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October 2006
FDMC6890NZ
tm
Dual N-Channel PowerTrench
®
MOSFET
20V, 4A, Q1:68m
Ω,
Q2:100m
Ω
Features
General Description
Q1: N-Channel
FDMC6890NZ is a compact single package solution for DC to
DC converters
with excellent
thermal and switching
Max r
DS(on)
= 68m
Ω
at V
GS
= 4.5V, I
D
= 4A
Max r
DS(on)
= 100m
Ω
at V
GS
= 2.5V, I
D
= 3A
Q2: N-Channel
characteristics. Inside
the Power
33 package features two
N-channel MOSFE
T
s
w
ith low on-state resistance and low gate
charge to
maximize the power conversion and switching
efficiency. The Q1 switch also integrates gate protection from
unclamped voltage input.
Max r
DS(on)
= 100m
Ω
at V
GS
= 4.5V, I
D
= 4A
Max r
DS(on)
= 150m
Ω
at V
GS
= 2.5V, I
D
= 2A
Low gate Charge
Application
DC – DC Conversion
RoHS Compliant
Bottom
G1
Up
G2
D2
S1
D2
G2
D1/S2
D1/S2
4
5
3
2
1
D1/S2
S1
D2
D1
D1/S2
G1
6
G1 D1/S2 G2
Power 33
D1/S2
S1
D2
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Q1
20
Q2
20
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±12
±12
-Continuous
-Pulsed
4
I
D
A
10
Power Dissipation
(Steady State)
Q1
(Note 1a)
(Note 1a)
1.92
1.78
P
D
W
Power Dissipation
(Steady State)
Q2
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Q1
Q2
65
70
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
7inch
Tape Width
8mm
Quantity
6890N
FDMC6890NZ
Power 33
3000 units
1
©2006 Fairchild Semiconductor Corporation
FDMC6890NZ Rev.C
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Off Characteristics
I
D
= 250
µ
A, V
GS
= 0V
Q1
Q2
20
20
BV
DSS
Drain to Source Breakdown Voltage
V
∆
BV
DSS
∆
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
µ
A, referenced to 25°C
V
DS
= 16V,
V
GS
= 0V
Q1
Q2
13
12
mV/°
C
µ
A
Q1
Q2
1
1
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Q1
Q2
±10
±100
µ
A
nA
V
GS
= ±12V, V
DS
= 0V
On Characteristics
Q1
Q2
0.6
0.6
0.9
1.0
2
2
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
µ
A
V
∆
V
GS(th)
∆
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
Q1
Q2
-3
-3
I
D
= 250
µ
A, referenced to 25°C
mV/°C
V
GS
= 4.5V,
I
D
= 4A
V
GS
= 2.5V,
I
D
= 3A
58
77
68
100
Q1
Q2
r
DS(on)
Drain to Source On Resistance
m
Ω
V
GS
= 4.5V,
I
D
= 4A
V
GS
= 2.5V,
I
D
= 2A
67
102
100
150
Q1
Q2
10
7
g
FS
Forward Transconductance
V
DS
=
V
,
I
D
=4A
S
Dynamic Characteristics
Q1
Q2
205
190
270
250
C
iss
C
oss
C
rss
R
g
Input Capacitance
pF
pF
pF
Ω
Q1
Q2
60
60
80
80
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 10
V
,
V
GS
= 0V, f= 1MHZ
Q1
Q2
40
35
60
55
Q1
Q2
3.3
2.8
f = 1MHz
Switching Characteristics
Q1
Q2
4
4
10
10
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
ns
ns
Q1
Q2
13
12
22
21
V
DD
= 10V, I
D
= 4A,
R
GEN
= 6
Ω
Q1
Q2
10
7
19
14
Turn-Off Delay Time
Fall Time
ns
Q1
Q2
6
6
12
12
ns
Q1
Q2
2.4
1.8
3.4
2.6
Q
g(TOT)
Q
g(2)
Q
gs
Q
gd
T
o
tal Gate Charge at 4.5V
T
o
tal Gate Charge at 2V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0V to 4.5V
nC
nC
nC
nC
Q1
Q2
1.4
0.6
1.9
0.8
V
DD
= 10 V
I
D
= 4A
Q1
Q2
0.4
0.5
Q1
Q2
0.9
0.8
2
FDMC6890NZ Rev.C
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Drain-Source Diode Characteristics
Q1
Q2
0.94
0.92
1.25
1.25
V
SD
t
rr
Source to Drain Diode
Forward Voltage
V
GS
= 0V, I
S
= 4A
V
Q1
Q2
18
17
27
26
Reverse Recovery Time
ns
nC
I
F
= 4A, di/dt = 100A/s
Q1
Q2
9
10
14
15
Q
rr
Reverse Recovery Charge
Notes:
2
1:
R
is determined with the device mounted on a 1in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while
R
is determined by
θ
JA
θ
JC
θ
CA
the user’s board design.
b. 150°C/W when mounted on
minimum pad of 2 oz copper
a
a. 65°C/W when mounted
on
a 1 in
pad of
2 oz
copper
2
2:
Pulse
T
e
st: Pulse Width < 30
0
µ
s, Duty cycle < 2.0%.
3
FDMC6890NZ Rev.C
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted
12
10
8
3.0
2.5
2.0
1.5
1.0
0.5
V
= 4.5V
= 2.5V
= 1.8V
GS
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 1.8V
V
GS
6
V
GS
= 2.5V
V
GS
= 4.5V
4
V
GS
2
0
0.0
0.5
V
1.0
1.5
2.0
2.5
3.0
0
2
4
6
8
10
12
4.5
1.4
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT(A)
DS
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.4
200
I
D
= 4A
GS
= 4.5V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
I
D
= 4A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
160
120
80
T =
150
o
C
J
T
= 25
o
C
J
40
1.5
-50 -25
0
25
50
75
100 125 150
2.0
2.5
3.0
3.5
4.0
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Fi gu re 3.
Nor mal ize d
O n – Resi sta nce
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
9
20
10
V
GS
= 0V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
8
7
6
5
1
T =
150
o
C
J
T =
150
o
C
0.1
J
4
T
J
= 25
o
C
3
T
J
= 25
o
C
0.01
2
1
T
J
= -55
o
C
T
J
= -55
o
C
1E-3
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.5
1.0
1.5
2.0
2.5
V ,
BODY DIODE FORWARD VOLTAGE (V)
SD
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
4
FDMC6890NZ Rev.C
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted
4.5
400
4.0
V
DD
= 8V
C
iss
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10V
DD
100
C
oss
V
= 12V
DD
C
rss
f = 1MHz
= 0V
V
GS
20
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
20
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE(nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
6
5
20
10
4
100us
3
T
J
= 25
o
C
1ms
1
0.1
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
2
100ms
1s
T
J
= 125
o
C
10s
DC
SINGLE PULSE
T
= MAX RATED
= 25
O
C
J
T
A
1
0.01
0.01
0.1
1
10
60
0.1
1
10
t
AV
, TIME IN AVALANCHE(ms)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figur
e
1
0. Forward Bias Safe
Operating Area
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
100
10
FOR TEMPERATURES
o
V
GS
= 10V
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
150
–
T
A
I = I
———————–
25
125
o
T
= 25
C
A
SINGLE PULSE
1
0.5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, PULSE WIDTH (s)
Figure 11.
Single Pulse
Maximum Power
Dissipation
5
FDMC6890NZ Rev.C
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
P
DM
0.1
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t
/t
1
2
SINGLE PULSE
10
-3
PEAK T
= P
J
x Z
x R
+ T
0.01
DM
θ
JA
θ
JA
A
0.006
10
-4
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 12.
Transient Thermal Response Curve
6
FDMC6890NZ Rev.C
Typical Characteristics (Q2 N-Channel)
10
3.0
2.5
2.0
1.5
1.0
0.5
V
= 4.5V
PULSE DURATION = 80
µ
s
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
GS
DUTY CYCLE = 0.5%MAX
V
GS
= 1.8V
8
6
4
2
V
= 2.5V
GS
V
GS
= 2.5V
V
GS
= 4.5V
V
= 1.8V
GS
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10
12
V
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT(A)
DS
Figure 13.
On Region Characteristics
Figure 14. Normalized on-Resistance v
S
Drain
Current and
Gate Voltage
200
1.5
I
D
= 4A
1.4
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
I
D
= 4A
V
GS
= 4.5V
160
120
80
1.3
1.2
1.1
1.0
0.9
0.8
0.7
T =
150
o
C
J
T
= 25
o
C
J
40
2
3
4
5
6
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE
(
o
C
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 16. On-Resistance vs Gate to
Source Voltage
Figure 15. Normalized On Resistance
vs Junction Temperature
6
20
10
V
GS
= 0V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
5
4
3
2
1
1
T =
150
o
C
J
0.1
T
J
= 25
o
C
T =
150
o
C
J
T
J
= 25
o
C
0.01
T
J
= -55
o
C
T
J
= -55
o
C
2.5
1E-3
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.5
1.0
1.5
2.0
3.0
V ,
BODY DIODE FORWARD VOLTAGE (V)
SD
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 17. Transfer Characteristics
Figure 18. Source to Drain Diode
Forward Voltage vs Source Current
7
FDMC6890NZ Rev.C
Typical Characteristics
4.5
4.0
3.5
400
100
V
= 8V
DD
C
iss
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10V
DD
C
oss
V
= 12V
DD
C
rss
f = 1MHz
= 0V
V
GS
20
0.1
20
1
10
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE(nC)
g
Figure 20. Capacitance vs Drain
to Source Voltage
Figure 19. Gate Charge Characteristics
6
20
10
5
4
100us
1ms
3
2
1
0.1
T
J
= 25
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
10ms
100ms
1s
10s
DC
T
J
= 125
o
C
0.01
SINGLE PULSE
T
T
= MAX RATED
= 25
O
C
J
A
1
1E-3
0.01
0.1
1
60
0.1
1
10
t
AV
, TIME IN AVALANCHE(ms)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 21. Unclamped Inductive
Switching Capability
Figure 22. Forward Bias Safe
Operating Area
200
100
10
1
V
GS
= 10V
FOR TEMPERATURES
o
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
150
–
T
A
I = I
———————–
25
125
o
T
= 25
C
A
SINGLE PULSE
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, PULSE WIDTH (s)
Figure 23. Single Pulse Maximum Power Dissipation
8
FDMC6890NZ Rev.C
Typical Characteristics
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
t
2
0.01
1E-3
NOTES:
DUTY FACTOR: D = t
/t
1
2
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 24. Transient Thermal Response Curve
9
FDMC6890NZ Rev.C
(0.23)
(1.09)
0.05 C
3.0
A
(1.35)
(1.65)
6
4
B
(2.80)
3.0
(0.64)
(0.82)
0.05 C
1
(0.70)
3
PIN #1 IDENT
(0.65)
0.95 TYP
TOP VIEW
0.80
MAX
RECOMMENDED LAND PATTERN
0.10 C
0.08 C
(0.20)
C
NOTES: UNLESS OTHERWISE SPECIFIED
A) CONFORMS TO JEDEC REGISTRATION,
MO-229, VARIATION WEEA
B) ALL
DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS
DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING
AND TOLERANCING PER
ASME Y14.5M-2009.
E) DRAWING
FILE NAME: MKT-MLP06HREV2
0.05
0.00
SIDE VIEW
SEATING
PLANE
2.5 MAX.
0.41±0.05
1.17±0.05
0.82±0.05
0.79±0.05
0.61±0.05
0.45
0.20
3
1
PIN #1 IDENT
1.7 MAX.
0.10
0.05
C A B
C
0.2 MIN
4
6
0.45
0.30
0.95
1.90
BOTTOM VIEW
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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