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July 2016
FDMC2610
N-Channel UltraFET Trench
®
MOSFET
200V, 9.5A, 200m
Ω
Features
General Description
Max r
DS(on)
= 200m
Ω
at V
GS
= 10V, I
D
= 2.2A
Max r
DS(on)
= 215m
Ω
at V
GS
= 6V, I
D
= 1.5A
Low Profile – 1mm Max in a Power 33
RoHS Compliant
This N-Channel MOSFET is
Fairchild Semiconductor‘s
process. It has been optimized for power management
applications.
a
rugged gate version
of
advanced
Power
Trench
Application
DC – DC Conversion
Bottom
Top
D
D
D
D
8
2
7
6
5
G
S
D
D
D
D
5
6
7
8
4
3
2
1
S
S
G S
S
S
1
3
4
Pin 1
MLP 3.3×3.3
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted.
Symbol
V
DS
V
GS
Parameter
Ratings
200
±20
9.5
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
Drain Current
-Continuous (Silicon limited)
T
C
= 25°C
I
D
-Continuous
-Pulsed
T
A
= 25°C
(Note 1a)
2.2
A
15
E
AS
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
6
42
mJ
W
T
C
= 25°C
P
D
Power Dissipation
T
A
= 25°C
(Note 1a)
2.1
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3
°C/W
(Note 1a)
60
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMC2610
FDMC2610
MLP 3.3×3.3
3000 units
1
©2012 Fairchild Semiconductor Corporation
FDMC2610 Rev.1.6
Electrical Characteristics
T
J
= 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
200
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25°C
199
mV/°
C
V
DS
= 160V,
1
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
μ
A
V
GS
= 0V
T
J
= 125°C
100
±100
V
GS
= ±20V, V
DS
= 0V
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
2
3.2
4
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25°C
-9.9
mV/°C
V
GS
= 10V,
I
D
= 2.2A
175
188
347
7
200
215
397
r
DS(on)
Drain to Source On Resistance
V
GS
= 6V,
I
D
= 1.5A
m
Ω
V
GS
= 10
V
,
I
D
= 2.2A , T
J
= 125°C
V
DS
= 5V,
I
D
= 2.2A
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
720
41
960
55
pF
pF
pF
Ω
V
DS
= 100V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
12
20
f = 1MHz
0.7
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
17
13
31
24
47
29
18
ns
ns
V
DD
= 100
V
,
I
D
= 2.2A
V
GS
= 10V, R
GEN
= 24
Ω
Turn-Off Delay Time
Fall Time
29
ns
16
ns
Q
g(TOT)
Q
gs
Q
gd
T
o
tal Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0V to 10V
12.3
3
nC
nC
nC
V
DD
= 100V
I
D
= 2.2A
3.6
Drain-Source Diode Characteristics
V
SD
t
rr
Source to Drain Diode
Forward Voltage
Reverse Recovery Time
V
GS
= 0V, I
S
= 2.2A
(Note 2)
0.8
69
1.2
104
171
V
ns
nC
I
F
= 2.2A, di/dt = 100A/
μ
s
Q
rr
Reverse Recovery Charge
114
Notes:
2
1:
R
is determined with the device mounted on a 1in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while
R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
b. 135°C/W when mounted on
minimum pad of 2 oz copper
a
a. 60°C/W when mounted
on
a 1 in
pad of
2 oz
copper
2
2:
Pulse
T
e
st: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
3. Starting T
= 25
°
C; N-ch: L = 3 mH, I
= 2 A, V
= 200 V, V
= 10 V.
J
AS
DD
GS
2
FDMC2610 Rev.1.6
Typical Characteristics
T
J
= 25°C unless otherwise noted.
1.8
1.6
1.4
1.2
1.0
0.8
15
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
= 7V
V
GS
= 4.5V
GS
V
= 10V
GS
V
GS
= 5V
V
GS
= 6V
10
5
V
GS
= 7V
V
= 6V
GS
V
= 5V
GS
V
= 4.5V
V
GS
= 10V
GS
0
0
3
6
9
12
15
0
1
2
3
I
D
, DRAIN CURRENT(A)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
600
500
400
300
200
100
I
= 1.4A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
D
T
A
= 150
o
C
T
A
= 25
o
C
I
=2.2A
D
V
= 10V
GS
-75 -50 -25
0
25 50 75
100 125 150
4
5
6
7
8
9
10
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
20
10
12
9
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 0V
T =
150
o
C
J
1
0.1
T =
150
o
C
J
T
J
= 25
o
C
6
= -55
o
C
3
T
J
0.01
T
J
= 25
o
C
T
J
= -55
o
C
0
1E-3
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V ,
BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
3
FDMC2610 Rev.1.6
Typical Characteristics
T
J
= 25°C unless otherwise noted.
1000
100
10
10
C
C
iss
V
=50V
DD
8
6
4
2
0
V
= 100V
DD
V
= 150V
DD
oss
f = 1MHz
= 0V
C
rss
V
GS
0.1
1
10
100
0
3
6
9
12
15
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE(nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
3
10
8
6
4
2
0
V
= 10V
GS
2
T
J
= 25
o
C
V
GS
= 6V
R
θ
JC
= 3
o
C/W
50
1
0.01
0.1
1
25
75
100
125
150
T
C
, CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Case Temperature
500
40
10
V
GS
= 10V
r
DS(on)
LIMITED
100
10
100us
1
1ms
10ms
0.1
100ms
1s
SINGLE PULSE
T
= MAX RATED
=135
O
C
J
SINGLE PULSE
=135
O
C
0.01
R
T
θ
JA
1
DC
= 25
O
C
R
A
θ
JA
0.5
0.001
0.1
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
10
2
10
3
700
1
10
V
DS
, DRAIN to SOURCE VOLTAGE (V)
100
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
4
FDMC2610 Rev.1.6
Typical Characteristics
T
J
= 25°C unless otherwise noted.
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.1
P
DM
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
1
2
PEAK T
= P
x R
x r(t) + T
J
DM
θ
JA
A
0.003
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION(s)
Figure 13.
Transient Thermal Response Curve
5
FDMC2610 Rev.1.6
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
(1.70)
3.30
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
SIDE VIEW
0.65
0.42(8X)
2X
1.95
ꢀꢁꢅꢃꢀꢁꢀꢃ
RECOMMENDED LAND PATTERN
0.10 C
0.08 C
ꢀꢁꢂꢃꢀꢁꢀꢃ
ꢀꢁꢀꢄꢃꢀꢁꢀꢄꢃ
NOTES:
C
SEATING
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO-229
PLANE
B. DIMENSIONS
ARE IN MILLIMETERS.
ꢆꢁꢆꢀꢀꢁꢀꢃ
C. DIMENSIONS
AND TOLERANCES PER
ASME Y14.5M, 2009.
2.27+0.05
(0.50)4X
PIN #1 IDENT
(0.79)
D. LAND
PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
ꢀꢁꢃꢀꢀꢁꢀꢃꢇꢊ;ꢉ
E. DRAWING
FILENAME: MKT-MLP08Srev3.
(0.35)
(1.15)
ꢆꢁꢆꢀꢀꢁꢀꢃ
R0.15
ꢄꢁꢀꢀꢀꢁꢀꢃ
ꢀꢁꢆꢀꢀꢁꢀꢃꢇꢆ;ꢉ
8
5
ꢀꢁꢆꢃꢀꢁꢀꢃꢇꢈ;ꢉ
0.65
0.10
C A B
1.95
0.05
C
BOTTOM VIEW
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
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Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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