onsemi-FDMC2514SDC
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FDMC2514SDC
N-Channel Dual Cool
TM
33 PowerTrench
®
SyncFET
TM
25 V, 40 A, 3.5 m
Ω
General Description
This
Semiconductor’s
N-Channel
MOSFET
advanced
is
produced
using
process.
ON
PowerTrench
®
Features
Advancements in both silicon and Dual Cool
TM
package
technologies have been combined to offer the lowest r
DS(on)
Dual Cool
TM
Top Side Cooling PQFN package
Max r
DS(on)
= 3.5 m
Ω
at V
GS
= 10 V, I
D
= 22.5 A
Max r
DS(on)
= 4.7 m
Ω
at V
GS
= 4.5 V, I
D
= 18 A
High performance technology for extremely low r
DS(on)
SyncFET Schottky Body Diode
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
T
e
lecom Secondary Side Rectification
RoHS Compliant
High End Server/Workstation Vcore Low Side
Pin 1
G
S
S
D
D
D
G
5
6
7
8
4
3
2
1
S
S
S
S
D
D
D
D
D
Dual Cool
TM
33
Top
Bottom
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
25
±20
V
V
(Note 4)
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
T
C
= 25 °C
T
C
= 25 °C
T
A
= 25 °C
40
106
I
D
A
(Note 1a)
24
-Pulsed
200
E
AS
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(Note 3)
(Note 5)
84
mJ
dv/dt
2.0
V/ns
T
C
= 25 °C
T
A
= 25 °C
60
P
D
W
Power Dissipation
(Note 1a)
3.0
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JC
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case
(
T
o
p Source)
(Bottom Drain)
(Note 1a)
5.8
2.1
42
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
105
17
°C/W
(Note 1i)
(Note 1j)
26
(Note 1k)
12
Package Marking and Ordering Information
Device Marking
Device
Package
Dual Cool
TM
33
1
Reel Size
Tape Width
12 mm
Quantity
2514S
FDMC2514SDC
13’’
3000 units
©2010
Semiconductor Components Industries, LLC.
October-2017,
Rev.
2
Publication Order Number:
FDMC2514SDC/D
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 1 mA, V
GS
= 0 V
D
= 10 mA, referenced to 25 °C
V
DS
= 20 V, V
GS
= 0 V
25
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
21
mV
/°
C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
500
100
μ
A
Gate to Source Leakage Current, Forward
V
GS
= 20 V, V
DS
= 0 V
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 1 mA
D
= 10 mA, referenced to 25 °C
GS
= 10 V, I
D
= 22.5 A
1.2
1.7
-5
3.0
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
mV/°C
V
2.5
3.6
3.5
122
3.5
4.7
4.5
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 4.5 V, I
D
= 18 A
m
Ω
V
GS
= 10 V, I
D
= 22.5 A, T
J
= 125 °C
V
DS
= 5 V, I
D
= 22.5 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
2031
596
134
1.1
2705
795
205
2.4
pF
pF
pF
Ω
V
DS
= 13 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
11
3.6
26
3
22
10
41
10
44
20
ns
ns
V
DD
= 13 V, I
D
= 22.5 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
ns
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
V
GS
= 0 V to 4.5 V
31
14
6.5
3.9
nC
nC
nC
nC
Q
g
V
DD
= 13 V,
I
D
= 22.5 A
Q
gs
Q
gd
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 22.5 A
(Note 2)
(Note 2)
0.79
0.47
24
1.2
0.8
39
V
SD
Source to Drain Diode
Forward Voltage
V
V
GS
= 0 V, I
S
= 2 A
t
rr
Reverse Recovery Time
ns
I
F
= 22.5 A, di/dt = 300 A/
μ
s
Q
rr
Reverse Recovery Charge
19
34
nC
2
Thermal Characteristics
R
θ
JC
R
θ
JC
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case
(
T
o
p Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
(Note 1e)
(Note 1f)
5.8
2.1
42
105
29
40
19
23
30
79
17
26
12
16
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
°C/W
(Note 1g)
(Note 1h)
(Note 1i)
(Note 1j)
(Note 1k)
(Note 1l)
NOTES:
1. R
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
is guaranteed by design while R
is determined
θ
CA
θ
JA
θ
JC
by the user’s board design.
b. 105 °C/W when mounted on
a minimum pad of 2 oz copper
a. 42 °C/W when mounted on
a 1 in
pad of
2 oz
copper
2
2
c. Still air, 20.9×10.4×12.7mm Aluminum Heat Sink, 1 in
pad of 2 oz copper
d. Still air, 20.9×10.4×12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
e. Still air, 45.2×41.4×11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in
pad of 2 oz copper
f. Still air, 45.2×41.4×11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2
g. 200FPM Airflow, No Heat Sink,1 in
pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
2
i. 200FPM Airflow, 20.9×10.4×12.7mm Aluminum Heat Sink, 1 in
pad of 2 oz copper
j. 200FPM Airflow, 20.9×10.4×12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
k. 200FPM Airflow, 45.2×41.4×11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in
pad of 2 oz copper
l. 200FPM Airflow, 45.2×41.4×11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
3. E
of 84 mJ is based on starting T
= 25
°
C, L = 1 mH, I
= 13 A, V
= 23
V
, V
=
1
0 V. 100% test at L = 0.3 mH, I
= 20 A.
AS
J
AS
DD
GS
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
o
5. I
≤
22.5 A, di/dt
≤
200 A/
μ
s, V
≤
BV
, Starting T
= 25
C.
J
SD
DD
DSS
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
8
7
6
5
4
3
2
1
0
120
V
GS
= 10 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 3 V
V
GS
= 3.5 V
90
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3 V
60
V
GS
= 3.5 V
V
GS
= 4.5 V
30
V
GS
= 2.5 V
V
GS
= 10 V
0
0
30
60
I
D
,
DRAIN CURRENT (A)
90
120
0
1
2
3
4
5
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
Figure 1.
On-Region Characteristics
1.5
12
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 22.5 A
I
D
= 22.5 A
V
GS
= 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
10
8
6
T
J
= 125
o
C
4
2
T
J
= 25
o
C
0
-75 -50 -25
0
25 50 75
100 125 150
2
4
6
8
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
120
200
100
V
GS
= 0 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
10
90
60
30
0
T
J
= 125
o
C
V
DS
= 5 V
1
T
J
= 25
o
C
T
J
= 125
o
C
0.1
T
J
= 25
o
C
T
J
= -55
o
C
0.01
0.001
T
J
= -55
o
C
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted
3000
1000
10
I
D
= 22.5 A
8
C
iss
V
DD
= 16 V
V
DD
= 10 V
6
4
2
0
V
DD
= 13 V
C
oss
f = 1 MHz
100
60
C
rss
V
GS
= 0 V
30
0.1
1
10
0
4
8
12
16
20
24
28
32
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
120
80
40
0
30
R
θ
JC
= 2.1
o
C/W
V
GS
= 10 V
T
J
= 25
o
C
10
T
J
= 100
o
C
V
GS
= 4.5 V
T
J
= 125
o
C
Limited by Package
50
1
0.01
0.1
1
10
100
25
75
100
125
150
T
C
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs
Case Temperature
300
100
2000
SINGLE PULSE
R
θ
JA
= 105
o
C/W
1000
100
10
100 us
T
A
= 25
o
C
1ms
10
1
10 ms
100 ms
1 s
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
0.1
0.01
10 s
DC
R
θ
JA
= 105
o
C/W
A
= 25
o
C
T
1
0.5
10
-4
10
-3
10
-2
t, PULSE WIDTH (sec)
10
-1
1
10
0.01
0.1
1
10
100
100 1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
5
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
P
0.02
0.01
DM
t
0.01
1
t
2
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
1
2
R
θ
JA
= 105
o
C/W
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
0.001
0.0005
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
6
Typical Characteristics
(continued)
SyncFET Schottky body diode
Characteristics
ON Semiconductor
’s SyncFET process embeds a Schottky
diode in parallel with
PowerTrench MOSFET. This diode
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
exhibits
similar
characteristics to
a
discrete external
Schottky diode in parallel with
a
MOSFET. Figure 13
characteristic of the
shows
the
reverse
recovery
FDMC2514SDC.
10
-2
25
20
15
10
5
T
J
= 125
o
C
10
-3
10
-4
10
-5
10
-6
T
J
= 100
o
C
di/dt = 300 A/
μ
s
0
T
J
= 25
o
C
-5
0
50
100
150
200
0
5
10
15
20
25
TIME (ns)
V
DS
, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus
drain-source voltage
Figure 13. FDMC2514SDC SyncFET body
diode reverse recovery characteristic
7
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