120
160
200
o
T
J
, JUNCTION TEMPERATURE
(
C
)
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
Figure 9.
Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10.
Normalized Drain to Source On
Resistance vs Junction Temperature
FDI8442 Rev
. A
5
Typical Characteristics
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
I
D
= 250
μ
A
V
GS
=
V
DS
I
D
=
250
μ
A
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE
(
o
C
)
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 11.
Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 12.
Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
40000
10
C
iss
I
D
= 80A
8
10000
V
DD
= 15V
V
DD
= 20V
C
oss
6
V
DD
= 25V
1000
4
2
0
C
rss
f = 1MHz
V
GS
= 0V
100
0.1
1
10
50
0
50
100
150
200
V
DS
, DRAIN TO SOURCE VOLTAGE
(
V
)
Q
g
,
GATE CHARGE(nC)
Figure 13.
Capacitance vs Drain to Source
Voltage
Figure 14.
Gate Charge vs Gate to Source Voltage
FDI8442 Rev
. A
6
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life
support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in a significant injury to the user.
2. A
critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.
Rev. I31
FDI8442 Rev
. A
7
