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FDMC7660
General Description
N-Channel PowerTrench
®
MOSFET
This
N-Channel
MOSFET
is produced using
ON
Semiconductor’s advanced PowerTrench
®
process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
30 V, 20 A, 2.2 m
Ω
Features
Max r
DS(on)
= 2.2 m
Ω
at V
GS
= 10 V, I
D
= 20 A
Max r
DS(on)
= 3.3 m
Ω
at V
GS
= 4.5 V, I
D
= 18 A
High performance technology for extremely low r
DS(on)
T
e
rmination is Lead-free and RoHS Compliant
Applications
DC – DC Buck Converters
Point of Load
High Efficiency Load Switch and Low Side Switching
Bottom
S
Top
Pin 1
S
D
S
S
S
S
G
G
D
D
D
D
D
D
D
Power 33
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
±20
V
V
(Note 4)
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
40
100
I
D
A
(Note 1a)
(Note 3)
20
-Pulsed
200
E
AS
Single Pulse Avalanche Energy
Power Dissipation
200
mJ
W
T
C
= 25°C
T
A
= 25°C
41
P
D
Power Dissipation
(Note 1a)
2.3
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to + 150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3
°C/W
(Note 1a)
53
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12 mm
Quantity
FDMC7660
FDMC7660
Power 33
3000 units
©2012
Semiconductor Components Industries, LLC.
October-2017,
Rev.
3
Publication Order Number:
FDMC7660/D
1
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
30
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25°C
14
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
1
μ
A
100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
1.2
1.7
-6
2.5
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25°C
mV/°C
V
GS
= 10 V, I
D
= 20 A
1.8
2.6
2.2
163
2.2
3.3
3.1
r
DS(on)
g
FS
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= 4.5 V, I
D
= 18 A
m
Ω
V
GS
= 10 V, I
D
= 20 A, T
J
= 125°C
V
DS
= 5 V, I
D
= 20 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
3630
1345
110
4830
1790
165
pF
pF
pF
Ω
V
DS
= 15 V, V
GS
= 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz
0.9
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
14
6.8
36
25
14
58
11
86
38
ns
ns
V
DD
= 15 V, I
D
= 20 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
ns
5.7
54
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
nC
nC
nC
nC
Q
g
V
GS
= 0 V to 4.5 V
24
V
DD
= 15
V
,
I
D
= 20 A
Q
gs
Q
gd
11
5.6
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 20 A
(Note 2)
(Note 2)
0.8
0.7
45
1.2
1.2
63
V
SD
Source-Drain Diode
Forward Voltage
V
V
GS
= 0 V, I
S
= 1.9 A
t
rr
Reverse Recovery Time
ns
I
F
= 20 A, di/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
25
35
nC
Notes
:
1. R
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θ
JA
θ
JC
is guaranteed by design while
R
is determined by the user’s board design.
θ
JA
b.
125 °C/W when mounted on
a minimum pad of 2 oz copper
a.
53 °C/W when mounted on a
1 in
pad of
2 oz
copper
2
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3. Starting T
= 25 °C, L = 1 mH, I
= 20 A, V
= 27 V, V
= 10 V
GS
J
AS
DD
4. As an N-channel device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
2
Typical Characteristics
T
J
= 25°C unless otherwise noted
200
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10 V
150
V
GS
= 3 V
V
GS
= 4.5
V
V
GS
= 3.5 V
V
GS
= 4
V
100
V
GS
= 4 V
V
GS
= 3.5 V
50
V
GS
= 10 V
150
V
GS
= 4.5 V
100
V
GS
= 3 V
0
0.0
0.5
1.0
1.5
2.0
0
50
200
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figure 1.
On Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
15
I
D
= 20 A
I
D
= 20 A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10 V
1.4
1.2
1.0
0.8
10
5
T
J
= 125
o
C
T
J
= 25
o
C
0
-75 -50 -25
0
25 50 75
100 125 150
2
4
6
8
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
200
200
100
V
GS
= 0 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
150
100
50
T
J
= 150
o
C
V
DS
= 5 V
T
J
= 150
o
C
10
1
T
J
= 25
o
C
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= -55
o
C
0.1
0.2
0
0.4
0.6
0.8
1.0
1.2
1
2
3
4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
10
10
1
I
D
= 20 A
C
iss
8
V
DD
= 10 V
6
C
oss
V
DD
= 15 V
4
C
rss
V
DD
=
20 V
f = 1 MHz
= 0 V
2
V
GS
0.1
0
0.05
30
150
10
3
0.1
1
10
0
20
40
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
150
100
50
30
R
θ
JC
= 3
o
C/W
V
GS
= 10 V
T
J
= 25
o
C
T
J
= 100
o
10
C
V
GS
= 4.5 V
T
J
= 125
o
C
Limited by Package
0
25
1
0.01
0.1
1
10
100 300
50
75
100
125
T
C
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Case Temperature
300
100
1000
DERIVED FROM
TESTED DATA
SINGLE PULSE
θ
JA
= 125
o
C/W
T
A
= 25
o
C
R
100
10
10
1
1 ms
THIS AREA IS
LIMITED BY r
DS(on)
10 ms
100 ms
1 s
SINGLE PULSE
T
J
= MAX RATED
0.1
10 s
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
DC
1
0.01
0.5
10
-3
10
-2
10
-1
t, PULSE WIDTH (sec)
10
0
10
1
10
2
0.01
0.1
1
10
100
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T
= P
x Z
x R
+ T
θ
JA
A
J
DM
θ
JA
R
θ
JA
= 125
o
C/W
1E-3
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
10
0
10
1
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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