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June 2014
FDMC7672
N-Channel Power Trench
®
MOSFET
30 V, 16.9 A, 5.7 m
Ω
Features
General Description
Max r
DS(on)
= 5.7 m
Ω
at V
GS
= 10 V, I
D
= 16.9 A
Max r
DS(on)
= 7.0 m
Ω
at V
GS
= 4.5 V, I
D
= 15.0 A
High performance technology for extremely low r
DS(on)
T
e
rmination is Lead-free and RoHS Compliant
This N-Channel MOSFET is
produced using Fairchild
Semiconductor’s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
DC – DC Buck Converters
Notebook battery power management
Load switch in Notebook
Top
Bottom
Pin 1
S
S
D
D
S
S
S
G
S
D
D
D
D
D
D
G
MLP 3.3×3.3
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
30
±20
V
V
T
C
= 25 °C
T
A
= 25 °C
20
I
D
(Note 1a)
(Note 3)
16.9
50
A
-Pulsed
E
AS
Single Pulse Avalanche Energy
Power Dissipation
144
mJ
W
T
C
= 25 °C
T
A
= 25 °C
33
P
D
Power Dissipation
(Note 1a)
2.3
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3.7
53
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMC7672
FDMC7672
MLP 3.3×3.3
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
1
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
30
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25 °C
DS
= 24 V, V
GS
= 0 V
T
J
= 125 °C
13
mV/°C
V
1
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
μ
A
250
100
V
GS
= 20 V, V
DS
= 0 V
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
1.2
1.9
-6
3.0
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25 °C
mV/°C
V
GS
= 10 V,
I
D
= 16.9 A
4.3
5.4
5.7
7.0
V
GS
= 4.5 V,
I
D
= 15.0 A
r
DS(on)
Static Drain to Source On Resistance
Forward Transconductance
m
Ω
V
GS
= 10 V,
I
D
= 16.9 A
T
J
= 125 °C
5.5
82
6.9
g
FS
V
DD
= 5 V,
I
D
= 16.9 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
2925
1050
80
3890
1400
120
pF
pF
pF
Ω
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.9
2.7
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
13
6
24
12
49
10
57
24
ns
ns
V
DD
= 15
V
,
I
D
= 16.9 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
31
5
ns
ns
T
o
tal Gate Charge
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
GS
= 0 V to 4.5 V
40
18
9
nC
nC
nC
nC
Q
g(TOT)
V
V
DD
= 15 V
D
= 16.9 A
I
Q
gs
Q
gd
4
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 16.9 A
(Note 2)
(Note 2)
0.83
0.72
39
1.2
1.2
62
V
SD
Source to Drain Diode
Forward Voltage
V
V
GS
= 0 V, I
S
= 1.9 A
t
rr
Reverse Recovery Time
ns
I
F
= 16.9 A, di/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
18
32
nC
NOTES:
2
1:
R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
a. 53 °C/W when mounted on
a 1 in
pad of
2 oz
copper
b.125 °C/W when mounted on
a minimum pad of
2 oz
copper
2
2:
Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0 %.
o
3. E
of 144 mJ is based on starting T
= 25
C, L = 1 mH, I
= 17 A, V
= 27 V, V
= 10 V.
AS
J AS
DD GS
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted
50
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
GS
= 10 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3.5 V
V
GS
= 6 V
40
V
GS
= 4.5 V
V
GS
= 4 V
30
V
GS
= 4 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
20
V
GS
= 3.5 V
V
GS
= 4.5 V
V
GS
= 3 V
10
V
GS
= 10 V
40 50
V
GS
= 6 V
20 30
I
D
,
DRAIN CURRENT (A)
0
0.0
0.5
1.0
1.5
0
10
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On-Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs. Drain Current and Gate Voltage
1.6
20
I
D
= 16.9 A
V
GS
= 10 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 16.9 A
1.4
1.2
1.0
0.8
0.6
15
10
5
T
J
= 125
o
C
T
J
= 25
o
C
0
-75 -50 -25
0
25 50 75
100 125 150
2
4
6
8
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs. Junction Temperature
Figur
e
4
. On-Resistance
vs. Gate to
Source Voltage
100
50
V
GS
= 0 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
40
30
20
10
0
10
1
V
DS
= 5 V
T
J
= 150
o
C
T
J
= 25
o
C
0.1
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0.01
T
J
= -55
o
C
0.001
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs. Source Current
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
10
5000
1000
I
D
= 16.9 A
8
C
iss
V
DD
= 10 V
V
DD
= 15 V
6
C
oss
V
DD
= 20 V
4
2
0
100
50
f = 1 MHz
= 0 V
V
GS
C
rss
0
9
18
27
36
45
0.1
1
10
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s .
D r a i n
to Source Voltage
70
60
50
40
30
20
10
20
10
T
J
= 25
o
C
V
GS
= 10 V
T
J
= 100
o
C
T
J
= 125
o
C
V
GS
= 4.5 V
R
θ
JC
= 4.0
o
C/W
100
T
c
,
CASE TEMPERATURE
(
o
C
)
Limited by Package
50
1
0.01
0
25
200
0.1
1
10
100
75
125
150
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs. Case Temperature
70
10
2000
100
μ
s
1000
100
10
V
GS
= 10 V
1 ms
10 ms
1
0.1
THIS AREA IS
100 ms
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
1 s
10 s
DC
SINGLE PULSE
θ
JA
= 125
o
C/W
T
A
= 25
o
C
R
T
A
= 25
o
C
1
0.01
0.5
10
-4
10
-3
10
-2
t, PULSE WIDTH (sec)
10
-1
1
10
0.01
0.1
1
10
100
200
100 1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse Maximum
Power Dissipation
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
/t
R
θ
JA
= 125
o
C/W
1
2
0.001
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
0.0005
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13.
Transient Thermal Response Curve
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
5
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, spe-
cifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
6
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
™
CTL™
F-PFS™
FRFET
®*
®
®
®
tm
®
Global Power Resource
SM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
TinyCalc™
®
Green FPS™ e-Series™
G
max
™
GTO™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
TranSiC™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
TriFault Detect™
TRUECURRENT *
EfficentMax™
ESBC™
®
μ
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
UHC
Fairchild Semiconductor
FACT Quiet Series™
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
仙童
™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I68
©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C5
7
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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