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November 2013
FDMC7678
N-Channel Power Trench
®
MOSFET
30 V, 19.5 A, 5.3 m
Ω
Features
General Description
Max r
DS(on)
= 5.3 m
Ω
at V
GS
= 10 V, I
D
= 17.5 A
Max r
DS(on)
= 6.8 m
Ω
at V
GS
= 4.5 V, I
D
= 15.0 A
High performance technology for extremely low r
DS(on)
T
e
rmination is Lead-free and RoHS Compliant
This N-Channel MOSFET is
produced using Fairchild
Semiconductor’s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
DC – DC Buck Converters
Notebook battery power management
Load switch in Notebook
Bottom
D D
Top
7
D
D
8
2
6
5
4
3
2
1
G
S
S
S
D
D
D
D
5
6
7
8
G S
S
Pin 1
S
1
3
4
MLP 3.3×3.3
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
30
±20
V
V
(Note 3)
Drain Current
-Continuous (Package limited)
T
C
= 25 °C
19.5
63
Drain Current
-Continuous (Silicon limited)
-Continuous
T
C
= 25 °C
I
D
A
T
A
= 25 °C
(Note 1a)
(Note 4)
17.5
70
-Pulsed
E
AS
Single Pulse Avalanche Energy
Power Dissipation
54
mJ
W
T
C
= 25 °C
T
A
= 25 °C
31
P
D
Power Dissipation
(Note 1a)
2.3
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
4.0
53
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMC7678
FDMC7678
MLP 3.3×3.3
3000 units
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev.
C2
1
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0 V
30
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25 °C
21
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
1
μ
A
Gate to Source Leakage Current, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
D
= 250
μ
A, referenced to 25 °C
V
GS
= 10 V,
I
D
= 17.5 A
GS
= 4.5 V,
I
D
= 15.0 A
1.2
1.5
-5
3.0
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
mV/°C
4.2
5.1
5.3
6.8
V
r
DS(on)
Static Drain to Source On Resistance
Forward Transconductance
m
Ω
V
GS
= 10 V,
I
D
= 17.5 A
T
J
= 125 °C
5.7
90
7.2
g
FS
V
DD
= 5
V
,
I
D
= 17.5 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1810
620
75
2410
820
110
2.5
pF
pF
pF
Ω
V
DS
= 15 V, V
GS
= 0 V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.7
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
10
4
19
10
41
10
39
19
ns
ns
V
DD
= 15 V, I
D
= 17.5 A
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
26
3
ns
ns
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
V
GS
= 0 V to 4.5 V
28
14
4.4
3.9
nC
nC
nC
nC
Q
g(TOT)
V
DD
= 15 V
D
= 17.5 A
I
Q
gs
Q
gd
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 1.9 A
(Note 2)
(Note 2)
0.7
0.8
30
1.2
1.2
49
V
SD
Source to Drain Diode Forward Voltage
V
V
GS
= 0 V, I
S
= 17.5 A
t
rr
Reverse Recovery Time
ns
I
F
= 17.5 A, di/dt = 100 A/
μ
s
Q
rr
Reverse Recovery Charge
13
23
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
b.125 °C/W when mounted on
a minimum pad of
2 oz
copper
a. 53 °C/W when mounted on
a 1 in
pad of 2 oz copper
2
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0 %.
3. As an N-ch device, the negative V
rating is for low
duty cycle pulse occurence only. No continuous rating is implied.
o
GS
4. E
of 54 mJ is based on starting T
= 25
C, L = 0.3 mH, I
= 19 A, V
= 27 V, V
= 10 V.
AS
J
AS
DD
GS
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev.
C2
2
Typical Characteristics
T
J
= 25°C unless otherwise noted
70
4
3
2
1
0
V
GS
= 10 V
V
GS
= 6 V
60
V
GS
= 4.5 V
50
V
GS
= 3 V
V
GS
= 3.5 V
V
GS
= 3 V
40
30
V
GS
= 3.5 V
V
GS
= 4.5 V
20
V
GS
= 6 V
V
GS
= 10 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
10
0
0
10
20
30
40
50
60
70
0.0
0.5
1.0
1.5
2.0
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
Figure 1.
On Region Characteristics
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
12
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 17.5 A
V
GS
= 10 V
10
8
I
D
= 17.5 A
T
J
= 125
o
C
6
4
T
J
= 25
o
C
2
-75 -50 -25
0
25 50 75
100 125 150
2
4
6
8
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
70
100
V
GS
= 0 V
PULSE DURATION = 80
μ
s
60
50
40
30
20
10
0
DUTY CYCLE = 0.5% MAX
T
J
= 150
o
C
10
1
V
DS
= 5 V
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0.1
0.01
T
J
= -55
o
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.0
1.5
2.0
2.5
3.0
3.5
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev.
C2
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
10
3000
1000
I
D
= 17.5 A
V
DD
= 10 V
C
iss
8
V
DD
= 15 V
6
C
oss
V
DD
= 20 V
4
100
30
2
0
f = 1 MHz
= 0 V
C
rss
V
GS
0
5
10
15
20
25
30
0.1
1
10
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
70
60
50
40
30
20
10
0
30
R
θ
JC
= 4.0
o
C/W
T
J
= 25
o
C
V
GS
= 10 V
10
V
GS
= 4.5 V
T
J
= 100
o
C
T
J
= 125
o
C
Limited by Package
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
T
C
, C
ASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Case Temperature
100
10
2000
1000
100
10
100
μ
s
1 ms
10 ms
100 ms
1 s
THIS AREA IS
1
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
0.1
0.01
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
10 s
DC
T
A
= 25
o
C
1
0.5
10
-4
10
-3
10
-2
t, PULSE WIDTH (sec)
10
-1
1
10
0.01
0.1
1
10
100200
100 1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev.
C2
4
Typical Characteristics
T
J
= 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
0.01
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
/t
θ
JA
= 125
o
C/W
1
2
R
PEAK T
= P
J
x Z
x R
+ T
DM
θ
JA
θ
JA
A
0.001
0.0005
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev.
C2
5
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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www.onsemi.com/site/pdf/Patent
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. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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