onsemi-FDMC8200S
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FDMC8200S
Dual N-Channel PowerTrench
®
MOSFET
30 V, 10 m
Ω
, 20 m
Ω
General Description
This device includes two specialized N-Channel
MOSFETs in a
due power33(3mm X 3mm MLP) package. The switch node has
been internally connected to enable easy placement and routing
of synchronous buck converters. The control MOSFET (Q1) and
synchronous MOSFET (Q2) have been designed to provide
optimal power efficiency.
Features
Q1: N-Channel
Max r
DS(on)
= 20 m
Ω
at V
GS
= 10 V, I
D
= 6 A
Max r
DS(on)
= 32 m
Ω
at V
GS
= 4.5 V, I
D
= 5 A
Q2: N-Channel
Applications
Max r
DS(on)
= 10 m
Ω
at V
GS
= 10 V, I
D
= 8.5 A
Mobile Computing
Max r
DS(on)
= 13.5 m
Ω
at V
GS
= 4.5 V, I
D
= 7.2
Mobile Internet Devices
General Purpose Point of Load
RoHS Compliant
Bottom
Bottom
V
IN
D1
Q2
V
IN
D1
5
6
7
8
4
3
2
1
Pin 1
V
IN
G
HS
D1
G1
D1
V
IN
GND
GND
GND
G
LS
S2
S2
S2
G2
Q1
Power33
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
Parameter
Q1
30
Q2
30
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
(Note 4)
(Note 3)
±20
18
±20
13
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
T
C
= 25 °C
T
C
= 25 °C
T
A
= 25 °C
23
6
1a
46
8.5
1b
I
D
A
-Pulsed
40
27
E
AS
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
12
32
T
A
= 25°C
T
A
= 25°C
1.9
1a
0.7
1c
2.5
1b
1.0
1d
P
D
W
T
J
, T
STG
Operating and Storage Junction
T
e
mperature Range
-55 to +150
°C
Thermal Characteristics
R
θ
JA
R
θ
JA
R
θ
JC
Thermal Resistance, Junction to Ambient
65
1a
180
1c
7.5
50
1b
125
1d
4.2
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13”
Tape Width
Quantity
FDMC8200S
FDMC8200S
Power 33
12 mm
3000 units
©2011
Semiconductor Components Industries, LLC.
October-2017,
Rev.
3
Publication Order Number:
FDMC8200S/D
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max Units
Off Characteristics
I
D
= 250
μ
A, V
GS
= 0 V
I
D
= 1mA, V
GS
= 0 V
Q1
Q2
30
30
BV
DSS
Drain to Source Breakdown Voltage
V
Δ
BV
DSS
Δ
T
J
Breakdown Voltage
T
e
mperature
Coefficient
I
D
= 250
μ
A, referenced to 25°C
Q1
Q2
14
13
mV/°C
I
D
= 1mA, referenced to 25°C
Q1
Q2
1
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
DS
= 24 V,
V
GS
= 0 V
V
GS
= ±20 V, V
DS
= 0 V
μ
A
500
Q1
Q2
100
100
nA
nA
On Characteristics
V
GS
= V
DS
, I
D
= 250
μ
A
Q1
Q2
1.0
1.0
2.3
2.0
3.0
3.0
V
GS(th)
Gate to Source Threshold Voltage
V
V
GS
= V
DS
, I
D
= 1mA
Δ
V
GS(th)
Δ
T
J
Gate to Source Threshold Voltage
T
e
mperature Coefficient
I
D
= 250
μ
A, referenced to 25°C
I
D
= 1mA, referenced to 25°C
Q1
Q2
-5
-6
mV/°C
V
V
GS
= 10
V
,
I
D
= 6 A
GS
= 4.5
V
,
I
D
= 5 A
16
24
22
20
32
28
Q1
Q2
V
GS
= 10
V
,
I
D
= 6 A, T
J
= 125°C
r
DS(on)
Static Drain to Source On Resistance
m
Ω
V
GS
= 10
V
,
I
D
= 8.5 A
V
GS
= 4.5
V
,
I
D
= 7.2 A
V
GS
= 10
V
,
I
D
= 8.5 A, T
J
= 125°C
7.8
10.3
11.4
10.0
13.5
13.1
V
DD
= 5
V
,
I
D
= 6 A
Q1
Q2
29
43
g
FS
Forward Transconductance
S
V
DD
= 5
V
,
I
D
= 8.5 A
Dynamic Characteristics
Q1
Q2
495
1080 1436
660
C
iss
C
oss
C
rss
R
g
Input Capacitance
pF
pF
pF
Ω
Q1
Q2
145
373
195
495
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 15 V, V
GS
= 0
V
, f = 1
M
HZ
Q1
Q2
20
35
30
52
Q1
Q2
0.2
0.2
1.4
1.2
4.2
3.6
Switching Characteristics
Q1
Q2
11
7.6
20
15
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
ns
ns
Q1
V
DD
= 15
V
,
I
D
= 1 A,
Q1
Q2
3.1
1.8
10
10
V
GS
= 10
V
, R
GEN
= 6
Ω
Q1
Q2
35
21
56
34
Q2
Turn-Off Delay Time
Fall Time
ns
V
DD
= 15
V
,
I
D
= 1 A,
V
GS
= 10
V
, R
GEN
= 6
Ω
Q1
Q2
1.3
8.5
10
17
ns
Q1
Q2
7.3
15.7
10
22
Q
g(TOT)
Q
g(TOT)
Q
gs
T
o
tal Gate Charge
T
o
tal Gate Charge
Gate to Source
Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to 10 V
V
GS
= 0 V to 4.5 V
nC
nC
nC
nC
Q1
V
DD
= 15 V,
Q1
Q2
3.1
7.2
4.3
10
I
D
= 6 A
Q1
Q2
1.8
3
Q2
V
DD
= 15 V
I
D
= 8.5 A
Q1
Q2
1
1.9
Q
gd
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max Units
Drain-Source Diode Characteristics
V
GS
= 0 V, I
S
= 6 A
Source-Drain Diode
Forward Voltage
V
GS
= 0 V, I
S
= 8.5 A
GS
= 0 V, I
S
= 1.3 A
(Note 2)
(Note 2)
(Note 2)
Q1
Q2
Q2
0.8
0.8
0.6
1.2
1.2
0.8
V
SD
V
V
Q1
Q2
13
20
24
32
Q1
t
rr
Reverse Recovery Time
ns
I
F
= 6 A, di/dt = 100 A/s
Q2
I
F
= 8.5 A, di/dt = 300 A/s
Q1
Q2
2.3
15
10
24
Q
rr
Reverse Recovery Charge
nC
Notes:
2
1.
R
is determined with the device mounted on a 1in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R
is determined
θ
CA
θ
JA
θ
JC
by the
user’s board design.
a.65 °C/W when mounted on
a 1 in
pad of
2 oz
copper
b.50 °C/W when mounted on
2
2
a 1 in
pad of
2 oz
copper
c. 180 °C/W when mounted on
a
minimum pad of 2 oz copper
d. 125 °C/W when mounted on
a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300
μ
s, Duty cycle < 2.0%.
3.Starting Q1:
T = 25
°
C, L = 1 mH, I = 5 A, Vgs = 10V, Vdd = 27V, 100% test at L = 3 mH, I = 4 A; Q2: T = 25
°
C, L = 1 mH,
I = 8 A, Vgs = 10V, Vdd = 27V,
100% test at L = 3 mH, I = 3.2 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
3
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted
4
3
2
1
0
40
30
20
10
0
V
GS
= 10 V
V
GS
= 6 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
V
GS
= 3.5 V
V
GS
= 4 V
V
GS
= 4 V
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
= 6 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3.5 V
0
10
20
30
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
,
DRAIN CURRENT (A)
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
Figure 1.
On Region Characteristics
Figur
e
2
. N
o r m a l i z e d O n – R e s i s ta n c e
vs Drain Current and Gate Voltage
100
1.6
I
D
= 6 A
GS
= 10 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
80
60
40
20
0
1.4
1.2
1.0
0.8
I
D
= 6 A
T
J
= 125
o
C
T
J
= 25
o
C
-75 -50 -25
0
25 50 75
100 125 150
2
4
6
8
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figur
e
4
. On-Resistance
vs Gate to
Source Voltage
40
40
PULSE DURATION = 80
μ
s
V
GS
= 0 V
DUTY CYCLE = 0.5% MAX
10
30
20
10
0
V
DS
= 5 V
1
T
J
= 150
o
C
T
J
= 150
o
C
0.1
T
J
= 25
o
C
T
J
= 25
o
C
0.01
T
J
= -55
o
C
1.0
T
J
= -55
o
C
0.001
0.2
2.0
2.5
3.0
3.5
4.0
4.5
0.4
0.6
0.8
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5.
Transfer Characteristics
Figur
e
6
. Source
to Drain Diode
Forward Voltage vs Source Current
4
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted
10
8
1000
100
10
I
D
= 6 A
C
iss
V
DD
= 20 V
V
DD
= 15 V
C
oss
6
V
DD
= 10 V
4
C
rss
2
f = 1 MHz
= 0 V
V
GS
0
0
2
4
6
8
0.1
1
10
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 7.
Gate Charge Characteristics
Figur
e
8
. C
a p a c i t a n c e v s D r a i n
to Source Voltage
25
20
15
10
5
8
7
6
R
θ
JC
= 7.5
o
C/W
5
V
GS
= 10 V
4
T
J
= 25
o
C
3
Limited by Package
T
J
= 100
o
C
T
J
= 125
o
C
2
V
GS
= 4.5 V
1
0.01
0
25
0.1
1
7
50
75
100
125
150
t
AV
, TIME IN AVALANCHE (ms)
T
c
,
CASE TEMPERATURE
(
o
C
)
Figur
e
9
. U
n c l a m p e d I n d u c t i v e
Switching Capability
Figur
e
1
0. Maximum Continuous Drain
Current vs
Case Temperature
100
100
V
GS
= 10 V
10
100 us
10
1
1 ms
1
10 ms
THIS AREA IS
100 ms
LIMITED BY r
DS(on)
0.1
1 s
SINGLE PULSE
10 s
SINGLE PULSE
θ
JA
= 125
o
C/W
A
= 25
o
C
T
J
= MAX RATED
DC
R
θ
JA
= 180
C/W
R
0.01
o
T
T
C
= 25
o
C
0.1
0.001
0.001
0.01
0.1
1
10
100200
0.01
0.1
1
10
100
1000
t, PULSE WIDTH (sec)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe
Operating Area
Figur
e
1
2. Single Pulse
Maximum
Power Dissipation
5
Typical Characteristics (Q1 N-Channel)
T
J
= 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
SINGLE PULSE
θ
JA
= 180
o
C/W
0.01
R
0.003
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13.
Junction-to-Ambient Transient Thermal Response Curve
6
Typical Characteristics (Q2 N-Channel)
T
J
= 25 °C unless otherwise noted
27
18
9
4
3
2
1
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
= 4 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3 V
V
GS
= 3.5 V
V
GS
= 3.5 V
V
GS
= 3 V
V
GS
= 4 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10 V
V
GS
= 4.5 V
0
0.0
0.5
1.0
1.5
0
9
18
27
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
Figure 14.
On- Region Characteristics
Figure 15. Normalized on-Resistance vs Drain
Current and Gate
Voltage
1.6
100
I
D
= 8.5 A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 8.5 A
V
GS
= 10 V
80
60
40
20
0
1.4
1.2
1.0
0.8
T
J
= 125
o
C
T
J
= 25
o
C
-75 -50 -25
0
25 50 75
100 125 150
2
4
6
8
10
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
Figure 16. Normalized On-Resistance
vs Junction Temperature
27
30
V
GS
= 0 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
10
T
J
= 150
o
C
V
DS
= 5 V
1
18
9
T
J
= 150
o
C
T
J
= 25
o
C
0.1
T
J
= 25
o
C
T
J
= -55
o
C
0.01
0.001
T
J
= -55
o
C
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
7
Typical Characteristics (Q2 N-Channel)
T
J
= 25°C unless otherwise noted
3000
1000
10
8
I
D
= 8.5 A
C
iss
V
DD
= 15 V
6
C
oss
V
DD
= 10 V
V
DD
= 20 V
100
10
4
2
f = 1 MHz
= 0 V
C
rss
V
GS
0
0.1
1
10
30
0
2
4
6
8
10
12
14
16
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q ,
GATE CHARGE (nC)
g
Figure 21. Capacitance vs Drain
to Source Voltage
Figure 20. Gate Charge Characteristics
15
12
9
20
10
V
GS
= 10 V
T
J
= 25
o
C
T
J
= 100
o
C
V
GS
= 4.5 V
6
Limited by package
T
J
= 125
o
C
3
R
θ
JA
= 50
o
C/W
1
0.01
0
25
0.1
1
10
30
50
75
100
125
150
T
A
,
CASE TEMPERATURE
(
o
C
)
t
AV
, TIME IN AVALANCHE (ms)
Figure 22. Unclamped Inductive
Switching Capability
F ig ure 23 . Ma ximum
C on tin uo us
D rain
Current vs
Case Temperature
50
10
100
V
GS
= 10 V
100 us
10
1
1 ms
1
0.1
THIS AREA IS
LIMITED BY r
DS(on)
10 ms
100 ms
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
1 s
SINGLE PULSE
R
θ
JA
= 125
o
C/W
10 s
DC
A
= 25
o
C
T
A
= 25
o
C
T
0.01
0.1
0.001
0.01
0.1
1
10
100200
0.01
0.1
1
10
100
1000
t, PULSE WIDTH (sec)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe
Operating Area
Figure 25. Single Pulse
Maximum Power
Dissipation
8
Typical Characteristics (Q2 N-Channel)
T
J
= 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
P
DM
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t
/t
SINGLE PULSE
R
θ
JA
= 125
o
C/W
1
2
x R
PEAK T
= P
J
x Z
+ T
DM
θ
JC
θ
JC
C
(
Note 1b
)
0.001
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 26. Junction-to-Ambient Transient Thermal Response Curve
9
Typical Characteristics
(continued)
SyncFET Schottky body diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMC8200S.
7
6
5
4
0.01
T
J
= 125
o
C
0.001
0.0001
di/dt = 300 A/
μ
s
3
T
J
= 100
o
C
2
1
0.00001
0.000001
0
-1
-2
T
J
= 25
o
C
0
20
40
TIME (ns)
60
80
100
0
5
10
15
20
25
30
V
DS
, REVERSE VOLTAGE (V)
Figure 27. FDMC8200S SyncFET body
diode reverse recovery characteristic
Figure 28. SyncFET body diode reverses
leakage versus
drain-source voltage
10
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