onsemi-FDM3300NZ
| Part # | onsemi-FDM3300NZ |
Download  | onsemi-FDM3300NZ |
January 2007
FDM3300NZ
tm
®
Monolithic Common Drain N-Channel 2.5V Specified
PowerTrench MOSFET
20V, 10A, 23m
Ω
Features
General Description
Max r
DS(on)
= 23m
Ω
at V
GS
= 4.5V, I
D
= 10A
Max r
DS(on)
= 28m
Ω
at V
GS
= 2.5V, I
D
= 9A
>2000V ESD protection
This dual N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced PowerTrench
®
process to
optimize the r
DS(on)
@ V
GS
= 2.5V on special MLP lead frame
with all the drains on one side of the package.
Low Profile – 1mm maximum – in the new package MLP
3.3×3.3 mm
RoHS Compliant
Application
Li-lon Battery Pack
5
6
7
8
4
3
2
1
4
3
5
G2
S2
G1
S1
D2
D 2
D 2
D 1
D2
6
D 1
D1
D1
7
8
2
1
G 2
S 2
G 1
S1
Power 33
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Rating
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
20
±12
V
V
(Note 1a)
10
I
D
A
40
P
D
Power Dissipation
(Steady State)
(Note 1a)
(Note 1b)
2.1
W
0.9
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
60
°C/W
135
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
8mm
Quantity
3300N
FDM3300NZ
Power 33
7”
3000 units
1
©2006 Fairchild Semiconductor Corporation
FDM3300NZ Rev.F
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
I
D
= 250
μ
A, V
GS
= 0V
20
BV
DSS
Drain to Source Breakdown Voltage
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25°C
10.7
mV/°
C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 16V,
V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
1
μ
A
μ
A
±10
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
0.6
0.9
-3
1.5
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25°C
mV/°C
V
GS
= 4.5V,
I
D
= 10A
16
20
22
35
23
28
31
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 2.5V,
I
D
= 9A
m
Ω
V
GS
= 4.5V,
I
D
= 10A, T
J
= 125°C
V
DS
= 5V,
I
D
= 10A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1210
330
180
2.3
1610
440
pF
pF
pF
Ω
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 10
V
,
V
GS
= 0V, f = 1MHZ
f = 1MHz
270
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
10
14
26
13
12
2
20
25
42
23
17
ns
ns
ns
ns
nC
nC
V
DD
= 10
V
,
I
D
= 1.0A
V
GS
= 4.5V, R
GEN
= 6.0
Ω
Turn-Off Delay Time
Fall Time
Q
g
T
o
tal Gate Charge
Gate to Source Gate Charge
V
GS
= 4.5V
V
DD
= 10V
I
D
= 10A
Q
gs
Q
gd
Gate to Drain “Miller” Charge
4
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Source to Drain Diode
Forward Voltage
Reverse Recovery Time
V
GS
= 0V, I
S
= 2.0A
(Note 2)
0.7
20
6
1.2
V
ns
nC
I
F
= 10A, di/dt = 100A/
μ
s
Q
rr
Reverse Recovery Charge
Notes:
2
1:
R
is determined with the device mounted on a 1 in
oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while
R
is determined by the
θ
JA
θ
JA
θ
JC
user’s board design.
2
(a)
R
(b)
R
= 60°C/W when mounted on a 1 in
pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
= 135°C/W when mounted on a minimum pad of 2 oz copper.
θ
JA
θ
JA
b. 135°C/W when mounted on
a
minimum pad of 2 oz copper
a. 60°C/W when mounted
on
a 1 in
pad of
2 oz
copper
2
2:
Pulse
T
e
st: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
2
FDM3300NZ Rev.F
Typical Characteristics
T
J
= 25°C unless otherwise noted
40
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
= 4.5V
35
V
GS
= 2.5V
V
GS
= 2.0V
30
25
20
15
10
5
V
GS
= 3.0V
V
GS
= 3.5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
V
GS
= 2.5V
V
GS
=3.0V
V
GS
= 3.5V
V
GS
= 2.0V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
V
GS
= 4.5V
0
0.0
0.5
1.0
1.5
2.0
0
5
10
15
20
I
D
, DRAIN CURRENT(A)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1.
On Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
60
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
I
D
= 5.0A
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
I
D
= 10A
V
GS
= 4.5V
T =
125
o
C
J
T =
25
o
C
J
1
2
3
4
5
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
40
40
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
V
GS
= 0V
10
30
20
10
0
V
DD
= 5V
1
T
J
= 125
o
C
T
J
= 25
o
C
0.1
0.01
1E-3
1E-4
T
J
= 125
o
C
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
3
FDM3300NZ Rev.F
Typical Characteristics
T
J
= 25°C unless otherwise noted
5
3000
1000
I
D
= 10A
4
3
2
1
0
V
DD
= 5V
C
iss
V
DD
= 10V
C
oss
V
DD
= 15V
C
rss
f = 1MHz
GS
= 0V
100
60
V
0.1
1
10
0
3
6
9
12
15
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE(nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
100
500
100
r
DS(on)
LIMITED
V
GS
=10V
FOR TEMPERATURES
o
ABOVE 25
C DERATE PEAK
100us
10
1
CURRENT AS FOLLOWS:
150
–
T
A
1ms
I = I
———————–
25
125
10ms
o
10
T
= 25
C
A
100ms
1s
SINGLE PULSE
SINGLE PULSE
θ
JA
= 135
o
C/W
0.1
T
= MAX RATED
= 135
o
C/W
J
10s
DC
R
R
T
θ
JA
1
= 25
o
C
A
0.5
0.01
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
10
2
10
3
60
0.1
1
10
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figur
e
9
. Forward Bias Safe
Operating Area
Figur
e
1
0. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
0.1
DM
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
R
θ
JA
= 135
o
C/W
1
2
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
1E-3
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION(s)
Figure 11.
Transient Thermal Response Curve
4
FDM3300NZ Rev.F
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
OCX
™
OCXPro
™
SILENT SWITCHER
®
SMART START™
SPM™
UniFET™
VCX™
Wire™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT
™
DOME™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
HiSeC™
Stealth™
I
2
C™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic
®
TINYOPTO™
TruTranslation™
UHC
®
i-Lo
™
ImpliedDisconnect
™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX
™
MSXPro
™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
®
QFET
®
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT
®
FAST
®
FASTr™
FPS™
FRFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure
™
RapidConnect
™
µSerDes
™
Across the board. Around the world.
™
The Power Franchise
®
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™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDM3300NZ Rev.
F
6
