onsemi-FDMC86139P
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DATA SHEET
MOSFET
– P-Channel,
POWERTRENCH
)
-100
V
,
–
15 A, 67 m
W
Pin 1
S
S
S
G
D
D
FDMC86139P
D
D
Bottom
Top
General Description
This P
−
Channel MOSFET is produced using
onsemi’
s advanced
POWERTRENCH technology. This very high density process is
especially tailored to minimize on
−
state resistance and optimized for
superior switching performance.
WDFN8 3.3×3.3, 0.65P
CASE 511DH
MARKING DIAGRAM
Features
•
Max r
•
Max r
= 67 m
W
at V
=
−
10
V
, I
=
−
4.4 A
GS D
DS(on)
DS(on)
FDMC
86139P
&Z&K&2
= 89 m
W
at V
=
−
6
V
, I
=
−
3.6 A
GS
D
•
V
e
ry Low RDS
−
On Mid
V
o
ltage P Channel Silicon Technology
Optimised for Low Qg
•
This Product is Optimised for Fast Switching Applications as well as
Load Switch Applications
•
100% UIL Tested
•
These Devices are Pb
−
Free and are RoHS Compliant
FDMC
86139P
&Z
&K
&2
= Specific Device Code
= Specific Device Code
= Assembly Location
= Lot Run Traceability Code
= Date Code (
Y
e
ar and Week)
Applications
•
Active Clamp Switch
•
Load Switch
PIN ASSIGNMENT
S
S
1
2
8
7
D
D
S
3
4
6
5
D
D
G
P
−
Channel MOSFET
ORDERING INFORMATION
this data sheet.
©
Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
January, 2022
−
Rev. 3
FDMC86139P/D
FDMC86139P
MOSFET MAXIMUM RATINGS
(T =
25
°
C unless otherwise noted)
A
Symbol
Parameter
Rating
100
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
25
V
I
D
Continuous
T
C
= 25
°
C
−
15
A
Pulsed
T =
25
°
C
A
−
4.4
−
30
E
Power Dissipation
121
mJ
W
AS
P
T
C
= 25
°
C
40
D
T =
25
°
C
A
2.3
T , T
Operating and Storage Junction
T
e
mperature Range
−
55 to + 150
°
C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
R
q
JC
Parameter
Rating
3.1
Unit
Thermal Resistance, Junction to Case
°
C/W
R
q
JA
53
2
1. R
is determined with the device mounted on a 1 in
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR
−
4 material. R
is guaranteed
q
q
JC
JA
by design while R
is determined by the user’s board design.
q
CA
a. 53
°
C/W when mounted on
b. 125
°
C/W when mounted on
a minimum pad of 2 oz copper
2
a 1 in
pad of 2 oz copper
2. Pulse
T
e
st: Pulse Width < 300
m
s, Duty cycle < 2.0%.
3. Starting
T =
25
°
C; P
−
ch: L = 3 mH, I
=
−
9 A, V
=
−
100
V
, V
=
−
10
V
.
1
00% test al L = 0.1 mH, I
=
−
28 A
J
AS
DD
GS
AS
2
FDMC86139P
ELECTRICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Volt-
age
I
I
=
−
250
m
A, V
= 0 V
−
100
−
−
−
V
DSS
D
GS
Breakdown Voltage
T
e
mperature
Coefficient
=
−
250
m
A, referenced to 25
°
C
−
−
63
mV/
°
C
D
BV
DSS
D
T
J
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
=
−
80
V
, V
= 0 V
−
−
−
−
−
1
m
A
DSS
GSS
DS
GS
I
=
25
V
, V
= 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V
, I
=
−
250
m
A
−
2
−
3
−
4
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
T
e
mperature Coefficient
=
−
250
m
A, referenced to 25
°
C
−
7
−
mV/
°
C
D
V
GS(th)
D
T
J
D
r
Static Drain to Source
On Resistance
V
GS
V
GS
V
GS
V
DS
=
−
10
V
, I
=
−
4.4 A
−
−
−
−
56
69
87
12
67
89
104
−
m
W
DS(on)
D
=
−
6
V
, I
=
−
3.6 A
D
=
−
10
V
, I
=
−
4.4 A, T
= 125
°
C
D
J
g
FS
Forward Transconductance
=
−
10
V
, I
=
−
4.4 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
=
−
50
V
, V
= 0 V, f = 1
M
Hz
−
−
1001
178
10
1335
240
15
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
−
rss
R
0.1
1.6
3.2
g
SWITCHING CHARACTERISTICS
t
Turn
−
On Delay Time
Rise Time
V
=
−
50
V
, I
=
−
4.4 A, V
=
−
10
V
,
GEN
−
−
−
−
−
−
−
−
11
2.5
17
4
20
10
30
10
22
14
−
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6
W
t
r
t
Turn
−
Off Delay Time
Fall Time
d(off)
t
f
Q
T
o
tal Gate Charge
V
DD
V
DD
V
DD
=
−
50
V
, I
=
−
4.4 A, V
= 0 V to
−
10 V
16
9.8
4.5
3.2
g(TOT)
D
GS
=
−
50
V
, I
=
−
4.4 A, V
= 0 V to
−
6 V
D
GS
Q
Q
T
o
tal Gate Charge
=
−
50
V
, I
=
−
4.4 A
nC
nC
gs
D
Gate to Drain “Miller” Charge
−
gd
DRAIN
−
SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
V
−
−
−
−
−
0.84
−
0.79
70
−
1.3
−
1.2
112
V
SD
GS
S
GS
S
t
Reverse Recovery Time
I =
−
4.4 A, di/dt = 100 A/
m
s
F
ns
rr
Q
Reverse Recovery Charge
141
225
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3
FDMC86139P
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted)
J
30
20
10
0
5
V
=
−
10 V
GS
V
=
−
4.5 V
GS
V
=
−
6 V
GS
V
=
−
5 V
GS
4
3
V
GS
=
−
5.5 V
V
=
−
5.5 V
GS
V
=
−
5 V
GS
V
=
−
6 V
2
1
0
GS
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
GS
=
−
10 V
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
=
−
4.5 V
GS
0
10
20
30
0
1
2
3
4
5
−
V ,
DRAIN TO SOURCE VOLTAGE (V)
DS
−
I ,
DRAIN CURRENT (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On
−
Resistance vs.
Drain Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
250
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
I
V
=
−
4.4 A
=
−
10 V
D
200
GS
I
D
=
−
4.4 A
150
100
50
T =
125
°
C
J
T =
25
°
C
J
0
−
75
−
50
−
25
0
25 50 75 100
125 150
6
4
5
7
8
9
10
T , JUNCTION TEMPERATURE (
°
C)
J
−
V ,
GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On
−
Resistance vs. Gate to Source
Voltage
50
30
PULSE DURATION = 80
m
s
DUTY CYCLE = 0.5% MAX
V
= 0 V
GS
10
1
V
DS
=
−
5 V
T =
150
°
C
J
20
10
0
T =
25
°
C
J
0.1
T =
150
°
C
J
T =
25
°
C
J
T =
−
55
°
C
J
0.01
T =
−
55
°
C
J
0.001
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
−
V ,
GATE TO SOURCE VOLTAGE (V)
GS
−
V ,
BODY DIODE FORWARD VO
L
TAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
4
FDMC86139P
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (continued)
J
10
8
2000
1000
I
D
=
−
4.4 A
V
DD
=
−
50 V
C
ISS
V
DD
=
−
25 V
C
100
10
1
OSS
RSS
6
V
DD
=
−
75 V
4
C
2
f = 1 MHz
= 0 V
V
GS
0
0
4
8
12
16
0.1
1
10
100
Q ,
GATE CHARGE (nC)
g
−
V ,
DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
50
20
15
10
5
T =
25
°
C
J
V
GS
=
−
10 V
T =
100
°
C
J
10
LIMITED BY PACKAGE
V
GS
=
−
6 V
T =
125
°
C
J
R
= 3.1
°
C/W
q
JC
1
0.001
0
25
50
75
100
125
150
0.01
0.1
1
10
50
t ,
TIME IN AVALANCHE (ms)
AV
T ,
CASE TEMPERATURE (
°
C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
40
2000
1000
100
m
s
10
100
10
1 ms
1
10 ms
THIS AREA IS
LIMITED BY r
SINGLE PULSE
100 ms
DS(on)
0.1
SINGLE PULSE
R =
125
°
C/W
q
JA
T =
25
°
C
A
1 s
10 s
DC
T
J
= MAX RATED
R
T
= 125
°
C/W
= 25
°
C
q
CURVE BENT TO
MEASURED DATA
JA
0.01
0.005
1
0.5
A
−
4
−
3
−
2
−
1
0.1
1
10
100
400
10
10
10
10
1
10
100 1000
−
V ,
DRAIN TO SOURCE VOLTAGE (V)
DS
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
5
FDMC86139P
TYPICAL CHARACTERISTICS
(T =
25
°
C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE
−
DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
t
1
t
2
0.01
Z
q
(t) = r(t)
×
R
q
JA
JA
R
= 125
°
C/W
q
JA
SINGLE PULSE
1
0
−
3
Peak T
= P
Duty Cycle, D = t
/ t
×
Z (t)
+ T
q
JA A
J
DM
0.001
1
2
0.0005
1
0
−
4
10
1
0
−
1
10
0
10
1
10
2
10
3
−
2
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction
−
to
−
Ambient Transient Thermal Response Curve
ORDERING INFORMATION
†
Device
Device Marking
FDMC86139P
Package Type
Reel Size
Tape Width
Shipping
FDMC86139P
WDFN8 3.3×3.3, 0.65P
Power 33
13”
12 mm
3000 /
T
a
pe & Reel
(Pb
−
Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our
T
a
pe and Reel Packaging
Specifications Brochure, BRD8011/D.
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3×3.3, 0.65P
CASE 511DH
ISSUE O
DATE 31 JUL 2016
(3.40)
2.37
0.05 C
B
3.30
A
8
5
2X
0.45(4X)
(0.40)
2.15
3.30
(1.70)
KEEP OUT
AREA
(0.65)
0.70(4X)
0.05 C
PIN#1 IDENT
1
4
TOP VIEW
0.65
0.42(8X)
2X
1.95
RECOMMENDED LAND PATTERN
0.75 0.05
0.10 C
0.15 0.05
0.08 C
0.025 0.025
NOTES:
C
SIDE VIEW
SEATING
PLANE
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO
−
229
B. DIMENSIONS
ARE IN MILLIMETERS.
3.30 0.05
2.27 0.05
C. DIMENSIONS
AND TOLERANCES PER
ASME Y14.5M, 2009.
(0.50)4X
(0.35)
PIN #1 IDENT
0.50 0.05
(4X)
(0.79)
D. LAND
PATTERN RECOMMENDATION IS
EXISTING INDUSTRY LAND PATTERN.
1
4
(1.15)
3.30 0.05
2.00 0.05
R0.15
0.30 0.05
(3X)
8
5
0.35 0.05
(8X)
0.65
0.10
0.05
C A B
C
1.95
BOTTOM VIEW
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions
are uncontrolled
except when stamped
“CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13625G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
©
Semiconductor Components Industries, LLC, 2019
onsemi
,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates
and/or subsidiaries in the United States and/or other countries.
onsemi
owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of
onsemi
’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent
−
Marking.pdf
.
onsemi
reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as
−
is” and
onsemi
makes no warranty, representation or guarantee regarding the accuracy of the
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onsemi
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and applications using
onsemi
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provided by
onsemi
. “Typical” parameters which may be provided in
onsemi
data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.
onsemi
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under any of its intellectual property rights nor the rights of others.
onsemi
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onsemi
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onsemi
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onsemi
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T
:
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−
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o
ll Free USA/Canada
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