onsemi-FDMC510P
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DATA SHEET
MOSFET
– P-Channel,
POWERTRENCH
)
V
r
MAX
I MAX
D
DS
DS(on)
−20 V
8 m
W
@ −4.5 V
9.8 m
W
@ −2.5 V
13 m
W
@ −1.8 V
17 m
W
@ −1.5 V
−18 A
-20
V
,
–
18 A, 8.0 m
W
FDMC510P
General Description
This P−Channel MOSFET is produce using
onsemi
’s advanced
®
Pin 1
POWERTRENCH process
that has been optimized for r
switching performance and ruggedness.
,
DS(ON)
G
S
S
S
Features
D
D
D
D
•
Max r
•
Max r
•
Max r
•
Max r
= 8.0 m
W
at V
= −4.5
V
, I
=
−
12 A
GS D
DS(on)
DS(on)
DS(on)
DS(on)
Top
Bottom
= 9.8 m
W
at V
= −2.5
V
, I
=
−
10 A
GS
D
WDFN8 3.3×3.3, 0.65P
(MLP 3.3×3.3)
= 13 m
W
at V
= −1.8
V
, I
=
−
9.3 A
GS
D
= 17 m
W
at V
= −1.5
V
, I
=
−
8.3 A
GS
D
CASE 511DH
•
High Performance Trench Technology for Extremely Low r
DS(on)
•
High Power and Current Handling Capability in a Widely Used
MARKING DIAGRAM
Surface Mount Package
•
100% UIL Tested
FDMC
510P
ALYW
•
This Device is Pb−Free, Halide Free and is RoHS Compliant
Applications
•
Battery Management
•
Load Switch
FDMC510
P
=
D
evice Code
A
= Assembly Site
L
YW
= Wafer Lot Number
= Assembly Start Week
PIN ASSIGNMENT
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
P−Channel MOSFET
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
August, 2022 − Rev. 4
FDMC510P/D
FDMC510P
MOSFET MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
−20
8
V
I
D
Continuous
T
C
= 25
°
C
−18
A
Pulsed
T =
25
°
C
A
−12
−50
E
Single Pulse Avalanche Energy
Power Dissipation
37
41
mJ
W
AS
P
T =
25
°
C
C
D
T =
25
°
C
A
2.3
T , T
Operating and Storage Junction
T
e
mperature Range
−55 to + 150
°
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
Thermal Resistance, Junction to Case
3
°
C/W
R
q
q
JC
R
53
JA
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
JA
2
a. 53
°
C/W when mounted on a 1 in
pad
b. 125
°
C/W when mounted on a minimum
pad of 2 oz copper
of 2 oz copper
2
FDMC510P
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= −250
m
A, V
= 0 V
−20
−
−
−
−
V
DSS
D
GS
Breakdown Voltage
T
e
mperature
Coefficient
= −250
m
A, referenced to 25
°
C
−12
mV/
°
C
D
BV
DSS
D
T
J
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= −16 V, V
= 0 V
−
−
−
−
−1
m
A
DSS
GSS
DS
GS
I
=
8
V
, V
= 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V
,
I =
−250
m
A
−0.4
−
−0.5
3
−1.0
−
V
GS(th)
GS
DS D
Gate to Source Threshold Voltage
T
e
mperature Coefficient
= −250
μ
A, referenced to 25
°
C
mV/
°
C
D
V
GS(th)
D
T
J
D
r
Static Drain to Source
On Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
V
DS
= −4.5 V, I
= −12 A
−
−
−
−
−
−
6.4
7.6
9.2
11
8.0
9.8
13
17
12
−
m
W
DS(on)
D
= −2.5 V, I
= −10 A
D
= −1.8 V, I
= −9.3 A
D
= −1.5 V, I
= −8.3 A
D
= −4.5 V, I
= −12 A, T
= 125
°
C
8.5
75
D
J
g
FS
Forward Transconductance
= −5 V, I
= −12 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= −10 V, V
= 0 V, f = 1 MHz
−
−
−
5910
840
7860
1120
1110
pF
pF
pF
iss
GS
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
738
SWITCHING CHARACTERISTICS
t
Turn−On Delay Time
Rise Time
V
R
= −10 V, I
= −12 A, V
= −4.5 V,
−
−
−
−
−
−
−
−
15
34
27
55
540
272
116
70
−
ns
ns
d(on)
DD
D
GS
= 6
W
GEN
t
r
t
Turn−Off Delay Time
Fall Time
338
170
83
ns
d(off)
t
f
ns
Q
g(TOT)
Q
g(TOT)
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
V
GS
V
DD
= 0 V to −4.5 V, V
= −10 V, I
= −12 A
nC
nC
nC
nC
DD
D
= 0 V to −2.5 V, V
= −10 V, I
= −12 A
50
DD
D
Q
Q
= −10 V, I
= −12 A
6.3
20.4
gs
gd
D
−
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
−
−
−
−
−0.70
−0.53
35
−1.3
−1.2
57
V
SD
GS
S
GS
S
t
Reverse Recovery Time
I =
−12 A, di/dt = 100 A/
m
s
F
ns
rr
Q
Reverse Recovery Charge
20
32
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse
T
e
st: Pulse Width < 300
m
s, Duty cycle < 2.0%.
3. Starting
T =
25
°
C; P−Ch: L = 3 mH, I
= −5 A, VDD = −20
V
, V
=
−
4.5
V
.
J
AS
GS
4. No
gate overvoltage rating is implied.
3
FDMC510P
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
50
40
30
20
10
0
5
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
= −1.5 V
GS
4
3
2
1
0
V
= −4.5 V
V
= −1.2 V
GS
GS
V
GS
= −2.5 V
V
= −1.8 V
GS
V
GS
= −1.5 V
V
= −1.8 V
= −4.5 V
GS
V
GS
= −1.2 V
V
GS
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
GS
= −2.5 V
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
−V ,
DRAIN TO SOURCE VOLTAGE (V)
DS
−I ,
DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
25
I
V
= −12 A
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
D
= −4.5 V
GS
20
I
D
= −12 A
15
10
5
T =
125
°
C
J
T =
25
°
C
J
0
1.0
−75 −50 −25
0
25 50 75
100 125 150
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T , JUNCTION TEMPERATURE (
°
C)
J
−V ,
GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
50
100
V
GS
= 0 V
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
40
V
DD
= −5 V
10
1
T =
150
°
C
J
30
20
10
0
T =
150
°
C
J
T =
25
°
C
J
T =
25
°
C
J
0.1
0.01
T =
−55
°
C
J
T =
−55
°
C
J
0.0
0.5
1.0
1.5
2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−V ,
GATE TO SOURCE VOLTAGE (V)
GS
−V ,
BODY DIODE FORWARD VO
L
TAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
4
FDMC510P
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (continued)
J
4.5
3.0
1.5
0.0
20000
10000
I
D
= −12 A
C
iss
V
DD
= −8 V
V
= −12 V
DD
V
DD
= −10 V
C
oss
1000
400
f = 1 MHz
= 0 V
V
C
GS
rss
0
20
40
60
80
100
0.1
1
10
20
Q ,
GATE CHARGE (nC)
g
−V ,
DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
60
50
20
10
V
GS
= −4.5 V
40
30
20
10
0
T =
25
°
C
J
V
= −2.5 V
GS
T =
100
°
C
J
T =
125
°
C
J
LIMITED BY PACKAGE
50 75
R
= 3
°
C/W
q
JC
1
0.1
1
10
100
1000
25
100
125
150
t ,
TIME IN AVALANCHE (ms)
AV
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100
1000
SINGLE PULSE
= 125
°
C/W
T =
25
°
C
A
100
m
s
1 ms
R
q
JA
10
1
100
10
10 ms
THIS AREA IS
LIMITED BY r
100 ms
DS(on)
1 s
SINGLE PULSE
T =
MAX RATED
10 s
DC
0.1
J
R
= 125
°
C/W
q
JA
1
T =
25
°
C
A
0.01
0.5
10
−4
10
−3
10
−2
10
−1
1
10
100 1000
0.01
0.1
1
10
80
−V ,
DRAIN TO SOURCE VOLTAGE (V)
DS
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
5
FDMC510P
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (continued)
J
2
1
DUTY−CYCLEDESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.05
0.02
0.01
0.1
0.01
t
1
t
2
NOTES:
DUTY FACTOR, D = t
/ t
1
2
SINGLE PULSE
= 125
°
C/W
PEAK T
= P
x Z
x R
+ T
JA A
q
q
J
DM
JA
R
q
JA
0.001
1
0
−4
1
0
−3
10
−2
t, RECTANGULAR PULSE DURATION (s)
1
0
−1
1
10
1000
100
Figure 13. Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
†
Device
Device Marking
Package
Reel Size
Tape Width
Shipping
FDMC510P
FDMC510P
WDFN8 3.3×3.3, 0.65P (MLP 3.3×3.3)
(Pb−Free and Halide Free)
13”
12 mm
3000 /
T
a
pe & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates and/or subsidiaries in the United
States and/or other countries.
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3×3.3, 0.65P
CASE 511DH
ISSUE O
DATE 31 JUL 2016
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
3.30
(1.70)
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
0.65
0.42(8X)
2X
1.95
RECOMMENDED LAND PATTERN
0.75 0.05
0.10 C
0.15 0.05
0.08 C
0.025 0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO
−
229
B. DIMENSIONS
ARE IN MILLIMETERS.
3.30 0.05
2.27 0.05
C. DIMENSIONS
AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
(0.35)
PIN #1 IDENT
0.50 0.05
(4X)
(0.79)
D. LAND
PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
(1.15)
3.30 0.05
2.00 0.05
R0.15
0.30 0.05
(3X)
8
5
0.35 0.05
(8X)
0.65
0.10
0.05
C A B
C
1.95
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
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onsemi
assume any liability arising out of the application or use
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and applications using
onsemi
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provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
does not convey any license
under any of its intellectual property rights nor the rights of others.
onsemi
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onsemi
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onsemi
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onsemi
was negligent regarding the design or manufacture of the part.
onsemi
is an Equal
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:
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