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ypical” parameters which may be provided in
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products are not designed, intended, or authorized
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d
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FDMC7692S
N-Channel PowerTrench
®
SyncFET
TM
30 V, 18 A, 9.3 m
Ω
General Description
Features
This FDMC7692S is produced using
ON
Semiconductor’s
Max r
DS(on)
= 9.3 m
Ω
at V
GS
= 10 V, I
D
= 12.5 A
Max r
DS(on)
= 13.6 m
Ω
at V
GS
= 4.5 V, I
D
= 10.4 A
High performance technology for extremely low r
DS(on)
Termination is Lead-free and RoHS Compliant
advanced PowerTrench
®
process that has been especially
tailored to minimize the on-state resistance. This device is well
suited for Power Management and load switching applications
common in Notebook Computers and Portable Battery packs.
Applications
DC – DC Buck Converters
Notebook DC – DC application
Bottom
Top
G
S
S
S
D
D
D
D
5
6
7
8
4
3
Pin 1
G
S
S
S
2
1
D
D
D
D
MLP 3.3×3.3
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
30
±20
V
V
T
C
= 25 °C
T
A
= 25 °C
18
I
D
(Note 1a)
(Note 3)
12.5
45
A
-Pulsed
E
AS
Sinlge Pulse Avalanche Energy
Power Dissipation
21
mJ
W
T
C
= 25 °C
T
A
= 25 °C
27
P
D
Power Dissipation
(Note 1a)
2.3
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
4.7
53
°C/W
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMC7692S
FDMC7692S
MLP 3.3X3.3
3000 units
1
©2010
Semiconductor Components Industries, LLC.
October-2017,
Rev.
3
Publication Order Number:
FDMC7692S/D
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 1 mA, V
GS
= 0 V
D
= 10 mA, referenced to 25 °C
30
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
16
mV/°C
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
500
100
μ
A
nA
On Characteristics
(Note 2)
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 1 mA
1.2
2.0
-5
3.0
V
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 10 mA, referenced to 25 °C
mV/°C
V
GS
= 10 V, I
D
= 12.5 A
7.8
9.3
V
GS
= 4.5
V
,
I
D
= 10.4 A
10.8
13.6
r
DS(on)
Static Drain to Source On Resistance
Forward Transconductance
m
Ω
V
GS
= 10 V, I
D
= 12.5 A
T
J
= 125 °C
9.6
62
13.0
g
FS
V
DS
= 5 V, I
D
= 12.5 A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
1040
445
40
1385
590
60
pF
pF
pF
Ω
V
DS
= 15 V, V
GS
= 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.1
2.9
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
9
3
17
10
34
10
23
10
ns
ns
V
DD
= 15
V
,
I
D
= 12.5 A,
V
GS
= 10 V, R
GEN
= 6
Ω
Turn-Off Delay Time
Fall Time
19
3
ns
ns
Q
g
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
V
GS
= 0 V to 4.5 V
16
8
nC
nC
nC
nC
Q
g
V
DD
= 15 V
D
= 12.5 A
I
Q
gs
Q
gd
4
2
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 12.5 A
(Note 2)
(Note 2)
0.9
0.5
21
1.3
0.7
33
V
SD
Source to Drain Diode
Forward Voltage
V
V
GS
= 0 V, I
S
= 0.9 A
t
rr
Reverse Recovery Time
ns
I
F
= 12.5 A, di/dt = 300 A/
μ
s
Q
rr
Reverse Recovery Charge
16
29
nC
Notes
:
2
1. R
is determined with the device mounted on a 1in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined by
θ
CA
θ
JA
θ
JC
the user’s board design.
a. 53 °C/W when mounted
on a
b. 125 °C/W when mounted on
a
minimum pad of 2 oz copper.
2
1 in
pad of
2 oz
copper.
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3. E
of 21 mJ is based on starting T
= 25
°
C, L = 0.3 mH, I
= 12.0 A, V
= 27 V, V
= 10 V. 100% test at L = 3 mH, I
= 3.2 A .
AS
J
AS
DD
GS
AS
2
Typical Characteristics
T
J
= 25 °C unless otherwise noted
45
3.5
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10 V
36
V
GS
= 6 V
V
GS
= 3.5 V
V
GS
= 4.5 V
27
V
GS
= 4 V
V
GS
= 4 V
18
V
GS
= 4.5 V
V
GS
= 6 V
V
GS
= 3.5 V
9
PULSE DURATION = 80
μ
s
V
GS
= 10 V
DUTY CYCLE = 0.5% MAX
0
0
0.2
0.4
0.6
0.8
1.0
0
9
18
27
36
45
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
Figure 1.
On-Region Characteristics
1.6
40
I
D
= 12.5 A
GS
= 10 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 12.5 A
V
1.4
1.2
1.0
0.8
0.6
30
20
10
0
T
J
= 125
o
C
T
J
= 25
o
C
-75 -50 -25
0
25 50 75
100 125 150
2
4
6
8
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
F i gu re 3 .
N orma li zed
On – Res is ta nc e
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
45
100
PULSE DURATION = 80
μ
s
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
36
10
1
V
DS
= 5 V
T
J
= 125
o
C
27
T
J
= 125
o
C
T
J
= 25
o
C
18
9
0.1
T
J
= 25
o
C
T
J
= -55
o
C
0.01
0.001
T
J
= -55
o
C
0
1
2
3
4
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
3
Typical Characteristics
T
J
= 25 °C unless otherwise noted
10
3000
1000
I
DSS
= 12.5 A
V
DD
= 10 V
8
C
iss
V
DD
= 15 V
6
C
oss
V
DD
= 20 V
4
100
10
2
0
C
rss
f = 1 MHz
= 0 V
V
GS
0
3
6
9
12
15
18
30
0.1
1
10
Q ,
GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
20
100
10
10
T
J
= 25
o
C
100 us
1ms
T
J
= 100
o
C
1
THIS AREA IS
10 ms
LIMITED BY r
DS(on)
100 ms
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
1 s
T
J
= 125
o
C
0.1
10 s
DC
T
A
= 25
o
C
1
0.001
0.01
0.01
0.1
1
10
50
0.01
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Forward Bias Safe
Operating Area
1000
100
10
SINGLE PULSE
R
θ
JA
= 125
o
C/W
A
= 25
o
V
GS
= 10V
T
C
1
0.5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (sec)
10
0
10
1
100
1000
Figure 11.
Single Pulse
Maximum Power Dissipation
4
Typical Characteristics
T
J
= 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
0.01
t
2
SINGLE PULSE
NOTES:
(t) = r(t) x R
Z
θ
JA
θ
JA
0.001
R
= 125 °C/W
θ
JA
Peak T
= P
x Z
(t) + T
θ
JA
A
J
DM
Duty Cycle, D = t
/ t
1
2
0.0001
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 12.
Junction-to-Ambient Transient Thermal Response Curve
www,onsemi.com
5
Typical Characteristics
(continued)
SyncFET Schottky body diode
Characteristics
ON Semiconductor
’s SyncFET process embeds a Schottky
diode in parallel with
PowerTrench MOSFET. This diode
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
exhibits
similar
characteristics to
a
discrete external
Schottky diode in parallel with
a
MOSFET. Figure 13
characteristic of the
shows
the
reverse
recovery
FDMC7692S.
10
4
15
10
5
T
J
= 125
o
C
10
3
10
2
10
1
10
0
10
-1
didt = 300 A/
μ
s
T
J
= 100
o
C
0
T
J
= 25
o
C
-5
0
50
100
TIME (ns)
150
200
250
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
Figure 13. SyncFET body diode reverse
recovery characteristic
Figure 14. SyncFET body diode reverse
leakage versus
drain-source voltage
6
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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