onsemi-FDMC3612
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FDMC3612
N-Channel Power Trench
®
MOSFET
G
T
h
e
i
s
neral Description
N-Channel
MOSFET
is
produced using
ON
Semiconductor‘s advanced
Power Trench
®
process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
100 V, 12 A, 110 m
Ω
Features
Max r
DS(on)
= 110 m
Ω
at V
GS
= 10 V, I
D
= 3.3 A
Max r
DS(on)
= 122 m
Ω
at V
GS
= 6 V, I
D
= 3.0 A
Low Profile – 1 mm max in Power 33
100% UIL
T
e
sted
Applications
DC – DC Conversion
PSE Switch
RoHS Compliant
Top
Bottom
8
7
6
5
D
D
D
D
4
3
2
1
G
S
S
S
D
D
D
D
5
6
7
8
1
2
G
S
S
S
3
4
MLP 3.3×3.3
MOSFET Maximum Ratings
T
C
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
100
V
V
±20
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
T
C
= 25 °C
T
C
= 25 °C
T
A
= 25 °C
16
12
I
D
A
(Note 1a)
(Note 3)
3.3
-Pulsed
15
E
AS
Single Pulse Avalanche Energy
Power Dissipation
32
35
mJ
W
T
C
= 25 °C
T
A
= 25 °C
P
D
Power Dissipation
(Note 1a)
2.3
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to + 150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3.5
53
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12 mm
Quantity
FDMC3612
FDMC3612
Power 33
3000 units
©2012
Semiconductor Components Industries, LLC.
October-2017,
Rev.
3
Publication Order Number:
FDMC3612/D
1
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
100
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25 °C
109
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 80 V, V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
1
μ
A
±100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
2.5
-7
4.0
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25 °C
GS
= 10 V,
I
D
= 3.3 A
mV/°C
V
92
98
110
122
212
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 6 V,
I
D
= 3.0 A
m
Ω
V
GS
= 10
V
,
I
D
= 3.3 A,
T
J
= 125 °C
V
DS
= 10
V
,
I
D
= 3.3 A
177
13
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
662
40
880
55
pF
pF
pF
Ω
V
DS
= 50 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
23
35
1.3
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
7.4
2.8
19
15
10
34
10
21
12
ns
ns
V
DD
= 50 V, I
D
= 3.3 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
ns
2
ns
Q
g(TOT)
Q
g(TOT)
Q
gs
T
o
tal Gate Charge
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
14.4
7.9
2.3
3.7
nC
nC
nC
nC
V
DD
= 50 V,
I
D
= 3.3 A
V
GS
= 0 V to 5 V
Q
gd
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 3.3 A
(Note 2)
(Note 2)
0.88
0.77
34
1.2
1.2
55
V
SD
Source to Drain Diode
Forward Voltage
V
V
GS
= 0 V, I
S
= 2 A
t
rr
Reverse Recovery Time
ns
I
F
= 3.3 A, di/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
37
60
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
b) 125 °C/W when mounted
on a
minimum pad of 2 oz
copper
a) 53
°C/W when mounted
o
n
a1
i
n pa
d
o
f
2
o
z copper
2
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3. Starting T
= 25
°
C; N-ch: L = 1 mH, I
= 8 A, V
= 90 V, V
= 10 V.
J
AS
DD
GS
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted
3.0
2.5
2.0
1.5
1.0
0.5
15
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
μ
s
V
GS
= 10 V
V
GS
= 3.5 V
DUTY CYCLE = 0.5% MAX
12
V
GS
= 4.5 V
V
GS
= 6 V
V
GS
= 4 V
V
GS
= 4 V
9
6
3
0
V
GS
= 4.5 V
V
GS
= 3.5 V
V
GS
= 10 V
12
V
GS
= 6 V
0
3
6
9
15
0
1
2
3
4
5
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
Figure 1.
On Region Characteristics
400
2.4
I
D
= 3.3 A
GS
= 10 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
D
= 3.3 A
V
300
200
100
0
T
J
= 125
o
C
T
J
= 25
o
C
2
4
6
8
10
-75 -50 -25
0
25 50 75
100 125 150
V
GS
,
GATE TO SOURCE VOLTAGE (V)
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
15
20
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
T
J
= 150
o
12
9
C
V
DS
= 5 V
1
T
J
= 25
o
C
T
J
= 150
o
C
0.1
6
T
J
= -55
o
C
T
J
= 25
o
C
0.01
0.001
3
T
J
= -55
o
C
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
10
1000
100
10
I
D
= 3.3 A
C
iss
8
V
DD
= 50 V
6
V
DD
= 25 V
V
DD
= 75 V
C
oss
4
2
0
f = 1 MHz
= 0 V
V
GS
C
rss
0.1
1
10
100
0
2
4
6
8
10
12
14
16
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
12
9
30
V
GS
= 10 V
10
V
GS
= 6 V
T
J
= 25
o
C
T
J
= 100
o
C
6
T
J
= 125
o
C
3
R
θ
JC
= 3.5
o
C/W
1
0.001
0
25
50
75
100
125
150
0.01
0.1
1
10
T
C
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Case Temperature
1000
50
10
SINGLE PULSE
θ
JA
= 125
o
C/W
T
A
= 25
o
C
V
GS
= 10 V
R
100
μ
s
100
10
1
0.1
1 ms
THIS AREA IS
10 ms
100 ms
LIMITED BY r
DS(on)
1 s
SINGLE PULSE
T
J
= MAX RATED
10 s
DC
0.01
0.001
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
1
0.5
10
-4
10
-3
10
-2
t, PULSE WIDTH (sec)
10
-1
1
10
100 1000
0.1
1
10
100
500
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
R
θ
JA
= 125
o
C/W
1
2
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
0.001
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
5
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